282 results about "Current–voltage characteristic" patented technology

The invention relates to a conditioning circuit that measures operating points of a power supply to deduce therefrom the current-voltage characteristic thereof and to determine directly the voltage corresponding to its maximum power point, without using any kind of tracking algorithm that causes the operating point of the power unit to oscillate about the maximum power point. The maximum power point voltage VMPP is supplied to a controller which regulates a power cell by slaving it to the input voltage until the output voltage of the supply is equal to the maximum power point voltage VMPP. The invention also relates to a solar generator and an associated conditioning method. One particular application is to high-power satellites.

The invention relates to a method and a circuit arrangement for the ageing compensation of an organic light-emitting diode (OLED) which is fed from a supply voltage and is switched by means of a driver transistor operated in saturation operation, by means of a driving of the light-emitting diode. The method comprises the following steps of: storing at least one desired current-voltage value pair of a desired current-voltage characteristic curve of the light-emitting diode; transferring the driver transistor from saturation operation to linear operation during a measurement cycle; measuring a current value for the current through the light-emitting diode by means of a current measuring circuit in the measurement cycle; determining at least one present current-voltage value pair of a present current-voltage characteristic curve of the light-emitting diode by means of the measured current value; comparing the at least one present current-voltage value pair of the light-emitting diode with the desired current-voltage value pair of the light-emitting diode; and generating driving parameters for driving the light-emitting diode in a manner dependent on the result of the comparison.

A detection voltage, which is obtained by dividing the voltage of a fuel cell 1 by resistors, is compared with a first reference voltage Vref 1 by a differential amplifier. The differential voltage is input to a control section. The control section performs PWM control for the circuit section according to the difference. The first reference voltage Vref 1 is set according to the dividing ratio of the resistors, based on the output voltage when the fuel cell generates power at the maximum power point. To determine the output voltage for maximum power generation, a characteristic curve representing a current-voltage characteristic is approximated by an approximating line within a range excluding an area in which the output voltage changes abruptly when the output current is nearly zero, and an extrapolated voltage is obtained on the extension line of the approximating line at an output current of zero. Fifty percent of the extrapolated voltage is then determined as the output voltage when the fuel cell generates power at the maximum power point. Thus, a fuel cell control system that identifies a highly precise output voltage for power generation at a maximum power point and controls power so that the maximum power point is not exceeded could be provided.

A pixel circuit, display device, and method of driving a pixel circuit enabling source-follower output with no deterioration of luminance even with a change of the current-voltage characteristic of the light emitting element along with elapse, enabling a source-follower circuit of n-channel transistors, and able to use an n-channel transistor as a drive transistor of a light emitting element while using current anode-cathode electrodes, wherein a capacitor C111 is connected between a gate and source of a TFT 111 as a drive transistor, a source side of the TFT 111 is connected to a fixed potential (for example GND) through the TFT 114, the gate and drain of the TFT 111 are connected through the TFT 113 to cancel the threshold value Vth, the threshold value Vth is charged in the capacitor C111, and the input voltage Vin is coupled with the gate of the TFT 111 from the threshold voltage Vth.

The present invention relates to organic semiconductor diodes, in particular, to the diodes with nonlinear current-voltage characteristics, which are used for power switching, rectifying variable signals, and frequency mixing. The organic semiconductor diode with the p-n junction comprises an anode, cathode, a hole transport layer in contact with the anode, and an electron transport layer in contact with the cathode, and two transport layers being in contact with each other. Another aspect of the present invention is a Schottky barrier diode comprising anode, cathode, and an organic semiconductor layer, wherein the semiconductor layer is either hole or electron transport layer. At least one of the transport layers is characterized by a globally ordered crystalline structure with intermolecular spacing of 3.4±0.3 Å in the direction of one crystal axis. One more aspect of the present invention is a method for obtaining an organic semiconductor layer with the electron-hole type of conductivity.

A semiconductor device of the invention has a plurality of P-channel transistors, to which resistance elements are inserted in series, prepared on a pull-up side of a driver such that an ON resistance value on the P-channel transistor side and a resistance value of the resistance element can be selected. In addition, also on a pull-down side of the driver, a plurality of N-channel transistors to which resistance elements are inserted in series are prepared such that an ON resistance value on the N-channel transistor side and a resistance value of the resistance element can be selected. A driver section having a linear current-voltage characteristic is realized by combination of those described.

The light-emitting element has a problem that reliability, heat-resisting stability and durability are low because of the deterioration in an organic compound layer. The TFT for driving the light-emitting element has a problem that variation readily occurs in its electrical characteristic due to the defects existing in grain boundaries. The present invention provides a light-emitting device by using the fact that, by applying to the light-emitting element a drive voltage having a polarity reverse to that in light emission during each constant period, the light-emitting element is improved in current-voltage characteristic. Furthermore, the present invention provides a light-emitting device made not dependent upon transistor characteristic, by controlling the amount of a current flowing through the light-emitting element.

A thin-film semiconductor device comprises a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.