The invention belongs to the field of growth of
silicon carbide single crystals, and particularly relates to a method for optimizing growth of the
silicon carbide single crystals. The method includes the following steps: (1), drilling a gas hole in the upper portion of the side wall of a
graphite crucible; (2), putting an SiC
raw material at the bottom of the
graphite crucible, and putting SiC seed crystals on a
graphite tray connected with an upper cover of the
graphite crucible; (3), connecting one end of a graphite guide
pipe into the gas hole in the side wall of the
graphite crucible, and connecting the other end of the graphite guide
pipe to a
silane pipe of an
induction heating furnace; (4), performing vacuuming, keeping a
vacuum state, injecting an exchange gas into a growth chamber, re-injecting the same flow of exchange gas for the same duration after 10-40 minutes, and cyclically repeating the process; (5), heating the growth chamber; (6), injecting
silane gas into the growth chamber; (7), after growth of
silicon carbide crystals, gradually decreasing the temperature of the growth chamber to
room temperature. The method has the advantages that graphitization of the SiC
raw material is inhibited, sublimate components are stably conveyed to a growth area, the growth process is optimized, and the defects in the crystals are reduced.