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Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices

A composition and water polishing technology, applied in the direction of chemical instruments and methods, polishing compositions containing abrasives, polishing compositions, etc., can solve problems such as oxide-nitride selectivity that are not mentioned, and achieve improved process management , to improve the effect of selectivity

Inactive Publication Date: 2013-07-03
BASF SE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oxide-nitride selectivity is not mentioned

Method used

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  • Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
  • Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
  • Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices

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Experimental program
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preparation example Construction

[0138] The preparation of the composition of the present invention does not show any particularity, but can be achieved by dissolving or dispersing the above-mentioned components (A), (B) and (C) and optionally (D) and / or (E) in an aqueous medium, especially performed in deionized water. For this purpose, customary and standard mixing methods and mixing devices can be used, such as stirred vessels, in-line dissolvers, high-shear impellers, ultrasonic mixers, homogenizer nozzles or countercurrent mixers. The composition according to the invention thus obtained may preferably be filtered through a filter having suitable mesh openings in order to remove coarse particles, such as solid aggregates or agglomerates of finely divided abrasive particles (A).

[0139] The compositions of the invention are extremely suitable for the method of the invention.

[0140] In the method of the invention, substrate materials for electronic, mechanical and optical devices, especially electronic ...

example 20-22

[0166] - Substrates: 2000nm thermal silica coated blank wafers from SKW and 500nm silicon nitride coated blank wafers from Montco Silicon; Examples 20-22: TEOS silica coated blank wafers;

[0167] - Downward force: 3.5 psi (240 mbar);

[0168] - Polishing time: 1 minute.

[0169] The material removal rate MRR was measured with a reflectometer. The results obtained are compiled in Table 2.

[0170]Table 2: CMP and Oxide-Nitride Selectivity of SiO2-Coated Blank Wafers and SiN-Coated Blank Wafers

[0171]

[0172] a) Angstroms / minute

[0173] The results, compiled in Table 2, show that high oxide-nitride selectivities can be obtained in the sole presence of hydroxycarboxylic acids and hydroxyl-containing lactones. However, the comparative aqueous polishing compositions containing only these additives required much improvement in terms of pitting and overpolishing of the trench oxide in the STI process and dispersion stability (pot life).

[0174] Examples 1-4 and Comparat...

Embodiment 5

[0201] Stabilization of ceria-based aqueous polishing compositions with cationically modified flocculants

[0202] Cationic modified flocculant (Sedipur TM CL520, ex BASF SE) was added in various amounts to an aqueous polishing composition having a pH of 3 and containing 0.5% by weight ceria and 0.025% by weight glucuronic acid. Average particle size was measured with a Horiba Instrument particle size analyzer. The results obtained are compiled in Table 5.

[0203] Table 5: With Sedipur TM Stabilization of ceria-based aqueous polishing compositions for CL520

[0204] Sedipur TM Concentration of CL520 / ppm

[0205] Table 5 shows that the addition of even as low as 10 ppm is sufficient to control the aggregation of ceria particles, thereby enhancing the stability of the aqueous polishing composition and its shelf life.

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Abstract

An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1 ) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1 ) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1 ) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculants having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.

Description

[0001] The present invention relates to a novel aqueous polishing composition particularly suitable for polishing substrate materials for electronic, mechanical and optical devices. [0002] Furthermore, the present invention relates to new methods of polishing substrate materials used in the manufacture of electronic, mechanical and optical devices. [0003] Last but not least, the present invention relates to novel uses of said novel aqueous polishing compositions in the manufacture of electronic, mechanical and optical devices. [0004] Citation [0005] The documents cited in the present application are fully incorporated by reference. Background of the invention [0006] Chemical mechanical planarization or polishing (CMP) is the primary method for achieving local and global flatness of integrated circuit (IC) devices. This technique typically applies a CMP composition or slurry containing abrasives and other additives as the active chemical under a load between a rotat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/04C09G1/18C09K3/14
CPCC09G1/02C09K3/1409C09K3/1463H01L21/31053C09K3/14C09G1/04C09G1/18
Inventor Y·李J-J·楚S·S·文卡塔拉曼S·A·奥斯曼易卜拉欣H·W·平德尔
Owner BASF SE
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