41results about How to "Reduce overshoot voltage" patented technology

A switching regulator converts an input voltage to a predetermined voltage and outputs the predetermined voltage to a load through an output terminal. The switching regulator includes a first switching element, a second switching element, a control switching circuit part, and a smoothing circuit. When a first operating mode in which a PFM control is performed and a voltage from the output terminal becomes a first voltage is shifted to a second operating mode in which a PWM control is performed and the voltage from the output terminal becomes a second voltage larger than the first voltage, the control switching circuit part increases the voltage from the output terminal stepwise progressively from the first voltage to the second voltage while performing the PWM control.

The invention relates to a groove-type anode fast recovery diode with bipolar Schottky control and a manufacturing method thereof. The diode includes a cathode metal, Above the cathode metal there isan N-type intrinsic region, Above the N-type intrinsic region there is an anode metal, the cathode metal is provided with a lightly doped N-type region and a heavily doped N-type region spaced apart from each other, the bottom of the lightly doped N-type region is in Schottky contact with the cathode metal, A heavily doped P-type region and a lightly doped P-type region are arranged between the N-type intrinsic region and the anode metal, and the upper surface of the heavily doped P-type region is lower than the upper surface of the lightly doped P-type region, so that a groove-type anode region is formed, and the lightly doped P-type region is in Schottky contact with the anode metal. The manufacturing method of the groove-type anode fast recovery diode with bipolar Schottky control is characterized in that Schottky contacts of an anode surface and a sidewall can be simultaneously formed by one-step etching.

The invention discloses a power supply rejection ratio and trainset response-enhanced LDO circuit. The LDO circuit comprises an LDO basic circuit, a PSR intensifier, and a transient intensifier; and each of the PSR intensifier and the transient intensifier is connected with the LDO basic circuit. A gate end of a power tube in the LDO basic circuit is connected with a capacitance-adjustable negative capacitor by utilizing the PSR intensifier, the negative capacitor can reduce a gate source dynamic voltage of the power tube as zero, thereby effectively reducing the leakage current of a small power tube, inhibiting the noise of an external input power supply, and improving noise inhibition performance of the LDO circuit, and the LDO circuit has the advantages of being simple in structure andhigh in power supply rejection ratio, and the LDO circuit has the advantages of being simple in structure and high in power supply rejection ratio; and meanwhile, a first detection capacitor and a second detection capacitor in a voltage detection circuit are used for detecting voltage change of an output end of the LDO circuit in real time; the charging / discharging current is provided for the gateend of the power tube through an embedded transient intensifier, the transient response speed of the LDO circuit is effectively improved, and the overshoot voltage and the pitching voltage output bythe LDO circuit are reduced.

An apparatus to recover a reactive power of a plasma display panel, the apparatus including a power supply source, first and second discharge electrodes to perform a surface discharge with a voltage from the power supply source, a panel capacitor having opposite ends connected to the respective discharge electrodes and which is discharged by supplying a charge voltage to one of the first and second discharge electrodes, an inductor provided between the one of the first and second discharge electrodes and the panel capacitor. The inductor is charged by a discharge current of the panel capacitor and induces the charge voltage of the panel capacitor to be recovered.

The invention discloses a display device, a source electrode drive circuit, and a control circuit for the source electrode drive circuit. The source electrode drive circuit comprises a digital-analog conversion module which is used for converting a digital signal into an analog voltage; an amplification module which is used for amplifying the analog voltage under the control of a switching signal; and an output module which is connected between the amplification module and an output end, and is used for providing a source electrode drive signal for a pixel unit. The output module comprises a plurality of parallel control units, and the control units are sequentially connected according to a sequence from the big conduction resistance to the small conduction resistance. Compared with the prior art, the source electrode drive circuit can effectively reduce the overshoot effect of the circuit, and reduce the noise of the circuit.

An apparatus to recover a reactive power of a plasma display panel, the apparatus including a power supply source, first and second discharge electrodes to perform a surface discharge with a voltage from the power supply source, a panel capacitor having opposite ends connected to the respective discharge electrodes and which is discharged by supplying a charge voltage to one of the first and second discharge electrodes, an inductor provided between the one of the first and second discharge electrodes and the panel capacitor. The inductor is charged by a discharge current of the panel capacitor and induces the charge voltage of the panel capacitor to be recovered.

A method pixel driving method of an organic light emitting diode (OLED) display and an apparatus thereof are provided. The method comprises the following steps. First, a pixel unit is reset to a predetermined voltage in a reset time period. After that, a frame period is divided into two driving time periods so that the pixel unit is finally charged to a pixel voltage. The charging process of the pixel unit is that the pixel unit is charged to a ground level in a first driving time period, and then the pixel unit is charged to the pixel voltage in a second driving time period.

The invention discloses a method for improving dynamic performance of a synchronous rectification primary side feedback flyback power supply. Specific to deficiencies of an existing dynamic control algorithm under the low-power DCM condition, especially the defect that dynamic recovery time is too long when a heavy load is switched into a light load, turn-off of a switching tube at a primary sideof a converter as well as a synchronous rectifier tube at a secondary side are controlled to fix a duty cycle switch, and energy of a load capacitor at an output terminal is extracted to the primary side, so that an output voltage drops rapidly; meanwhile, the output voltage is always sampled at a fixed frequency, when the output voltage drops to a rated value, a corresponding steady-state mode ofa system at the moment after the system jumps out of a high dynamic mode is judged according to the size of a load, and then the system enters the steady-state mode. The method disclosed by the invention can shorten the output voltage to be within 2.5ms, and output voltage ripple is small when the system leaves the dynamic mode and enters the steady-state mode, so that dynamic performance of a flyback converter at high power is obviously improved.

The invention discloses a soft starting circuit applied in a buck type direct current (DC)-DC switch power supply. The soft starting circuit mainly resolves the problem that overshoot voltage and surge current exist in the existing starting circuit, and static power consumption is too large. The starting circuit comprises a frequency converter circuit, a control circuit and a current-voltage conversion circuit. The first output end of the frequency converter circuit is connected with the control circuit to output a soft starting ending signal OVER, and the second output end of the frequency converter circuit si connected with a current-voltage conversion circuit to output digital signals F1-F7. The first output end of the control circuit is connected with the frequency converter circuit to output a clearing signal clr, the second output end and the third output end of the control circuit are connected with the current-voltage conversion circuit to respectively output a digital signal F8 and a digital signal XF8, and the current-voltage conversion circuit outputs voltage signals VSS. The soft starting circuit adopts the current-voltage conversion circuit, improves output voltage stability, reduces static power consumption, shortens domain area, reduces cost and can be used for simulating an integrated circuit.

The invention discloses a power semiconductor module packaging structure, which is characterized by comprising a substrate, a shell, a power semiconductor module subunit and an auxiliary terminal, wherein the shell is connected with the substrate in a fastened mode; the power semiconductor module subunit is arranged in accommodating space formed by the shell and the substrate and is used for forming a topology control circuit structure, the power semiconductor module subunit comprises a plurality of lining plates arranged on the substrate at intervals, the two oppositely arranged lining platesare connected through a main power terminal and a module-level bonding wire, and the top of the main power terminal extends out of the top of the shell; and the auxiliary terminal is used for introducing a driving signal into the power semiconductor module subunit, a bottom pin of the auxiliary terminal is connected with the lining plate, and the top of the auxiliary terminal extends out of the top of the shell. Thus, the heat dissipation efficiency of the power semiconductor module can be improved, parasitic inductance or resistance parameters are balanced, the process consistency is improved, the loss is low, and the reliability is good.

The invention provides an efficient field effect tube driving circuit which is used for driving a switch power field effect tube. The field effect tube driving circuit comprises a work power supply, a driving signal generating circuit, a delay driving circuit and a delay circuit, wherein the driving signal generating circuit, the delay driving circuit and the delay circuit are connected with one another in sequence and further connected to the switch power field effect tube; the driving circuit comprises a slow disconnecting circuit and a rapid disconnecting circuit; the delay driving circuit comprises a first phase inverter, a second phase inverter and a voltage comparator; the first phase inverter provides driving signals to the slow disconnecting circuit, and the second phase inverter provides driving circuit signals to the rapid disconnecting circuit; the voltage comparator is positioned in front of the second phase inverter, and when driving signals of the inverted input end of the voltage comparator rises to be higher than one reference voltage, the rapid disconnecting switch is disconnected, and only is the slow disconnecting circuit connected; and until the first phase inverter and the second phase inverter are connected, the slow disconnecting circuit is disconnected.

The invention discloses an asymmetric voltage stabilizing circuit used for NAND FLASH. The asymmetric voltage stabilizing circuit comprises a bias module, an error magnification module and an output module. An output end of the bias module is connected with an input end of the error magnification module such that external input voltage is converted into first bias voltage, second bias voltage, third bias voltage and fourth bias voltage and inputting the above into the error magnification module. An output end of the error magnification module is connected with an input end of the output module, which is used for amplifying differential signals based on the first bias voltage, the second bias voltage, the third bias voltage and the fourth bias voltage. A folding-type amplifier structure is adopted by the error magnification module, a differential output stage of which adopts an asymmetric structure. The times of differential output is at least two. The output module is used for receiving differential amplification signals inputted by the error amplification module and outputting the differential amplification. The asymmetric voltage stabilizing circuit used for NAND FLASH has following beneficial effects: an asymmetric folding-type cascade structure is adopted by the error magnification module such that less overshoot voltage is generated on the same power consumption.

The invention discloses a linear voltage regulator circuit without overshoot voltage at the output end. The positive input end of an operational amplifier OP3 is connected with a reference voltage VREF1, and the output end of the operational amplifier OP3 is connected with the G end of a transistor PMOS5; the S end of the transistor PMOS5 is connected with a power supply voltage VDD; the D end of the transistor PMOS5 is connected with a resistor R6; after the resistor R6 is connected with a resistor R7, the R7 is grounded; the negative input end of the operational amplifier OP3 is connected to a connecting line of the resistor R6 and the resistor R7; the D end of the transistor PMOS5 is connected with the positive input end of a comparator OP4; a reference voltage VREF2 is input into the negative input end of the comparator OP4, and the output end of the comparator OP4 is connected with the G end of a transistor NSMOS8; the D end of the transistor NSMOS8 and the D end of the transistor PMOS5 are connected to an output voltage Vout; and the S end of the transistor NMOS 8 is grounded. According to the invention, the comparator OP4 and a discharge MOS tube NMOS 8 are added on the basis of a typical linear voltage regulator, so that the overshoot voltage of the output end of the circuit of the linear voltage regulator can be effectively reduced on the premise of not changing the transient characteristics of the linear voltage regulator.

The invention relates to a device and a method for processing peak voltage of a winch frequency conversion speed adjusting device. The device comprises diodes D1-D12, resistive elements R1-R13, capacitors C1-C2 and voltage-stabilizer tubes Z1-Z10. By reducing a change rate dv / dt of output voltage of a frequency converter, overshoot voltage at a motor end caused by an overlong driving cable is reduced, insulation of a motor is protected, bearing current is reduced, service life of the cable and the motor is prolonged, temperature of the motor is reduced, noise of the motor is reduced, electromagnetic interference is reduced, and system reliability is improved.

The invention discloses a method for reducing overshooting voltage in an active filter, which is characterized in that a horn mouth charging mode is used in the secondary charging process of a storage capacitor in an active filter from the operating voltage (540v) of the active filter to 800v, wherein the horn mouth charging mode comprises the following steps: after receiving a starting signal, a DSP (digital signal processor) implements a 20s soft-startup horn mouth strategy on the sent command current, i.e. after the actual command current is calculated, the current is multiplied by a coefficient which is more than zero and less than 1 and is then sent to a current tracking control circuit, wherein the coefficient gradually increases from zero to one within 20 seconds, so that the command current is also gradually increased. By using the horn mouth charging mode, the method disclosed in the invention greatly reduces the overshooting voltage in the active filter, thereby ensuring the normal operation of the active filter.

The invention relates to an insulated gate bipolar translator (IGBT) with an improved collector structure. The IGBT comprises a semiconductor substrate, wherein the second main surface of the semiconductor substrate is provided with a second conductive type collecting region and a metalized collector; a second conductive type base region is arranged in the semiconductor substrate; the upper part of the second conductive type base region is provided with a first conductive type emitting region; the first main surface of the semiconductor is provided with an insulated gate, an insulated dielectric layer and a metalized emitter; the second conductive type collecting region comprises one or more first regions with a first doping density and one or more second regions with a second doping density; the first regions surround the plurality of the second regions or the first regions and the second regions are arranged alternately and adjacently; the first doping density of the first regions is less than the second doping density of the second regions; and the first doping density of the first regions is greater than the doping density of the first conductive type conductive substrate. TheIGBT has the characteristics of low on-state voltage, lower turn-off loss and higher impact resistance performance.

A discharge lamp lighting device has an oscillation control circuit for determining a frequency with time constant of R and C, a L-C series resonant circuit connected to a half bridge or full bridge operating at the frequency and a circuit in which one end of hot cathodes at both ends of a hot cathode type discharge tube are respectively connected to both ends of a resonant capacitor. A capacitor is further connected in series to other ends of filaments at both ends of the discharge tube for lighting. Dimming of tube current is achieved by changing the oscillation frequency with a DC dimming control voltage by use of a variable capacitor or diode for determining the frequency of the oscillation control circuit. By simultaneously changing the tube current and a filament current of the discharge lamp, the tube current is decreased upon dimming and the filament current is increased.

The invention provides an input voltage feedforward apparatus and method. The method includes steps: detecting a voltage value of an inductor in a first-stage transformation topology in a secondary control two-stage transformation topology; determining an input voltage value of a secondary control two-stage transformation topology power supply according to the voltage value of the inductor; and performing input voltage feedforward according to the input voltage value of the power supply. According to the apparatus and method, the problem of difficult realization of input voltage feedforward for the two-stage transformation topology is solved, and the effect of substantially reducing an over-charging voltage during rapid change of the input voltage of the switch power supply with the two-stage transformation topology is achieved.

The invention discloses a bidirectional thyristor and an electronic product. The bidirectional thyristor comprises a substrate; a first trap and a second trap which are formed on the substrate, wherein the first trap and / or the second trap are / is provided with a trigger area / a trigger area used for carrier emission. The electronic product comprises the bidirectional thyristor. The technical schemedisclosed by the invention can realize that overshoot voltage is formed as low as possible before the bidirectional thyristor is started.

The invention discloses a soft starting circuit applied in a buck type direct current (DC)-DC switch power supply. The soft starting circuit mainly resolves the problem that overshoot voltage and surge current exist in the existing starting circuit, and static power consumption is too large. The starting circuit comprises a frequency converter circuit, a control circuit and a current-voltage conversion circuit. The first output end of the frequency converter circuit is connected with the control circuit to output a soft starting ending signal OVER, and the second output end of the frequency converter circuit si connected with a current-voltage conversion circuit to output digital signals F1-F7. The first output end of the control circuit is connected with the frequency converter circuit to output a clearing signal clr, the second output end and the third output end of the control circuit are connected with the current-voltage conversion circuit to respectively output a digital signal F8 and a digital signal XF8, and the current-voltage conversion circuit outputs voltage signals VSS. The soft starting circuit adopts the current-voltage conversion circuit, improves output voltage stability, reduces static power consumption, shortens domain area, reduces cost and can be used for simulating an integrated circuit.

The invention discloses a package structure of a power semiconductor module, which is characterized in that it comprises a substrate; a casing, the casing is fastened to the substrate; and a power semiconductor module subunit is arranged between the casing and the substrate. In the accommodation space formed by the substrate, it is used to form a topology control circuit structure. The power semiconductor module subunit includes a plurality of backing boards arranged at intervals on the substrate, and the main power terminal is passed between the two facing backing boards. It is connected with the module-level bonding wire, and the top of the main power terminal extends out of the top of the housing; the auxiliary terminal is used to introduce the driving signal into the power semiconductor module subunit, and the bottom pin of the auxiliary terminal Connected with the liner, the top of the auxiliary terminal extends out of the top of the housing. The invention can improve the heat dissipation efficiency of the power semiconductor module, balance parasitic inductance or resistance parameters, improve the consistency of the process, have low loss and good reliability.

The invention belongs to the technical field of electronic circuits and relates to an adaptive voltage regulation circuit for a power converter. The circuit of the present invention includes a logic module, a conduction time generator, a first comparator, a second comparator and a control circuit; the input terminal of the logic module is connected to the output terminal of the power converter, and the output terminal is connected to the conduction time generator The output terminal of the circuit; the positive input terminal of the first comparator is connected to the output terminal of the power converter, the negative input terminal is connected to the output terminal of the control circuit, and the output terminal is connected to the input terminal of the control circuit; the second comparator The positive input terminal of the comparator is connected to the output terminal of the power converter, its negative input terminal is connected to the output terminal of the control circuit, and its output terminal is connected to the input terminal of the control circuit; the output terminal of the control circuit is connected to the input of the conduction time generator terminal; the output terminal of the on-time generator is connected to the power converter. The beneficial effect of the invention is that the inductance current in the voltage regulation process of the power converter is reduced, and the requirement on the inductance is lowered.

The invention discloses a method for improving the dynamic performance of a synchronous rectification primary-side feedback flyback power supply, aiming at the shortcomings of the existing dynamic control algorithm under low-power DCM, especially in the case of heavy load switching to light load, the dynamic recovery time For the defect of too long, by controlling the switching off of the primary side switching tube of the converter and the switching of the secondary side synchronous rectifier tube with a fixed duty ratio, the energy of the load capacitance at the output end is extracted to the primary side, so that the output voltage drops rapidly, and at the same time it is always at a fixed The frequency of the output voltage is sampled. When the output voltage drops to the rated value, it is judged according to the load size that the system corresponds to the steady state mode after jumping out of the high dynamic mode, and then the system enters the steady state mode. The invention can shorten the output voltage within 2.5ms, and the output voltage ripple is very small when the system leaves the dynamic mode and enters the steady state mode, and significantly improves the dynamic performance of the flyback converter under high power.

The invention relates to a groove-type anode fast recovery diode with bipolar Schottky control and its manufacturing method, comprising: a cathode metal, an N-type intrinsic region above the cathode metal, and an N-type intrinsic region above the N-type intrinsic region The anode metal is provided with lightly doped N-type regions and heavily doped N-type regions spaced apart from each other on the cathode metal, the bottom of the lightly doped N-type region is in Schottky contact with the cathode metal, and in the N-type intrinsic region There are heavily doped P-type regions and lightly doped P-type regions spaced apart from the anode metal, and the upper surface of the heavily doped P-type region is lower than the upper surface of the lightly doped P-type region, forming a concave In the slot-type anode area, the lightly doped P-type area and the anode metal are in Schottky contact. The manufacturing method of the two-pole Schottky-controlled recess type anode fast recovery diode is characterized in that the Schottky contacts on the surface of the anode and the side wall can be formed simultaneously by one-step etching.

The present invention provides a voltage generator, comprising: a first voltage regulator, which supplies an output voltage to an output terminal according to a reference voltage; a second voltage regulator, which decides to operate in an enable mode or a disable mode according to an enable signal, when the first The two voltage regulators operate in the enable mode to supply an output voltage to the output terminal according to the reference voltage; and the initial voltage generator, when the enable signal switches the second voltage regulator from the disable mode to the enable mode, the initial The voltage generator keeps the feedback voltage of the second voltage regulator at an initial voltage value close to the reference voltage, so that the feedback voltage of the second voltage regulator can be quickly locked to the reference voltage and reduce the settling time and overshoot voltage of the output voltage.

The present invention relates to a superjunction semiconductor device. In at least one cell structure of the superjunction semiconductor device, the first-type body region includes at least two segmented body regions arranged in the third direction, and the source region is disposed in a part of the segmented body region away from the drain region The surface of the gate oxide layer is arranged on the surface of another part of the segmented body region away from the drain region, and the gate is arranged on the surface of the gate oxide layer away from the segmented body region. In this cell structure, The segmented body region where the gate oxide layer and the gate are arranged is separated from the segmented body region where the source region is arranged, which can weaken the shielding effect of the first type doping column on the gate, and can increase the Miller capacitance Cgd compared with the traditional structure. Helps reduce turn-off speed, reduce overshoot voltage, improve EMI problems, and studies have shown that it has less impact on Qg and device withstand voltage performance.

The invention discloses a low overshoot voltage unidirectional TVS, which comprises a P-type substrate and an N+ concentrated phosphorus region diffused on the upper and lower surfaces of the P-type substrate, and the N+ concentrated phosphorus region covers the upper and lower surface areas of the P-type substrate respectively. 2 / 3-5 / 6; the upper surface of the TVS device is oxidized with a silicon dioxide passivation layer, the upper surface of the TVS device is provided with a metal electrode K, and the lower surface of the TVS device is provided with a metal electrode A; the invention also discloses the low A method for manufacturing an overshoot voltage unidirectional TVS, comprising the following steps: step S1, substrate preparation; step S2, oxidation; step S3, photolithography of the concentrated phosphorus region; step S4, diffusion of the concentrated phosphorus region; step S5, photolithography of the lead hole ; Step S6, steaming aluminum; Step S7, aluminum reverse etching; Step S8, steaming aluminum alloy; Step S9, steaming Ti-Ni-Ag alloy; Step S10, Ti-Ni-Ag reverse etching. Compared with the unidirectional TVS of the traditional structure, the present invention has one more concentrated phosphorus diffusion region and one less boron concentration diffusion region in structure, and diffuses the concentrated phosphorus region on the lower surface of the P-type substrate, which can effectively reduce the overshoot voltage and enhance the device. surge capability.

The invention discloses a diode chip manufacturing method. According to the method, at least one epitaxial layer is formed on a substrate; a groove region is formed on the epitaxial layer; ion implantation and diffusion are carried out through a first process condition, so that a first well region corresponding to the transverse PN junction is formed in the groove region, a second well region corresponding to the longitudinal PN junction is formed on the epitaxial layer, and a plurality of third well regions used for terminal ring regions are formed on the epitaxial layer; multiple times of ion implantation and diffusion are conducted under different process conditions so as to longitudinally form doped regions with different concentrations in the three well regions respectively; and a subsequent process is conducted to complete the manufacturing of the diode chip. The invention further discloses a diode chip structure. The technology is simple in process, the manufactured diode chip structure is smaller in size, the slow recovery characteristic is better, and the overshoot voltage at the cut-off moment of the MOS tube electrically connected with the diode chip structure can be greatly reduced in the flyback converter.