Asymmetric voltage stabilizing circuit used for NAND FLASH

A voltage stabilizing circuit, asymmetrical technology, applied in the direction of adjusting electrical variables, instruments, control/regulation systems, etc., can solve problems such as large overshoot voltage

Active Publication Date: 2016-01-13
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The NANDFLASH chip needs to use a voltage stabilizing circuit to output its internal output signal, but the current technology uses a symmetrical folded cascode structure voltage stabilizing circuit, which will cause a large overshoot voltage during use.

Method used

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  • Asymmetric voltage stabilizing circuit used for NAND FLASH
  • Asymmetric voltage stabilizing circuit used for NAND FLASH

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 1 A schematic structural diagram of an asymmetrical voltage stabilizing circuit for NAND FLASH flash memory provided in Embodiment 1 is given.

[0041] Such as figure 1 An asymmetric voltage regulator circuit for NAND FLASH flash memory provided in Embodiment 1 is characterized in that it includes: a bias module 100 , an error amplification module 200 , an output module 300 and a bandgap reference circuit 400 .

[0042] The output terminal of the bias module 100 is electrically connected to the input terminal of the error amplification module 200, and is used to convert the external input voltage into a first bias voltage, a second bias voltage, a third bias voltage and a fourth bias voltage. The bias voltage is input to the error amplifier module 200;

[0043] The output terminal of the error amplification module 200 is electrically connected to the input terminal of the output module 300, and is used to transform the differential signal according to the first...

Embodiment 2

[0051] figure 2 A schematic circuit diagram of an asymmetrical voltage stabilizing circuit for NAND FLASH flash memory provided in Embodiment 2 is given.

[0052] Combine below figure 2 An asymmetrical voltage stabilizing circuit for NAND FLASH flash memory provided in Embodiment 2 is described in detail.

[0053] Embodiment 2 provides an asymmetric voltage regulator circuit for NAND FLASH flash memory, wherein:

[0054] The function of the bias module 100 is to convert the external input voltage into a first bias voltage, a second bias voltage, a third bias voltage and a fourth bias voltage and input them to the error amplification module 200 .

[0055] The bias module 100 includes a first transistor 101 , a second transistor 102 , a third transistor 103 , a fourth transistor 104 , a fifth transistor 105 , a sixth transistor 106 and a seventh transistor 107 .

[0056] Wherein, the first transistor 101 , the second transistor 102 , the fifth transistor 105 and the sixth t...

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PUM

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Abstract

The invention discloses an asymmetric voltage stabilizing circuit used for NAND FLASH. The asymmetric voltage stabilizing circuit comprises a bias module, an error magnification module and an output module. An output end of the bias module is connected with an input end of the error magnification module such that external input voltage is converted into first bias voltage, second bias voltage, third bias voltage and fourth bias voltage and inputting the above into the error magnification module. An output end of the error magnification module is connected with an input end of the output module, which is used for amplifying differential signals based on the first bias voltage, the second bias voltage, the third bias voltage and the fourth bias voltage. A folding-type amplifier structure is adopted by the error magnification module, a differential output stage of which adopts an asymmetric structure. The times of differential output is at least two. The output module is used for receiving differential amplification signals inputted by the error amplification module and outputting the differential amplification. The asymmetric voltage stabilizing circuit used for NAND FLASH has following beneficial effects: an asymmetric folding-type cascade structure is adopted by the error magnification module such that less overshoot voltage is generated on the same power consumption.

Description

technical field [0001] The invention relates to the technical field of memory voltage stabilization output, in particular to an asymmetrical voltage stabilization circuit for NAND FLASH. Background technique [0002] With the continuous development of electronic products, chip technology is also undergoing tremendous changes. As a kind of flash memory, data storage flash memory (NANDFLASH) provides a cheap and effective solution for the realization of solid-state large-capacity memory due to its internal nonlinear macrocell mode. Data storage flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data, so it has been more and more widely used in the industry. For example, embedded products include digital cameras, MP3 walkman memory cards, Small and exquisite U disk, etc. [0003] But NANDFLASH also has certain deficiencies in its application field. The NANDFLASH chip needs to use a voltage stabilizing circ...

Claims

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Application Information

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IPC IPC(8): G05F1/56
Inventor 邓龙利
Owner GIGADEVICE SEMICON (BEIJING) INC
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