The invention discloses a self-excitation driving and power conversion circuit based on a GaN HEMT device. The self-excitation driving and power conversion circuit adopts the novel GaN-based HEMT device, and improves the working frequency of the circuit to MHz. The device adopts a
silicon substrate, and adopts on-
chip design of a Q1
transistor and a Q2
transistor, wherein the two transistors share one
wafer, so that the size is reduced, the cost is reduced, and the reliability control is improved. The device further adopts an integrated anti-parallel
diode structure, so that the reverse conduction characteristic of the device is improved. According to the self-excitation driving and power conversion circuit, through using a third auxiliary winding Na in a main
transformer of a power circuit, a self-excitation driving cavity in a
positive feedback mode is adopted to automatically provide a driving
signal for Q1, a control
chip is not needed, and the driving of the Q1 needs to be ensured to be reliable through a special driving buffer circuit for the GaN HEMT device. The self-excitation driving and power conversion circuit further adopts an integrated high-frequency
current cycle-by-
cycle detection scheme, and shares one coil with the self-excitation driving cavity, so that a current detection
resistor is omitted, and lossless current detection is realized.