Full-bridge integration module based on PCB embedding process

Abstract

The invention discloses a full-bridge integration module based on PCB embedding process. The full-bridge integration module comprises a full-bridge power circuit, high-frequency decoupling capacitors,a drive circuit, power devices and a radiator which are arranged on a PCB embedding module. The power devices are four gallium nitride devices or four silicon carbide devices which are connected in series and in parallel to form a full-bridge circuit, the full-bridge circuit is connected with the high-frequency decoupling capacitors and the drive circuit, and the full-bridge circuit, the high-frequency decoupling capacitors and the drive circuit are connected with the radiator to form an embedded full-bridge integration module. The full-bridge integration module greatly reduces the parasiticinductance, can promote the high-frequency operation of the wide bandgap device and is beneficial to the promotion of the power density of the system.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a full-bridge integrated module based on a PCB embedding process. Background technique [0002] Power electronics technology is an important supporting technology in the field of national economy and national security, and an important technical means to achieve energy conservation and environmental protection and improve people's quality of life. High-efficiency and high-quality power conversion is the ultimate goal of the development of power electronics technology. Traditional silicon devices have reached their theoretical limit, and the potential for improving the performance of power converters by continuing to optimize Si devices is very limited. Once a new generation of wide-bandgap semiconductor devices represented by gallium nitride and silicon carbide appeared, they showed performance far superior to silicon devices. Compared with silicon devices,...

AI Technical Summary

Problems solved by technology

Traditional power devices usually exist in the form of discrete devices or modules, and together with passive components such as capacitors, inductors, transformers, and other drive and control auxiliary circuits form power electronic circuits, such as figure 2 As shown, not only the power density is lower, but also lead to larger loop area and loop parasitic parameters

Therefore, traditional packaging and integration structures are not conducive to high-frequency applications of wide bandgap devices

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