The invention provides a production technology for a transient voltage suppressor chip with the channeling effect. By means of the steps of gaseous state source diffusion, channel corrosion and double-faced electrophoresis, in the reverse state, the width of depletion layers and the reverse voltage of the high-voltage transient voltage suppressor chip which is of the N+PN+ structure are increased along with the increase of a reverse current, when the reverse current is increased to be close to Ic, the depletion layers on the two faces make contact with each other, the channeling effect is produced, the equivalent resistance is reduced, the clamp voltage is reduced, the reverse surge capacity is improved, the reliability of a diode is improved, the service life of the diode is prolonged, and the transient voltage suppressor chip has the advantages of being good in electrical parameter uniformity, better in ohmic contact and high in reliability, the problem that the thicknesses of two glass layers are uneven due to two times of single-face electrophoresis is avoided, the glass is high in stress-resisting capability of protection and not prone to damage, and the reliability of the transient voltage suppressor chip is further improved.