A plasma etching method includes preparing in a reaction chamber a semiconductor substrate on which a material layer to be etched is provided; and injecting an etching gas into the reaction chamber, the etching gas being ionized through an RF (Radio Frequency) power source to generate a plasma, wherein the RF power source outputs RF power in a pulse output mode. The plasma etching apparatus includes a reaction chamber adapted to contain an etching gas; and an RF power source adapted to output RF power for excitation of the etching gas to generate plasma, wherein the apparatus further include a pulse control circuit adapted to control the RF power source to output RF power in a pulse output mode. With the invention, the plasma for etching can be generated in a pulse output mode, thus improving a precision of an endpoint where the etching can be disabled.