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46results about How to "No DC power consumption" patented technology

Capacitive temperature, humidity and air pressure sensor integrated manufacturing method based on SOI chip device layer silicon anodic bonding

The invention discloses a capacitive temperature, humidity and air pressure sensor integrated manufacturing method based on SOI chip device layer silicon anodic bonding. According to the integrated manufacturing method, a step-by-step deep silicon etching technology, SOI chip device layer silicon and a glass anodic bonding technology are combined for use so that a thin film structure, a flat large capacitance structure with a tiny electrode gap and a sealed cavity structure needed by an integrated sensor can be manufactured at the same time. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method is characterized in that plenary capacitance sensitive temperature, humidity and air pressure sensors are manufactured in an integrated mode, namely a low power consumption integrated multi-sensor structure is manufactured. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method can be used for realizing on-chip integration of the temperature, humidity and air pressure sensors, therefore, the area of the sensor integrated structure is greatly reduced, the length of an interconnection line is reduced, and the system reliability is improved.
Owner:SOUTHEAST UNIV

Bus hold circuit with power-down and over-voltage tolerance

A bus hold circuit of CMOS components that draws no DC current and is over voltage tolerant is described. No leakage current is drawn from the input when the input voltage is greater than the bus hold circuit supply voltage. A feedback inverter is used to s latch the Vin logic in the bus hold circuit. When Vin is low, it turns on a first switch that drives the gate of a PMOS switch low turning it on. The PMOS switch connects the power connection of the feedback inverter to Vcc. The gate remains low, keeping the PMOS switch turned on as Vin increases. The first switch is turned off, but the gate of the PMOS switch remains low, until Vin exceeds Vcc. At that point, a comparator drives the gate of the PMOS to Vin shutting the PMOS switch off. An arbiter circuit selects the higher of Vcc and Vin to bias the N-well of the PMOS switch and other PMOS components in the comparator and arbiter circuit. This biasing ensures that the N-wells are never forward biased, thereby preventing leakage from the Vin.
Owner:SEMICON COMPONENTS IND LLC

A reconfigurable dual band mixer is provided

The invention discloses a reconfigurable dual-band mixer. The mixer comprises a load and buffer stage circuit, a switch stage circuit, a local oscillator input end matching network, an interstage matching circuit, a transconductance stage circuit and a switch frequency selection matching network circuit. The reconfigurable dual-band mixer can be switched between two different frequency bands, thetransconductance stage adopts two paths of parallel to work at different frequencies respectively, and the transconductance stage works at different frequency bands through switch switching and a biascontrol circuit; The radio frequency input matching network combines the series connection of the matching circuits with different frequency bands and the switch frequency selection network, therebyensuring that the circuit can achieve the optimal performance when working in different frequency bands.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Direct heating type millimeter wave signal detector based on silicon-based micromechanical cantilever beam T-shaped junction

The invention relates to a direct heating type millimeter wave signal detector based on a silicon-based micromechanical cantilever beam T-shaped junction. The direct heating type millimeter wave signal detector is composed of a cantilever beam coupling structure, a T-shaped junction, a direct heating type microwave power sensor and a switch. The cantilever beam coupling structure comprises two groups of cantilever beams, each group of cantilever beams is composed of two symmetric cantilever beams, and the electric length of a CPW transmission line between the two cantilever beams at the central frequency 35GHz within a measured signal frequency range is lambda / 4. The power is detected by a first direct heating type microwave power sensor; the frequency is detected by the direct heating type microwave power sensor by measuring the synthetic power of two paths of coupling signals with a phase difference of 90 degrees at the central frequency; and the phase detection is realized by separately synthesizing the two paths of coupling signals with the phase difference of 90 degrees at the central frequency with two paths of equally divided reference signals, and detecting the synthetic power by suing the direct heating type microwave power sensor to obtain the phase of a to-be-detected signal.
Owner:SOUTHEAST UNIV

Symmetric MEMS directional microwave power coupler with on-line self-detection function

According to a symmetric MEMS directional microwave power coupler with an online self-detection function, the signal lines of the two sections of ACPS transmission lines are symmetrically distributedat the upper side and the lower side of a main transmission line, and the length of each section of ACPS transmission line is a quarter wavelength, so that a symmetrical directional coupler is formed.The incident microwave power is respectively coupled to the third coupling end port and the fifth coupling end port by utilizing the symmetrical directional coupler, so that the symmetric MEMS directional microwave power coupler has the output microwave power of two coupling ends, and the dual-port coupling output is realized. Four connection nodes of a CPW transmission line and an ACPS transmission line of the symmetric directional coupler are respectively provided with four capacitive MEMS microwave power sensors, and the capacitive MEMS microwave power sensors are used for measuring the microwave power transmitted by each port of two branches, thereby achieving an online self-detection function. In addition, by adopting a full-passive structure, the symmetric MEMS directional microwavepower coupler has the characteristics of zero direct-current power consumption, compatibility with a gallium arsenide monolithic microwave integrated circuit process and the like.
Owner:SOUTHEAST UNIV

Silicon-based cantilever beam coupled direct-heating type millimeter-wave signal detecting instrument

The invention discloses a silicon-based cantilever beam coupled direct-heating type millimeter-wave signal detecting instrument which is composed of a sensor module an analog / digital conversion module and a liquid crystal display module. The sensor module is composed of a cantilever beam coupled structure, a power divider / combiner, a direct-heating type microwave power sensor and a switch, a substrate material is high-resistance Si, and the power is detected by the direct-heating type microwave power sensor at a CPW signal line terminal corresponding to an input port; frequency detection is realized by measuring synthesis power of two paths of coupling signals with a phase difference of 90 degrees at the central frequency by utilizing the direct-heating type microwave power sensor; and phase detection is realized by respectively combining the two paths of the coupling signals with the phase difference of 90 degrees at the central frequency with two paths of equally divided reference signals, detecting the synthesis power by utilizing the direct-heating type microwave power sensor and obtaining the phase of a to-be-detected signal. The analog / digital conversion is realized by an MCS51 single-chip, and the liquid crystal display part is composed of three liquid crystal display screens.
Owner:SOUTHEAST UNIV

Dual-channel self-detection MEMS microwave power divider and preparation method thereof

The invention provides a dual-channel self-detection MEMS microwave power divider and a preparation method thereof. The dual-channel self-detection MEMS microwave power divider comprises a microwave power divider located on a gallium arsenide substrate, a thermoelectric MEMS microwave power sensor and three capacitive MEMS microwave power sensors. The microwave power divider is of a T-shaped symmetrical structure and comprises three ports, and an ACPS signal line is arranged in the middle of the microwave power divider. The thermoelectric MEMS microwave power sensor is located in an annular area formed by the ACPS signal line. Each capacitive MEMS microwave power sensor is connected with one of the ports through a CPW structure. By the capacitive MEMS microwave power sensors and the thermoelectric MEMS microwave power sensor, whether two ports of the MEMS microwave power divider are equally divided into microwave power or not or whether mismatch occurs or not can be detected on line inreal time through the capacitive channel and the thermoelectric channel; and the ratio of the microwave power at the input port to the microwave power at the output port is measured on line, so thatthe real-time on-line power self-detection of the MEMS microwave power divider is realized.
Owner:SOUTHEAST UNIV

Fixed beam directly heated microwave signal detector

The invention provides a clamped beam direct heating type microwave signal detector, which comprises a six-port clamped beam coupler, a channel selection switch, a microwave frequency detector, a microwave phase detector and a direct heating type microwave power sensor, wherein the above parts are in cascaded connection to form the clamped beam direct heating type microwave signal detector. The six-port clamped beam coupler consists of a coplanar waveguide, a dielectric layer, an air layer and a clamped beam. The power coupling degree from the first port to the third port and the fourth port of the six-port clamped beam coupler, and the power coupling degree from the first port to the fifth port and the sixth port of the six-port clamped beam coupler are the same with each other. A to-be-measured signal is input via the first port and then is outputted to the direct heating type microwave power sensor via the second port. After that, the signal is outputted to the microwave phase detector via the fourth port and the sixth port and outputted to the channel selection switch via the third port and the fifth port. The seventh port and an eighth port of the channel selection switch are connected with the direct heating type microwave power sensor. The ninth port and the tenth port of the channel selection switch are connected with the microwave frequency detector. In this way, the power, the phase and the frequency of a microwave signal are simultaneously detected.
Owner:SOUTHEAST UNIV

State-controllable symmetric thermoelectric MEMS microwave standing wave meter and preparation method thereof

The invention discloses a state-controllable symmetric thermoelectric MEMS microwave standing wave meter, which is characterized in that a symmetric directional coupler is adopted to extract incidentmicrowave power and reflected microwave power to a coupling end and an isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor is adopted to measure the power of each port of the two branches, more accurate incident microwave power and reflected microwave power can be obtained by averaging, and then the standing-wave ratio can be obtained. Thedesigned two branches can work independently to realize a measurement function, so that the failure rate is reduced; in order to realize a state switching function of the MEMS microwave standing wavemeter, an MEMS microwave switch is additionally arranged on an extraction branch of the MEMS microwave standing wave meter; and when the MEMS microwave switch is in an off state, the incident microwave power is not extracted any more and is directly transmitted to an output port, so that the loss of the microwave power when detection is not needed is reduced. The state-controllable symmetric thermoelectric MEMS microwave standing wave meter improves the reliability of the MEMS microwave standing wave meter, and has the characteristics of low loss, small chip area and compatibility with a gallium arsenide monolithic microwave integrated circuit process.
Owner:SOUTHEAST UNIV

Low-power consumption power source detector based on information system

A low-power consumption power source detector based on an information system comprises a first capacitor, a second capacitor, a first resistor, a second resistor, a third resistor, a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, a seventh NMOS transistor, a first PMOS transistor, a second PMOS transistor, a third PMOS transistor and a fourth PMOS transistor. The low-power consumption power source detector based on the information system cannot be influenced by a direct current supply voltage, and the power consumption is small, the frequency collecting range of a forward direction power source glitch voltage is wide.
Owner:成都贝发信息技术有限公司

Anti-tampering bluetooth bracelet with low power consumption, binding, management method and system for outsiders

The present invention is applicable to the technical field of bluetooth communication, and provides a low-power-consumption tamper-proof bluetooth wristband, binding and management methods and systems for out-of-prison personnel. The server of the mobile terminal and the management terminal; the Bluetooth wristband is used to send tampering alarm information to the client of the prisoner outside the prison when the built-in conductive circuit is detected to be disconnected; the client of the prisoner outside the prison is used to receive the broken Demolition alarm information, and send the tamper alarm information to the server; it is also used to regularly send the GPS location information of the mobile terminal location to the server; the server is used to receive and save the tamper alarm information sent by the client terminal of the personnel outside the prison; It is also used to receive and save the GPS location information sent by the client of the prisoner outside the prison, and send a cross-border warning message to the client of the prisoner outside the prison when the preset activity area is exceeded. The management system for persons outside the prison provided by the invention has low power consumption and low cost.
Owner:SHENZHEN UNIV

A state-controllable symmetrical thermoelectric mems microwave standing wave meter and its preparation method

A state-controllable symmetrical thermoelectric MEMS microwave standing wave meter of the present invention adopts a symmetrical directional coupler to extract the incident and reflected microwave power to the coupling end and isolation end of the upper and lower branches respectively; The MEMS microwave power sensor measures the power of each port of the two branches, and taking the average value can obtain more accurate incident and reflected microwave power, and then the standing wave ratio can be obtained; the designed two branches can also realize the measurement function, reducing The failure rate is improved; in order to realize the state transition function of the MEMS microwave standing wave meter, a MEMS microwave switch is added to its extraction branch; when the MEMS microwave switch is in the off state, the incident microwave power is no longer extracted and is directly transmitted to the output port. The loss of microwave power when no detection is required is reduced. The state-controllable symmetric thermoelectric MEMS microwave standing wave meter improves the reliability of the MEMS microwave standing wave meter, and has the characteristics of low loss, small chip area and compatibility with gallium arsenide monolithic microwave integrated circuit technology.
Owner:SOUTHEAST UNIV

Directly Heated Millimeter-Wave Signal Detector Based on Silicon-Based Micromachined Cantilever T-junction

The silicon-based micromechanical cantilever beam T-junction direct heating millimeter wave signal detector of the present invention is composed of a cantilever beam coupling structure, a T-junction, a direct heating microwave power sensor and a switch. The cantilever beam coupling structure includes two sets of cantilever beams, each set of cantilever beams is composed of two symmetrical cantilever beams, and the electrical length of the CPW transmission line between the two cantilever beams is λ / 4 at the center frequency of 35GHz within the frequency range of the measured signal . The power is detected by the first direct heating microwave power sensor; the frequency detection is realized by using the direct heating microwave power sensor to measure the composite power of two coupled signals with a phase difference of 90 degrees at the center frequency; the phase detection is achieved by combining the two The coupled signal with a phase difference of 90 degrees at the center frequency is synthesized with two equally divided reference signals respectively, and the synthesized power is also detected by a direct heating microwave power sensor to obtain the phase of the signal to be measured.
Owner:SOUTHEAST UNIV

Clamped beam T-shaped junction direct heating type microwave signal detector

The invention provides a clamped beam T-shaped junction direct heating type microwave signal detector. The clamped beam T-shaped junction direct heating type microwave signal detector is constituted by cascading a six-interface clamped beam coupler, a channel selection switch, a microwave frequency detector, a microwave phase detector and a direct heating type microwave power sensor; the coplanar waveguide length between two clamped beams is lambda / 4; the power coupling from a first interface to a third interface and to a fourth interface and from the first interface to a fifth interface and to a sixth interface of the six-interface clamped beam coupler is the same respectively, and a signal to be detected is input through the first interface, is output to the direct heating type microwave power sensor through a second interface, is output to the microwave phase detector through the fourth interface and the sixth interface, and is output to the channel selection switch through the third interface and the fifth interface; a seventh interface and an eighth interface of the channel selection switch are connected to the direct heating type microwave power sensor, and a ninth interface and a tenth interface of the channel selection switch are connected to the microwave frequency detector; the purpose of simultaneously detecting the power, the phase and the frequency of a microwave signal through one chip is achieved.
Owner:SOUTHEAST UNIV

MEMS humidity sensor based on phase detection principle and preparation method

The invention provides an MEMS humidity sensor based on a phase detection principle and a preparation method. The sensor comprises a CPW transmission line which is disposed on a substrate, the CPW transmission line comprises a CPW signal line and CPW ground lines at two sides of the CPW signal line, and the substrate below the middle part of the CPW signal line is provided with a groove; MEMS beams are positioned on the bottom surface of the groove and two side surfaces close to the CPW ground lines; an MEMS film is positioned above the groove and is in contact with the bottom surface of the CPW signal line, and a through hole is formed in the surface of the MEMS film; and a humidity sensing layer is located between the MEMS beams and the MEMS film and fills the internal space of the groove. The humidity of the external environment is sensed by utilizing the water absorption of the humidity sensing layer in the groove, the dielectric constant of the humidity sensing layer can change along with the humidity, the capacitance between the MEMS beams and the CPW signal line is changed, the phase of an RF signal on the CPW transmission line is changed, and the environment humidity can be obtained by measuring the phase of the RF signal.
Owner:NANJING GAOHUA TECH

Sphere off-position and falling into span insulation slot ceiling lamp shaped earthquake approach alarm

The invention relates to a ceiling lamp type impending earthquake alarm by the movement and the fall of a sphere into a spanned insulated ditch. A triangle plate is added at the top end of a horizontal hammerhead, a conical metal disk is arranged on the plane of the triangle plate, and a hole is arranged in the center of the conical disk. When the invention stands by, the metal sphere is arrangedat the upside of the hole; when the metal sphere shakes, moves and falls in the insulated ditch, an alarm circuit is bridged and switched on so as to send out alarms and in advance evacuate people who do not sense an earthquake yet. Particularly when the earthquake occurs late at night, the alarm not only sends out the alarms to wake up people in sleep to hurriedly evacuate, but also can automatically light a ceiling lamp in case people in an impending earthquake hurry can not touch a switch. The metal sphere absolutely can not send out the alarms in stillness, namely that a building absolutely can not collapse without reasons; when the metal sphere moves and falls, and the alarm sends out the alarms, namely that the building is in shake, and an earthquake portent occurs. The invention isoptimal quakeproof equipment for treating the earthquake occurring late at night.
Owner:朱祚睿

Integrated manufacturing method of capacitive temperature, humidity and air pressure sensors based on silicon anode bonding of soi chip device layer

The invention discloses a capacitive temperature, humidity and air pressure sensor integrated manufacturing method based on SOI chip device layer silicon anodic bonding. According to the integrated manufacturing method, a step-by-step deep silicon etching technology, SOI chip device layer silicon and a glass anodic bonding technology are combined for use so that a thin film structure, a flat large capacitance structure with a tiny electrode gap and a sealed cavity structure needed by an integrated sensor can be manufactured at the same time. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method is characterized in that plenary capacitance sensitive temperature, humidity and air pressure sensors are manufactured in an integrated mode, namely a low power consumption integrated multi-sensor structure is manufactured. The capacitive temperature, humidity and air pressure sensor integrated manufacturing method can be used for realizing on-chip integration of the temperature, humidity and air pressure sensors, therefore, the area of the sensor integrated structure is greatly reduced, the length of an interconnection line is reduced, and the system reliability is improved.
Owner:SOUTHEAST UNIV

MEMS pressure sensor based on frequency detection principle and preparation method thereof

The invention discloses an MEMS pressure sensor based on the frequency detection principle. A planar spiral inductor is adopted, an MEMS variable parallel plate capacitor is arranged on one side of the inductor, and an LC resonance circuit is formed; the MEMS capacitor is connected in parallel between the CPW signal line and the ground wire, an upper pole plate of the MEMS capacitor is the CPW signal line and is directly arranged on the MEMS film, a groove is formed in the substrate under the MEMS film, and a lower pole plate of the MEMS capacitor is positioned on the bottom surface of the groove and two side surfaces close to the ground wire and is connected with the ground wire; the two ends of the MEMS film are arranged on the ground wire and form a closed cavity with the groove. The external pressure intensity is sensed by utilizing the closed cavity, when the internal and external pressure difference of the closed cavity is changed, the MEMS film is bent to cause the capacitance between the upper pole plate and the lower pole plate of the MEMS capacitor to change, so the resonant frequency of an RF signal on the CPW transmission line is shifted, and the magnitude of the detection pressure can be represented by measuring the resonant frequency value.
Owner:NANJING GAOHUA TECH

Fixed beam t-junction direct heating microwave signal detection instrument

The invention provides a clamped beam T-shaped junction direct heating type microwave signal detector. The clamped beam T-shaped junction direct heating type microwave signal detector is constituted by cascading a sensor, a digital-to-analogue conversion unit, an MCS51 single chip computer and a liquid crystal display, and the sensor is composed of a six-interface clamped beam coupler, a channel selection switch, a microwave frequency detector, a microwave phase detector and a direct heating type microwave power sensor; the power coupling from a first interface to a third interface and to a fourth interface and from the first interface to a fifth interface and to a sixth interface of the six-interface clamped beam coupler is the same, and a signal to be detected is input through the first interface, is output to the direct heating type microwave power sensor through a second interface, is output to the microwave phase detector through the fourth interface and the sixth interface, and is output to the channel selection switch through the third interface and the fifth interface; a seventh interface and an eighth interface of the channel selection switch are connected to the direct heating type microwave power sensor, and a ninth interface and a tenth interface of the channel selection switch are connected to the microwave frequency detector; the purpose of simultaneously detecting the power, the phase and the frequency of a microwave signal is achieved.
Owner:SOUTHEAST UNIV

Symmetric thermoelectric MEMS microwave standing wave meter and preparation method thereof

The invention discloses a symmetric thermoelectric MEMS microwave standing wave meter, which is characterized in that signal lines of ACPS transmission lines at the two ends are symmetrically distributed on the upper side and the lower side of a main transmission line to form a symmetric directional coupler, and incident microwave power and reflected microwave power are extracted to a coupling endand an isolation end of an upper branch and a lower branch respectively; a thermoelectric MEMS microwave power sensor is connected to the tail end of each CPW transmission line of the upper branch and the tail end of each CPW transmission line of the lower branch respectively to measure the microwave power of each port of the two branches, the average value of the measured output thermal voltageis obtained, more accurate incident microwave power and reflected microwave power can be obtained, and then the standing-wave ratio is obtained. If one branch circuit stops working, the other branch can still work normally, that is, the MEMS microwave standing wave meter can still carry out measurement, so that the failure rate is reduced. According to the symmetric thermoelectric MEMS microwave standing wave meter, the reliability of the MEMS microwave standing wave meter is improved, and the MEMS microwave standing wave meter has the characteristics of zero direct-current power consumption and compatibility with a gallium arsenide monolithic microwave integrated circuit process due to adoption of a fully passive structure.
Owner:SOUTHEAST UNIV

Fixed beam T-junction directly heated microwave signal detector

The invention provides a clamped beam T-shaped junction direct heating type microwave signal detector. The clamped beam T-shaped junction direct heating type microwave signal detector is constituted by cascading a six-interface clamped beam coupler, a channel selection switch, a microwave frequency detector, a microwave phase detector and a direct heating type microwave power sensor; the coplanar waveguide length between two clamped beams is lambda / 4; the power coupling from a first interface to a third interface and to a fourth interface and from the first interface to a fifth interface and to a sixth interface of the six-interface clamped beam coupler is the same respectively, and a signal to be detected is input through the first interface, is output to the direct heating type microwave power sensor through a second interface, is output to the microwave phase detector through the fourth interface and the sixth interface, and is output to the channel selection switch through the third interface and the fifth interface; a seventh interface and an eighth interface of the channel selection switch are connected to the direct heating type microwave power sensor, and a ninth interface and a tenth interface of the channel selection switch are connected to the microwave frequency detector; the purpose of simultaneously detecting the power, the phase and the frequency of a microwave signal through one chip is achieved.
Owner:SOUTHEAST UNIV

Silicon cantilever coupled T-junction indirectly-heating type millimeter wave signal detecting device

The silicon cantilever coupled T-junction indirectly-heating type millimeter wave signal detecting device comprises a sensor module, an analog-to-digital conversion module and a liquid crystal display module. The sensor module is composed of a cantilever coupled structure, a T-junction indirectly-heated type microwave power sensor and a switch. Substrate materials are high resistivity of silicon and the power are tested by the indirectly-heated type microwave power sensor through the CPW signal wire terminal corresponding to an input port. The frequency detecting are achieved by measuring the synthesis power of the two-branch coupling signal with 90 degrees phase difference in the central frequency using the indirectly-heated type millimeter wave power sensor; Phase detecting are achieved by compositing the reference signal of the equal division each to the two-branch coupling signal with 90 degrees phase difference in the central frequency, likewise, the synthesis power are measured by the indirect heating type microwave power sensor, thereby obtaining the phase to be measured. Analogue-to-digital conversion is achieved by the MCS51 single-chip, and the liquid crystal display is composed of three LCD screens.
Owner:SOUTHEAST UNIV

Silicon-based cantilever beam-based T-junction direct heating millimeter wave signal detection instrument

The invention relates to a silicon-based cantilever beam coupling-based T-junction direct heating millimeter wave signal detection instrument, which comprises a sensor module, an analog-to-digital converter module and a liquid crystal display module, wherein the sensor module consists of a cantilever beam coupling structure, a T-junction direct heating microwave power sensor and a switch, and a substrate material is high-resistance Si; the power is detected by the direct heating microwave power sensor at a CPW (Coplanar waveguide) signal line terminal corresponding to an input port, and the frequency detection is realized by using the direct heating microwave power sensor to measure the synthesis power of two paths of coupling signals with a phase difference of 90 degrees at the center frequency; and the phase detection is realized by respectively synthesizing the two paths of coupling signals with a phase difference of 90 degrees at the center frequency and two paths of halved reference signal, and the synthesis power is detected by the direct heating microwave power sensor to obtain the phase of the signal to be measured. The analog-to-digital converter is realized by a single-chip microcomputer MCS51, and the liquid crystal display part consists of three liquid crystal display screens.
Owner:SOUTHEAST UNIV

Mems pressure sensor based on frequency detection principle and preparation method

The MEMS pressure sensor based on the principle of frequency detection adopts a planar spiral inductor, and a MEMS variable parallel plate capacitor is set on one side of the inductor to form an LC resonant circuit; the MEMS capacitor is connected in parallel between the CPW signal line and the ground wire, and its upper pole The plate is a CPW signal line, and the upper plate is directly placed on the MEMS film, and a groove is set on the substrate directly below the MEMS film, and the lower plate of the MEMS capacitor is located on the bottom surface of the groove and two sides close to the ground wire and connected to the ground wire; both ends of the MEMS film are placed on the ground wire to form a closed cavity with the groove. The closed cavity is used to sense the external pressure. When the pressure difference between the inside and outside of the closed cavity changes, the MEMS film deflects, causing the capacitance between the upper plate and the lower plate of the MEMS capacitor to change, which makes the RF signal on the CPW transmission line The resonant frequency shifts, and the detected pressure can be characterized by measuring the resonant frequency value.
Owner:NANJING GAOHUA TECH

Silicon-based cantilever coupled indirect heating millimeter-wave signal detection instrument

A silicon-based cantilever beam coupling indirect heating type millimeter wave signal detection instrument provided by the invention comprises three modules of sensors, analog-to-digital conversion and liquid crystal display, a sensor module comprises a cantilever beam coupling structure, a power distributor / combiners, indirect heating type microwave power sensors and switches, the substrate material is high-resistance Si, and power is detected through the indirect heating type microwave power sensors of a CPW signal line terminal corresponding to input ports; frequency detection is realized by use of the indirect heating type microwave power sensors to measure synthesis power of two paths of coupling signals whose phase difference at a center frequency is 90 degrees; and as for phase detection, the two paths of coupling signals whose phase difference at the center frequency is 90 degrees are synthesized with two paths of equally divided reference signals, and the indirect heating type microwave power sensors are also utilized to detect the synthesis power, thereby obtaining the phase of signals to be measured. The analog-to-digital conversion is realized by an MCS51 single-chip microcomputer, and the liquid display part consists of three liquid crystal display screens.
Owner:SOUTHEAST UNIV

Clamped beam T-shaped junction direct heating on-line known frequency microwave phase detector

The invention provides a clamped beam T-shaped junction direct heating on-line known frequency microwave phase detector. The clamped beam T-shaped junction direct heating on-line known frequency microwave phase detector is composed of a six-interface clamped beam coupler, a microwave phase detector and a direct heating type microwave power sensor; the six-interface clamped beam coupler is composed of a coplanar waveguide, a medium layer, an air layer and clamped beams; the coplanar waveguide is on a SiO2 layer, the medium layer is deposited below the clamped beam, the medium layer and the air layer constitute a coupling capacitance structure, and the coplanar waveguide length between the two clamped beams is lambda / 4; the power coupling from a first interface to a third interface and to a fourth interface and from the first interface to a fifth interface and to a sixth interface of the six-interface clamped beam coupler is the same, and a signal to be detected is input through the first interface of the six-interface clamped beam coupler, is output to the direct heating type microwave sensor through the third interface and the fifth interface, and is output to the microwave phase detector through the fourth interface and the sixth interface, and is output to an inferior processing circuit through a second interface; finally on-line phase detection from 0-360 degrees of a known frequency signal is achieved.
Owner:SOUTHEAST UNIV

MEMS pressure sensor based on phase detection principle and preparation method thereof

The invention provides an MEMS pressure sensor based on a phase detection principle and a preparation method thereof, and the sensor comprises: a CPW transmission line which is disposed on a substrate, wherein the CPW transmission line comprises a CPW signal line and CPW ground lines located at two sides of the CPW signal line, the CPW signal line is parallel to the CPW ground lines, and a groove is disposed on the substrate and located below the CPW signal line; an MEMS beam which is positioned on the bottom surface of the groove and two side surfaces close to the CPW ground wire, is in an inverted arch bridge shape and is connected with the CPW ground wire; and an MEMS thin film which is located above the groove and makes contact with the bottom face of the CPW signal line, wherein the two ends of the MEMS thin film are arranged on the CPW ground line, and a closed cavity is formed by the MEMS thin film and the groove. The closed cavity is used for sensing the pressure intensity of the external environment, and the phase difference of the RF signal before and after transmission on the CPW transmission line changes, so that the environment pressure intensity can be obtained by measuring the phase of the RF signal.
Owner:NANJING GAOHUA TECH

Ultra-wideband pulse signal transmitting device and ultra-wideband pulse radar system

The invention relates to an ultra-wideband pulse signal transmitting device and an ultra-wideband pulse radar system. The ultra-wideband pulse signal transmitting device comprises a pulse signal generating module, which is used for generating ultra-wideband pulse signals with a certain number of single pulses; a driving module, which is used for amplifying the ultra-wideband pulse signal; a poweramplifying module, which is used for amplifying the power of the ultra-wideband pulse signal subjected to signal amplification to generate a transmitting signal; and a switch control module, which isused for controlling the driving module and the power amplification module to be switched off in a preset time period. The ultra-wideband pulse signal transmitting device adopts an ultra-wideband pulse signal generating circuit realized by an all-digital logic circuit, and only generates transient power consumption in the working process without direct current power consumption, so that the powerconsumption of the system can be obviously reduced.
Owner:西安芯屹科技有限公司

Slope control circuit for erasing and writing voltage of non-volatile memory and non-volatile memory

The invention discloses a slope control circuit of erase voltage of a nonvolatile memory and the nonvolatile memory, wherein the slope control circuit comprises a charge pump, a charge pump clock control unit and a detection unit; the charge pump is used for generating target voltage; the detection unit is used for producing the target voltage into detection voltage according to received pulse clock signals; and the charge pump clock control unit is used for comparing the detection voltage with reference voltage and outputs the received charge pump clock signals to a clock input end of the charge pump according to comparison results. The slope control circuit can control the rising slope of voltage by adjusting detection capacitance, reference voltage or the cycle of pulse clock signals, and the output of the charge pump does not have direct-current power consumption and has high efficiency.
Owner:SHANGHAI BEILING
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