The invention is an electron mechanism microwave power sensor whose end can be heated directly and its manufacturing method. The method uses terminal load to realize the power absorption and converted into heat energy, measures the input power with temperature measurement, the structure uses thermocouple as terminal load, and converts the energy inputted from the coplanar waveguide, then measures the size of power by converting it into voltage mode. In the structure, the sensor includes substrate, coplanar waveguide grounding wire, coplanar waveguide signal wire, gold thermocouple arm, AlGaAs thermocouple arm, bonding pad, ohm contact, media; the manufacturing steps are: GaAs substrate preparation, AlGaAs depositing, ion injection and mixing, AlGaAs photoetching and etching out the thermocouple arm, depositing AUGE co-crystal, Ni and Au, photoetching, high temperature quenching, depositing SION media layer, depositing the metal and etching out the coplanar waveguide and part of thermocouple pipe, depositing media layer, producing the bonding pad.