Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof

A technology of micromechanical sensor and microwave power, which is applied in the direction of electric power measurement by thermal method, and the transmission of sensing components and instruments by electric/magnetic devices, which can solve the problems of slow response and low burning level, and achieve fast response speed, Improvement of repeatability reliability and effect of high reliability

Inactive Publication Date: 2006-09-13
SOUTHEAST UNIV
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  • Abstract
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Problems solved by technology

[0004] The traditional power meter uses a thermoelectric power sensor in the form of a waveguide: bismuth-antimony is commonly used as a thermocouple, and a coaxial cable is used as a transmission line. Its main disadvantages are slow response, low burnout level, and attenuators are used when measuring high power

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  • Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof
  • Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof
  • Indirect heating terminal type microwave power micro-mechanical sensor and preparation method thereof

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Embodiment Construction

[0032] The specific structure of the indirect heating terminal microwave power micromechanical sensor of the present invention is as follows: a coplanar waveguide 1 and a thermopile 3 are provided on the substrate 5, and a terminal resistor is provided on the inner ends of the coplanar waveguide 1 and the thermopile 3 2. A contact pad 4 is provided at the outer end of the thermopile 3; wherein the thermopile 3 is composed of a thermocouple arm 6, a SiON medium 7, a metal interconnection line 8, and a contact area 9, and the thermocouple arm 6 and the SiON medium 7 are Strips are arranged at intervals along the length direction of the sensor, and a contact area 9 is provided on the thermocouple arm 6, and a metal interconnection line 8 is provided on the SiON medium 7 and the contact area 9; between the coplanar waveguide 1 and the metal interconnection An insulating medium 10 is provided on the inner end of the connection line 8 , and a terminal resistor 2 is provided on the to...

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Abstract

The invention discloses indirect heating terminal type microwave power tiny machine sensor and its producing method, it is the product and method which uses terminal load type to achieve power-quantity of heat-voltage transferring to detect microwave power. There are coplane wave-guide and thermopile set on the underlay, and terminal resistance are set on them, a contact pads is set on the outer end of the thermopile; The producing method of the invention is: epitaxial growing GaAs on the underlay, mixing AlGaAS at the same time; photolithography AlGaAs and getting thermal couple arm, sending metal layer Ni / AuGe, and curving metal layer, annealing and getting contact area, depositing SiON dielectric layer, and photolithography, curving to get interconnection dactylopore of thermopile, depositing Au and photolithography coplanar wave-guide and metal interties; curving to get terminal resistance, photolithography and curving dielectric layer, to get insulating dielectric layer between terminal resistance and thermopile.

Description

technical field [0001] The invention is a microelectromechanical structure product and a preparation method thereof, which realizes the power-heat (temperature)-voltage conversion mode to measure microwave power in the form of a terminal load, and belongs to the technical field of microelectronic devices. Background technique [0002] In microwave technology research, microwave power is an important parameter to characterize microwave signal characteristics. In the research of microwave signal generation, transmission and reception, etc., microwave power measurement is indispensable, and it has become an important part of electromagnetic measurement. There are a lot of research in this field at home and abroad, but there are still few microstructure microwave power sensors developed by MEMS (micro-electromechanical system technology), and our country has researched this aspect for many years. [0003] In communications and integrated circuits, higher...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R21/02G01R22/04G01D5/12
Inventor 廖小平范小燕
Owner SOUTHEAST UNIV
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