44results about How to "Fully expanded" patented technology

The present invention provides a bonding composition and an electronic component bonding body, which can obtain high bonding strength by bonding at a relatively low temperature, maintain sufficient spread toward the interface to be bonded, and suppress formation of solder joints. The invention provides a composition for bonding, which includes inorganic particles and organic components: the average particle diameter of the inorganic particles is 1nm to 200nm, and at a shear rate of 10s ‑1 The viscosity at approximately 25°C is 10Pa·s~30Pa·s, and at a shear rate of 1s ‑1 The viscosity at approximately 25°C when measured under is divided by the shear rate of 10s ‑1 The thixotropic ratio defined by the value obtained by the viscosity at approximately 25°C at the time of measurement is 3-7.

The invention discloses a portable high-position garbage can. The portable high-position garbage can comprises a can body and a garbage bag arranged on the can body in a sleeving mode; a cover plate is hinged to one end of the top of the can body; rolling wheels are pivoted to the bottom of the can body; an opening is formed in the side wall of one side surface of the can body; a turning cover matched with the opening in size is pivoted to the lower end of the opening; the upper end of the turning cover is movably connected with the upper part of the can body through a clamping piece; a supporting rotating plate is arranged at the bottom of the inner wall of the can body; and the end, close to one side of the turning cover, of the supporting rotating plate is connected with the end of theturning cover through an arc-shaped block. The garbage can is provided with the supporting rotating plate and the turning cover, so that the filled garbage bag is taken out of the side direction of the garbage can, meanwhile, the supporting rotating plate can apply force to the garbage bag from the lower side to the inclined upper side and push the garbage bag out of the garbage can, and the situation that the garbage bag is damaged due to the fact that the garbage bag is lifted from top to bottom conventionally is avoided. Meanwhile, the supporting rotating plate and the turning cover are improved, the garbage bag is arranged on the garbage can from bottom to top in a sleeving mode through arrangement of the limiting piece, the garbage bag which is arranged in a sleeving mode is unfoldedmore completely, and the garbage bag is prevented from being suspended in the garbage can.

The invention discloses a postpartum fumigation nursing device used in obstetrics and gynecology, and relates to the technical field of postpartum nursing. The postpartum fumigation nursing device for obstetrics and gynecology includes a fumigation box, a storage mechanism, a swing mechanism, a driving mechanism and a fumigation mechanism are arranged on the fumigation box. The box is located below the bearing plate, a seat cushion is fixedly installed on the top of the bearing plate, a backrest is arranged inside the fumigation box, and a support seat is fixedly arranged at the bottom of the backrest. The postpartum fumigation nursing device used in the obstetrics and gynecology department, the puerpera sits on the cushion, back to back, and hands rest on the hand rest, so that the body can be fully expanded, the area of ​​fumigation is increased, and the effect of fumigation is improved. Compared with Compared with most of the fumigation devices on the market, the fumigation effect is better. The treatment box with the flip-up structure design is easy to clean after use. The structure is simple, the use is convenient, and the actual use experience is improved.

The invention discloses an LED (Light-Emitting Diode) chip and a manufacturing method of the LED chip. The manufacturing method of the LED chip comprises the steps of continually generating structures comprising an electrode layer and an insulating layer and the like after an electrode group is generated, and two steps of the traditional flip chip process are optimized; and meanwhile, the method can effectively control the thickness of the LED chip. A pair of traditionally-arranged electrodes into a first electrode group and a second electrode group which are distributed at the corresponding regions of a pipe core; and sufficient current expansion can be obtained by the structure to uniformly distribute current, so that the uniform device has good luminous efficiency and uniform luminous rate, thereby meeting the requirement of further increasing the chip size.

A communication device (10;20) includes a communication circuit unit (11,75) processing a high-frequency signal, a transmission path (74) connected to the communication circuit, a ground (18,28,72), a coupling electrode (14,24,78) supported so as to face the ground and to be separated by a height negligible with respect to the wavelength of the high-frequency signal, a resonating unit (12-14,22-24;73,76-78) increasing a current flowing into the coupling electrode via the trans path, and an extended section formed of a conductor disposed near a front of the coupling electrode with an angle ¸ formed relative to a direction of a microdipole being approximately 0 degree, the microdipole being formed of a line segment connecting a center of charges stored in the coupling electrode and a center of mirror-image charges stored in the ground (18,28), the conductor extended in a lateral direction approximately orthogonal to a propagating direction of an electric-field signal occurring from the front of the coupling electrode.

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method therefor and belongs to the field of light emitting diodes. The light emitting diode epitaxial wafer comprises a substrate, and a non-doped layer, an N-type layer, an N-type current expansion layer, a multi-quantum well layer and a P-type layer which are formed on the substrate in sequence. The N-type current expansion layer comprises an AlGaN / n-GaN superlattice structure. The content of Al in an AlGaN sublayer of the AlGaN / n-GaN superlattice structure is increased layer by layer in the growth direction of the epitaxial wafer and is from 10% to 80%.

The invention discloses a rectangular plane cathode arc evaporation source of combination magnetic fields, which comprises a rectangular target material flat plate. A middle shaft permanent magnet, four end corner permanent magnets and at least two long circular electromagnetic coils are arranged right below the target material flat plate at the position a certain distance away from the target material flat plate. The electromagnetic coils are parallelly arranged along the edge of the target material flat plate in annular sleeving mode and are connected with an adjustable direct current power supply through wires, the four end corner permanent magnets are respectively arranged at the positions of four end corners, wherein the middle shaft permanent magnet is arranged on the inner side of the electromagnetic coil on the innermost side along the long axial direction, the magnetic fields formed by the middle shaft permanent magnet, the end corner permanent magnets and the electromagnetic coils have the same polarity. The rectangular plane cathode arc evaporation source of combination magnetic fields can achieve high utilization rate of a target material and form fine and smooth film layers no matter magnetizing current is changed or not.