38results about How to "Electrical resistance" patented technology

A semiconductor device is provided with: a solid device having a connection surface formed with a connection electrode projected therefrom; a semiconductor chip which has a functional surface formed with a metal bump projected therefrom and which is bonded to the connection surface of the solid device as directing its functional surface to the connection surface and maintaining a predetermined distance between the functional surface and the connection surface; and a connecting member containing a low melting point metal having a lower solidus temperature than that of the connection electrode and the bump, and interconnecting the connection electrode and the bump. A sum of a height of the connection electrode and a height of the bump is not less than a half of the predetermined distance.

A membrane electrode assembly includes a flouorine-based ion exchange resin membrane, a diffusion layer and a catalyst layer that supports a battery reaction. The catalyst layer is formed from Pt-carrying carbon nanotubes that is oriented on the fluorine-based ion exchange resin membrane, and non-Pt-carrying carbon nanotubes that is oriented on the diffusion layer.

Provided is an electrolysis cell and an electrolyzed water producing equipment which are each small in size, has excellent electrolysis efficiency and can reduce an anion concentration in acidic electrolyzed water. The electrolysis cell is equipped with electrolysis rooms 10a and 10b located opposite to each other via an ion permeable membrane 2, raw water supply units 11a and 11b, electrodes 3a and 3bdisposed with the membrane interposed therebetween, and electrolyzed water discharge units 12a and 12b. The membrane 2 is an anion permeable film. The electrodes 3a and 3b are formed so as to firmly adhere to both surfaces of the anion permeable membrane 2 and expose a portion of the anion permeable membrane 2. Only raw water fed to the electrolysis room 10b on the cathode side contains an electrolyte. The electrodes 3a and 3b are porous and they each has an electrode base material made of a powdery titanium compound such as TiC or TiN, a catalyst such as platinum black or iridium black and a binder such as PVA. The electrodes 3a and 3b may be mesh-shaped or comb-shaped. The electrodes 3a and 3b are formed by applying a conductive paste containing conductive powders onto the surfaces of the anion permeable membrane 2, followed by heating or pressurization.

Various embodiments provide a semiconductor structure having a common gate and fabrication method of the semiconductor structure. In an exemplary method, after forming a first metal gate and a second metal gate, a conductive material layer can be formed at least at the boundary between the first metal gate and the second metal gate. Thus, one end of the conductive material layer can be connected to a first metal gate electrode, and the other end of the conductive material layer can be connected to a second metal gate electrode. The resistance between the first metal gate electrode and the second metal gate electrode can be effectively reduced. Gate voltages of an NMOS transistor and a PMOS transistor of the common gate can be the same.

A display device includes a substrate, and a light-emitting element which is provided on one side of the substrate. A pixel circuit is provided on the side of the substrate, and has at least one electrode to drive the light-emitting element. An interconnection is provided on the side of substrate, is electrically connected to the pixel circuit and has a conductive layer different from the electrode of the pixel circuit.

The semiconductor memory device includes: an interlayer insulating film that is formed on a semiconductor substrate; an insulating film that is formed on the interlayer insulating film and has a cylinder hole; and a capacitor that has an impurity-containing silicon film, a lower metal electrode, a capacitive insulating film and an upper electrode, which are formed so as to cover a bottom and a side of the cylinder hole, wherein the cylinder hole extends through the insulating film so as to expose an end side of the contact plug, the end side facing opposite from the source electrode; and the impurity-containing silicon film has a silicide layer near an interface between the impurity-containing silicon film and the lower metal electrode, the silicide layer being produced by a reaction of impurity-containing silicon included in the impurity-containing silicon film with metal included in the lower metal electrode.

In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.

A method for manufacturing a board assembly comprises the steps of: tin-plating a first terminal and a copper-made second terminal that are formed on a circuit board; mounting an electronic component on the circuit board by means of gold-tin eutectic bonding between a gold electrode of the electronic component and the tin-plated first terminal; forming a copper-tin alloy on a surface of the second terminal by heating the circuit board after the mounting step; and bonding the second terminal having the copper-tin alloy formed on its surface to a terminal of another board by means of a thermosetting conductive adhesive.

A method for manufacturing a terminal-attached electric wire including an electric wire including a core wire having plurality of strand wires, and a female terminal including wire barrels crimped around the core wire. The method includes a first step of applying ultrasonic vibrations to the core wire, and a second step of crimping the wire barrels in a region of the core wire to which ultrasonic vibrations have been applied. The first step includes applying ultrasonic vibrations to the core wire while leaving a compression margin for the crimping by the second step such that the resistance between the electric wire and the female terminal is stabilized until the strand wires of the terminal-attached electric wire are severed when the core wire of the terminal-attached electric wire is further compressed after the second step.

The resistance welding method of welding two objects together includes the steps of: clamping the objects between a pair of electrodes; and applying a current between the electrodes while the objects are pressed to bring them close to each other to allow a contacting surface between them to generate heat. One object includes a core member and a plated layer coating the core member and having a melting point lower than that of a metal constituting an outer surface of the core member. The objects are clamped between the electrodes and the contacting surface are allowed to generate heat to melt the plated layer to weld the outer surface of the core member of the one object and a base member of another object together. At least the outer surface of the core member and the base member are made of respective metals, between which no intermetallic compound is formed.

A disconnect switch (30, 30SA) is placed in circuit between a battery bank (12) and a distribution point (30B) for the entire electrical system load except the engine cranking motor (24). This allows the circuit between the battery bank and a cranking motor solenoid (22) that operates the cranking motor to be switch-free. A switch-free circuit allows a continuous cable to connect the battery bank to the cranking motor solenoid, significantly reducing the electrical resistance between the battery bank and the cranking motor solenoid.

A mail stacker unit in a postal sorting machine includes a stacking actuator (22) driven in stop-start rotation for the purpose of stacking mailpieces on edge in a storage receptacle. The actuator is coupled in rotation to a clutch brake (34) driven at constant speed, and elliptical gearing (30, 31) is also provided between the clutch brake and said stacking actuator.

A system and method for optimizing performance of an aircraft or boat through detection and trending of engine deterioration based on the performance of the vehicle's gas turbine. The system and method detects declines in engine power due to either of in-transit events or over the extended lifetime of the engine, the declines being due to routine engine part aging or an event. As engine power gradually or suddenly deteriorates, the system and method lowers a maximum operating line which defines the safe limits for peak engine power consumption during flight. For in-transit events, the system and method detects when actual power consumption is approaching the current maximum operating line. The controller may then automate changes to operations of entirely separate aircraft systems, such as rebalancing electrical energy consumption by various non-engine elements of the aircraft.

A battery, a battery pack for the battery, and a busbar for connecting battery cells, the busbar having an electrically conductive metal sheet and having at least one sheet metal connector piece, which is incorporated into the metal sheet with the aid of a cutting method and which protrudes from the metal sheet; the sheet metal connector piece has a contacting part for electrically connecting to a pole of the battery cell and a safety part embodied in the form of a fuse. In order to create a busbar that is durable and simply designed and nevertheless has a high degree of fire safety, it is proposed that the safety part be embodied in the form of a coiled helical spring.

A laminated flat electric wire includes four or more rectangular plate-shaped flat electric wires. The flat electric wires are laminated, and each of the flat electric wires has tabs extending from each of the flat electric wires, one tab being provided at each of a first end portion and a second end portion. In a plan view as viewed in a direction along a lamination direction of the flat electric wires, the tabs of the respective flat electric wires are provided so as not to overlap each other at each of the first end portion and the second end portion, and the flat electric wire having the tab provided outermost along a width direction of the flat electric wire, among the respective tabs provided at the first end portions, has, at the second end portion, the tab provided at a position interposed between the tabs of other flat electric wires.

Systems and methods for generating hydrogen by electrolysis of water from a volatile power source may facilitate adjusting the operating capacity of an electrolysis stack based on measurements of the electricity output of the power source. In various embodiments, capacity adjustment is achieved by incorporating fewer or more cells of the electrolysis stack into a closed electrical circuit including the incorporated cells in series with the power source.

An electrode in a battery, e.g., a lithium-ion battery, has an electrically conductive carrier foil including (i) a terminal region for connection to an electrical circuit and (ii) at least one electrically conductive structure element configured to reduce the electrical resistance between the terminal region and a point on the carrier foil in order to improve electrical collection via the terminal region.

An integrated circuit assembly which includes stacked printed ceramic substrate layers, and incorporates a shielding enclosure extending about the electrical conductor traces and interconnects which form the assembly circuitry. The shielding enclosure is configured to reduce electric and / or magnetic field leakage or interference with the traces and interconnects. The enclosure is provided as a cage about the assembly circuitry, and which is formed as arrays of ground conductors in electrical communication with ground plates.

A low-voltage contactor with an actuating unit, a stationary contact, and a contact carrier operated by the actuating unit and including a movable contact, a spring with a first end and a second end acting on the movable contact to produce a force that reduces the electrical resistance between the contacts, and a connecting means for connecting the contact carrier to the actuating unit. The contact carrier includes a framework part including the connecting means, a holder part including a holding member adapted to receive and hold the movable contact and the spring. The holder part and the framework part are detachably connected to each other and designed so that the first end of the spring is acting on the movable contact held by the holder part and the second end is acting on the framework part when the framework part and the holder part are connected to each other.

A battery system includes battery cells, metal plates, and welding rings. The battery cell includes terminal rods. The battery cells are connected to each other through the metal plates. The welding rings are arranged on the metal plates, and have insertion holes into which the terminal rods are inserted. The surface of the insertion hole is welded to the terminal rod. The periphery of the welding ring is welded to the metal plate after the terminal rod is inserted into the insertion hole. The terminal rods are electrically connected to the metal plates through the welding rings. The terminal rod and / or the welding ring includes a stopper that temporarily holds the welding ring at a predetermined position with the welding ring being connected to the terminal rod. The temporarily held position is the position where the periphery of the welding ring is in contact with the metal plate.

In a method of forming a wiring having a carbon nanotube, a lower wiring is formed on a substrate, and a catalyst layer is formed on the lower wiring. An insulating interlayer is formed on the substrate to cover the catalyst layer, and an opening is formed through the insulating interlayer to expose an upper face of the catalyst layer. A carbon nanotube wiring is formed in the opening, and an upper wiring is formed on the carbon nanotube wiring and the insulating interlayer to be electrically connected to the carbon nanotube wiring. A thermal stress is generated between the carbon nanotube wiring and the upper wiring to produce a dielectric breakdown of a native oxide layer formed on a surface of the carbon nanotube wiring. A wiring having a reduced electrical resistance between the carbon nanotube wiring and the upper wiring may be obtained.

Various embodiments provide a semiconductor structure having a common gate and fabrication method of the semiconductor structure. In an exemplary method, after forming a first metal gate and a second metal gate, a conductive material layer can be formed at least at the boundary between the first metal gate and the second metal gate. Thus, one end of the conductive material layer can be connected to a first metal gate electrode, and the other end of the conductive material layer can be connected to a second metal gate electrode. The resistance between the first metal gate electrode and the second metal gate electrode can be effectively reduced. Gate voltages of an NMOS transistor and a PMOS transistor of the common gate can be the same.

A membrane electrode assembly includes a fluorine-based ion exchange resin membrane, a diffusion layer and a catalyst layer that supports a battery reaction. The catalyst layer is formed from Pt-carrying carbon nanotubes that is oriented on the fluorine-based ion exchange resin membrane, and non-Pt-carrying carbon nanotubes that is oriented on the diffusion layer.

A display device includes a base substrate, a buffer layer disposed on the base substrate, an active layer disposed on the buffer layer, a first gate insulation layer disposed on the active layer, a first conductive layer disposed on the first gate insulation layer and which is a single-layer including an aluminum alloy, a second gate insulation layer disposed on the first conductive layer, a second conductive layer disposed on the second gate insulation layer and which is a single-layer including an aluminum alloy, an insulation interlayer disposed on the second conductive layer, and a third conductive layer disposed on the insulation interlayer, directly contacting the first conductive layer through a first gate contact hole defined in the insulation interlayer and the second gate insulation layer, and directly contacting the second conductive layer through a second gate contact hole defined in the insulation interlayer.

A sensor includes: a substrate on which an active chip including a semiconductor circuit is disposed; and a passive chip including an acceleration sensor, and a thick portion and a thin portion, the thick portion being disposed on the substrate so as to be in contact therewith. An active chip terminal is disposed on the active chip. A passive chip terminal is disposed on the passive chip at the thin portion. The passive chip terminal and the active chip terminal face each other and are connected via a bump.