30results about How to "Adjust capacitance" patented technology

As wireless communication technology evolves, various transceivers become integrated into a single system, which implements a seamless connection to search available frequency bands and to provide wireless connections regardless of their wireless standards. One of the key technologies for seamless implementation is an ultra-wideband local oscillator, which can overcome the restriction of limited tuning range in typical RF local oscillators. Many RF oscillators incorporate LC-tuned oscillators because of their good noise performance while their tuning range is limited by fixed inductance and varied capacitance. The planar inductor fabricated on the CMOS process occupies a large area as well. By replacing the planar inductor with the array of bondwires, and including switches to provide proper impedance for the circuit to generate negative impedance, the tuning range of a CMOS voltage-controlled oscillator (VCO) is extended more than 100%, which number can not be achieved in a convention VCO.

According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor.

This invention relates to a surface-pasted broadband microwave single layer sheet condenser including a single layer ceramic medium, an up electrode and a down electrode, in which, said up electrode and down electrode are adhered on the two opposite surfaces of the ceramic medium characterizing that said down electrode is divided into two and an electrode clearance is remained between them and a method is also disclosed.

The capacitance of a capacitor is adjusted by forming openings in one of a pair of electrodes of the capacitor, the openings having different sizes d1, d2, d3, wherein d1>d2>d3> . . . and being arranged in numbers n1, n2, n3, . . . , respectively; and sequentially filling a necessary number of the openings with an electroconductive material in descending order of the size so as to adjust the capacitance gradually with an increasing degree of precision. The resulting capacitor is mounted to a printed wiring board.

The invention discloses a device and method for reducing the capacitor temperature coefficient, and the device comprises an enclosed space which consists of a capacitor upper cover, a capacitor housing and a capacitor lower cover, and the interior of the enclosed space is provided with a fixed cover, a capacitor core, a fixed plate, a core pedestal, a support plate, a support spring, a push plate, and an expander. According to the invention, the polar plate spacing of each capacitor element in the capacitor core is compressed or amplified by changing the height (namely the core compaction coefficient) of the capacitor core, so that the adjustment of the capacitance of the core is realized, and the temperature coefficient of the capacitor is automatically reduced.

A pixel structure including an active device, a common line pattern, a protective layer, a pixel electrode, and a patterned semiconductor layer is provided. The active device is disposed on a substrate. In addition, the common line pattern is disposed on the substrate and covered with an insulation layer. The protective layer covers the active device and a part of the insulation layer. The protective layer has a contact window exposing the active device. The pixel electrode is disposed on the protective layer and electrically connected to the active device through the contact window. The patterned semiconductor layer is disposed on the insulation layer above the common line pattern. The patterned semiconductor layer is located between the common line pattern and the pixel electrode.

A solid state imaging device includes: two or more output units, the output unit including a charge/voltage conversion unit adapted to convert signal charges into an electric signal and an output circuit unit adapted to output the electric signal converted by the charge/voltage conversion unit; and a variable capacitor connected to a wiring, the wiring interconnecting the charge/voltage conversion unit and the output circuit unit.

A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer and including a contact area hole corresponding to the first independent platform, coated onto the metal layer at the protective layer and coupled to the first independent platform, and extended to the second independent platform to form a pad for wire bonding the first independent platform. The independent platforms define the second independent platform for wire bonding, and its capacitance is modulated to provide a stronger wire bonding strength, and the dielectric layer filled at the external sides of the two platforms lowers the wire connected metal capacitance and obtain a planarized surface for producing the metal layer easily.

The invention relates to a radio frequency circuit and an antenna tuning circuit. The radio frequency circuit comprises a radio frequency transceiver, a voltage regulating circuit, an inductor and anadjustable capacitor. The first end of the inductor is electrically connected with the first output end of the radio frequency transceiver, and the input end of the voltage regulating circuit is electrically connected with the second output end of the radio frequency transceiver and used for controlling the voltage regulating circuit to work. The first end of the adjustable capacitor is electrically connected with the second end of the inductor and the output end of the voltage adjusting circuit, and the second end of the adjustable capacitor is grounded. According to the radio frequency circuit provided by the embodiment of the invention, the capacitor and the inductor do not need to be replaced again when radio frequency burrs are eliminated, the technical problem of low elimination efficiency of the existing radio frequency circuit for the radio frequency burrs is solved, and the technical effect of improving the elimination efficiency of the radio frequency circuit for the radio frequency burrs is achieved.

The present invention relates to a vacuum capacitor (1, 30) comprising an enclosure (9) to contain a vacuum dielectric medium, a first electrode (12) and a second electrode (13) separated by said vacuum dielectric medium, the enclosure (9) comprising a first conductive collar (2) in electrical contact with the first electrode (12) and a second conductive collar (3) in electrical contact with the second electrode (13), the first conductive collar (2) and the second conductive collar (3) being separated by an insulating element (4) of the enclosure (9), wherein the enclosure (9) exhibits at least one protruding edge (6), said protruding edge (6) being in electrical contact with the closest of the first conductive collar (2) or the second conductive collar (3), wherein the vacuum capacitor (1, 30) comprises at least one protection means (7, 37) covering on the outside of the vacuum enclosure the protruding edge (6), wherein the protection means (7, 37) is made at least partially of an elastomer, wherein at least the outer surface (7b, 37b) of the protection means (7, 37) is electrically conductive and is at the same electrical potential as the closest conductive collar to the protruding edge (6), and wherein the outer surface (7b, 37b) of the protection means (7, 37) has a radius of curvature greater than the radius of curvature of the protruding edge (6).

The invention discloses a capacity-adjustable double-electric-layer capacitor, which comprises a packaging shell, a sealing cover, an electrode group, an air bag group, a pump body, a plunger and an adjusting screw rod, the sealing cover and the packaging shell form a closed electrolyte cavity, and the electrolyte cavity is filled with electrolyte; the two electrode groups are arranged in the electrolyte cavity side by side at intervals, each electrode group comprises an electrode body, each electrode body is provided with a lead, each electrode body is provided with a collector plate, the lead penetrates through the sealing cover and then extends out, and the surface of each collector plate is coated with a carbon electrode coating; the air bag group is arranged at the inner bottom of the packaging shell and is provided with an air inlet hole; the pump body is fixed to the bottom face of the sealing cover, and an exhaust hole is formed in the bottom of the pump body and communicated with the air inlet through a connecting pipe. The plunger is arranged in the pump body; the adjusting screw rod is rotationally connected to the sealing cover, and the lower end of the adjusting screw rod extends into the pump body and then is in threaded sleeve connection with the plunger; according to the invention, the capacitance can be adjusted, the charging time can be reduced, and the diversified requirements on the capacitance are met.