The invention discloses a GaAs-based LED
chip cutting method. The method comprises the following steps: (1) semi-
cutting is carried out on a P surface, criss-
cross cutting grooves are formed, and
chip P surface electrodes are separated at equal intervals; (2) the
chip P electrodes face a white film downwardly, N electrodes face upwardly and are attached to the white film; (3) chip N surface scribing is carried out along the
cutting grooves formed by P surface semi-cutting, and chip N
surface stress is relieved; (4) film inverting is carried out on the scribed chip, and the chip is transferred to a blue film from the white film; and (5) on the chip N surface, a bonding tool of a chip breaking
machine is used for chip breaking along scratches, and the chip is processed into independent
crystal grains. The improved surface
mount method is used, a cutting method which combines advantages of a chip sawing
machine and a
laser chip scribing
machine is adopted, the chip P
surface stress and the N
surface stress are relieved maximally, deformation
stress effects caused by film laminating can be reduced and edge collapse and
pipe core breaking phenomena after the chip is
cut are reduced, and the appearance quality after the chip is
cut is improved.