39 results about "Piezoelectric potential" patented technology

A plasma processing system for use with a gas. The plasma processing system comprises a first electrode, a second electrode, a gas input port, a power source and a passive circuit. The gas input port is operable to provide the gas between the first electrode and the second electrode. The power source is operable to ignite plasma from the gas between the first electrode and the second electrode. The passive circuit is coupled to the second electrode and is configured to adjust one or more of an impedance, a voltage potential, and a DC bias potential of the second electrode. The passive radio frequency circuit comprises a capacitor arranged in parallel with an inductor.

A self-powered generator is provided. The generator includes a piezoelectric nanorod member layer that includes a first layer; a second layer; and a plurality of piezoelectric nanorods disposed between the first and second layers. The piezoelectric nanorod is a biaxially-grown nanorod. When mechanical energy is applied from an outside, an upper half and a lower half of each of the plurality of piezoelectric nanorods generate piezoelectric potentials having opposite polarities, the upper half and the lower half being on both sides of a longitudinal axis along an axis perpendicular to the longitudinal axis.

The invention provides a transistor which comprises a piezoelectric crystal, a first electrode and a second electrode. The first electrode and the second electrode are oppositely arranged at the two ends of the piezoelectric crystal respectively. The first electrode and / or the second electrode are / is used for exerting strain or stress on the piezoelectric crystal. Materials of the piezoelectric crystal have the piezoelectric effect under the action of the strain or the stress. Correspondingly, the invention further provides a transistor array. Strain or stress or pressure is exerted on the electrode of one end of the piezoelectric crystal, so that the piezoelectric crystal correspondingly deforms, the interface barrier between the piezoelectric crystal materials and electrode materials can be effectively regulated by generated piezoelectric potential, and the function similar to grid voltage in a field effect transistor is achieved. The transistor or the transistor array can be applied to the fields of micro-nano electromechanical systems, nano-robots, human-computer interaction interfaces, flexible sensors and the like.

The invention discloses a power module, an electric control box, and an air conditioner. The power module comprises a substrate, a wiring board and a transistor welded on the wiring board, wherein thesubstrate, the wiring board and the transistor are sequentially disposed from the bottom to the top. A potential measurement region which is exactly opposite to the transistor is disposed between thesubstrate and the wiring board. The power module also comprises a piezoelectric potential measurement module located in the potential measurement region, and the piezoelectric potential measurement module comprises a plurality of potential measurement units which are arranged at intervals. Each potential measurement unit comprises a piezoelectric image unit, a first electrode piece and a second electrode piece, wherein the first electrode piece and the second electrode piece are respectively disposed at two ends of the potential measurement unit and are electrically connected with the potential measurement unit, the first electrode piece is connected with a first pin, and the second electrode piece is connected with a second pin. The power module provided by the invention can reduce the difficulty of a welding hole detection test of the power module so that a user carries out the operation of the welding hole detection test.

The invention discloses a cantilever beam-type composite nano generator, which comprises a first cantilever beam, a second cantilever beam and a piezoelectric power generation assembly (50), wherein the first cantilever beam can elastically vibrate and comprises a first friction power generation assembly; the second cantilever beam can elastically vibrate and is used for being horizontally contacted with the first cantilever beam when at rest; the second cantilever beam comprises a second friction power generation assembly and is used for being contacted with or separated from the first friction power generation assembly during a vibration process, and during the contact and separation process, a friction potential difference is generated between the first friction power generation assembly and the second friction power generation assembly; and the piezoelectric power generation assembly (50) is arranged on the first cantilever beam and / or the second cantilever beam for generating stretching and / or compression deformation during the vibration process, and a piezoelectric potential difference is generated in the piezoelectric power generation assembly. According to the cantilever beam-type composite nano generator, through vibration between the first cantilever beam and the second cantilever beam, friction electric signals and piezoelectric electric signals are generated, and the energy conversion efficiency can be improved.

The invention relates to a heat extraction assembly (20) for a semiconductor power module, comprising three stacked joint partners (24, 26, 28) integrally bonded together by a first solder layer (22A)and by a second solder layer (22B), and a corresponding semiconductor power module comprising at least one of these heat extraction assemblies (20) and a method for bonding a layer stack consisting of three joining partners (24, 26, 28) in such a heat extraction assembly (20). The first solder layer (22A) is formed between a first, electroconducting joining partner (24) and a central, electrically insulating joining partner (26), and the second solder layer (22B) is formed between the central, electrically insulating joining partner (26) and a second, electroconducting joining partner (28), wherein the first joining partner (24) is a first conducting track (24A) from which heat is to be extracted and to which a first voltage potential is applied, the second joining partner (28) is a second conducting track (28A) that acts as a heat sink and to which a second voltage potential different from the first voltage potential is applied, and the central joining partner (26) is an electricallyinsulating intermediate layer (26A) that forms an electrically insulated heat-dissipation path between the first joining partner (24) and the second joining partner (28).