63 results about "Molecular memory" patented technology

DNA is a natural molecular level storage device. Molecular storage devices use each molecule or part of it for storing a character. Thus it is possible to store information million of times than presently used storage devices. For example a JPEG image (i.e. flag of India) having file size of 1981 Bytes can be encrypted using 7924 DNA bases which occupies about 2694.16 nanometers In other words flag of India can be encrypted 8.07×105 times in human genome which comprises 6.4×109 DNA bases and occupy a tiny volume of about 0.02 μm3. A method for storing information in DNA has been developed which includes software and a set of schemes to encrypt, store and decrypt information in terms of DNA bases. The main advantages of the present method over exiting art is that it addresses complete set of extended ASCII characters set and thereby, encryption of all kind of digital information (text, image, audio etc.). First of all, information is, encrypted along with carefully designed sequences known as header and tail primers at both the ends of actual encrypted information. This encrypted sequence is then synthesized and mixed up with the enormous complex denatured DNA strands of genomic DNA of human or other organism.

A molecular memory element comprising a switching device; at least a first bit line and a first word line coupled to said switching device; and an array of storage locations, each coupled to a bit line and a word line, said elements comprising a first electrode with storage molecules comprising redox active molecules, and said array comprising a second electrode.

This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g. a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.

This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g., a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits / cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.

A method of making a bacteriochlorin is carried out by condensing a pair of compounds of Formula II to produce the bacteriochlorin, wherein R is an acetal or aldehyde group. The condensing may be carried out in an organic solvent, preferably in the presence of an acid. The bacteriochlorins are useful for a variety of purposes such as active agents in photodynamic therapy, luminescent compounds in flow cytometry, solar cells, light harvesting arrays, and molecular memory devices.

A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

A molecular memory cell includes first and second electrodes. First and second charge storage molecules have respective first and second oxidation potentials and are disposed between the first and second electrodes. A molecular linkage couples the first and second charge storage molecules to the first electrode and provides respective first and second electron transfer rates for the first and second charge storage molecules. The first and second different oxidation potentials are different and / or the first and second electron transfer rates are different. In particular, the second oxidation potential may be greater than the first oxidation potential and the first electron transfer rate may be greater than the second electron transfer rate, such that the first charge storage molecule may be used as fast, volatile primary memory and the second charge storage molecule can be used as slower, less volatile secondary memory. In various embodiments, memory cells can be constructed from an admixture of charge storage molecules or by using a bipartite charge storage molecule. Memory cells can include a molecular transistor incorporating such molecular structures.

A molecular memory media having a media surface and a platform with read / write heads. The platform and media are moved to allow one of addition, removal, and repositioning of atoms, electrons, and charges on a surface of the media. The media is a material capable of storing data written to it, and detectable using a vibrating tip sensor that resonates at a free space value which is phase shifted when charges or anomalies on a surface of the media are present. Other methods of reading and writing to the media are presented. The media may be enhanced by augmenting grain boundaries of the media vis deposition and removal of PMMA materials. Servo trenches and sync bits identify positions of the read / write heads and maintain alignment during memory operations.

A novel memory cell is provided with an active region including a molecular system and ionic complexes distributed in the molecular system. A pair of write electrodes are arranged for writing information to the memory cell. The active region is responsive to an electric field applied between the pair of write electrodes for switching between an on state and an off state. The active region has a high impedance in the off state and a low impedance in the on state. A pair of read electrodes is used to detect whether the active region is in the on state or in the off state to read the information from the memory cell. Read electrodes may be made of different materials having different work functions to reduce leakage current.

A memory cell is provided with a pair of electrodes, and an active layer sandwiched between the electrodes and including a molecular system and ionic complexes distributed in the molecular system. The active layer having a high-impedance state and a low-impedance state switches from the high-impedance state to the low-impedance state when an amplitude of a writing signal exceeds a writing threshold level, to enable writing information into the memory cell. The active layer switches from the low-impedance state to the high-impedance state when an amplitude of an erasing signal having opposite polarity with respect to the writing signal exceeds an erasing threshold level, to enable erasing information from the memory cell.

The present invention provides an article of manufacture formed from a substrate and a benzazoloporphyrazine bound to the substrate. The article may take a variety of different forms and may be for example an electrochromic display, a molecular capacitor, a battery, a solar cell, or a molecular memory device. Methods of making such articles, along with compounds, methods and intermediates useful for making such benzazoloporphyrazines, are also described.

The invention provides two-dimensional Fe(II) complex pressure-caused spin conversion materials, a preparation method and application thereof. The invention relates to the field of spin conversion materials science, in particular to pressure-caused spin conversion materials, a preparation method and application thereof. The chemical formula of the two-dimensional Fe(II) complex pressure-caused spin conversion materials is [Fe(L)2(SCN)2]n, wherein L is 1,3-Bis (1H-1,2,4-triazol-1-ylmethyl)-2,4,6-trimethylbenzene ligand. The preparation method chooses L as the ligand to synthesize the two-dimensional Fe(II) complex pressure-caused spin conversion materials. The materials are free from the phenomenon of spin conversion under normal pressure; the results of temperature-change magnetic susceptibility show that antiferromagnetic interaction exists between Fe and Fe; and after pressure is increased, the results of temperature-change magnetic susceptibility show that the phenomenon of spin conversion appears, and the temperature of spin conversion changes from low to high with the increase in pressure, so the temperature of spin conversion can be regulated by regulating external pressure. Therefore, the materials have good application prospects in the fields of nanometer devices, molecular memory, molecular switches and molecule display, as well as industry.

The present invention provides dipyrrin substituted porphyrinic macrocycles, intermediates useful for making the same, and methods of making the same. Such compounds may be used for purposes including the making of molecular memory devices, solar cells and light harvesting arrays.

A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

Disclosed are a compound which works as electronic materials such as a molecular memory, a molecular switch, a molecular rectifier, a molecular wire, and so on, and a molecular electronic device including the same. The compound for molecular electronic device has the structure of following Formula 1, (MnRM)n  <Formula 1>wherein, R is a single molecule having an electrical conductivity, M is independently a repeating unit constituting a polymer having an electrical conductivity, and n is independently an integer ranging from 100 to 500.

The invention generally encompasses methods of forming thin films molecular based devices, and devices formed therefrom. Some embodiments relate to molecular memory cells, molecular memory arrays, electronic devices including molecular memory, and processing systems and methods for producing molecular memories. More particularly, the present invention encompasses methods and molecular based devices comprising a wetting layer and redox-active molecules.

The invention, which belongs to the technical field of organic electronics and information, discloses an organic field-effect transistor memory based on nano lattice molecules and a preparation methodthereof. The memory comprises source / drain electrodes, an organic semiconductor layer, a nano lattice molecular storage layer, a gate insulating layer, a substrate, and a gate electrode formed on thesubstrate, wherein the parts are arranged from top to bottom successively. According to the invention, the provided memory being a typical charge trapping / releasing mechanism has advantages of high charge maintaining stability, high tolerance, large storage window and large storage density, high flexibility, large area, and low process cost by being compared with the polymer electret memory and floating gate type memory. According to the invention, the memory is prepared by using the simple process; and the storage capacity, switching speed and stability of the memory are greatly improved. Moreover, the device preparation cost is lowered. Therefore, the memory is convenient to popularize and apply.

A nano-class composite high-molecular memory material is prepared from linear low-density polyethene, nano-class, metal oxides, inorganic nanoparticles, and assistant through mixing and cross-linking. Its contains LLDPE, EVA, CPE, EPR, silicone rubber, nano calcium carbonate, nano aluminium hydroxide, nano iron oxide, nano TiO2, nano zinc oxide, nano SiO2, carbon black, flame retardant FR-E, antioxidant 1010, and zinc stearate. Its advantages are high break-through voltage (more than 10KV) and good flexiblity.

A molecular memory cell and methods for forming a molecular memory cell, which allow for easy and inexpensive manufacturing and flexibility in memory system design. Embodiments include a non-volatile molecular memory cell, comprising: a substrate having a conductor, a superionic conductor, a polymer layer over said superionic conductor, a layer of metal ions formed from the superionic conductor and residing between said polymer layer and said superionic conductor, and a second conductor over the polymer layer. Other embodiments include methods for forming a molecular memory cell, wherein a superionic conductor is deposited over a suitable substrate having conductor. A polymeric film is then deposited over the superionic conductor via a living polymerization reaction initiated by the superionic conductor. Furthermore, a layer of excess metal ions from the superionic conductor forms on an upper surface of the superionic conductor. A top conductor is then formed on the polymeric film.

A method of making a compound of Formula I′comprises reacting a compound of the formula DLCHO, with a compound of the formula to produce the compound of Formula I′. Methods of using the compounds are also described, particularly as intermediates for the synthesis of porphyrin rods, which porphyrin rods are in turn useful for (among other things) the production of molecular memory devices.

A medical paster for externally fixing the memory material and adhesive dressing in order to improve the respiratory function of lung and prevent complications is composed of an adhesive film paster, a dressing bag stuck on the central position of said film, a high-molecular memory material in said dressing bag, and a parting paper in the hollow square shape for surrounding said dressing bag. Its usage method is also disclosed.

A method of making a bacteriochlorin is carried out by condensing a pair of compounds of Formula IIto produce the bacteriochlorin, wherein R is an acetal or aldehyde group. The condensing may be carried out in an organic solvent, preferably in the presence of an acid. The bacteriochlorins are useful for a variety of purposes such as active agents in photodynamic therapy, luminescent compounds in flow cytometry, solar cells, light harvesting arrays, and molecular memory devices.

Compositions and methods for the storage, organization, access, and retrieval of information encoded by sequence controlled polymers such as data storage nucleic acids are provided. In some embodiments, organization, storage, and / or selective retrieval of the data is facilitated by hybridization of barcode sequence of the sequence controlled polymer to the reverse complementary sequence of an oligonucleotide. The plurality of oligonucleotides can be arrayed using a known organization scheme, and selectively capture and localize the corresponding sequence controlled polymer. In some embodiments, the compositions and methods utilize recombinant bacteriophage, typically featuring a minigenome having a bacteriophage origin of replication and packaging signal separated from a data storage sequence by barcodes.

The subject matter of the invention is an electroconducting nanowire, comprising an amyloid fibre which results from the self-assembling of peptides comprising a prion domain or a derivative of this domain and which is functionalized by electron transporting peptides, each comprising amino acids bound to one or more atoms of iron.Its subject matter is also a method of manufacturing this nanowire as well as the uses of said nanowire.Uses: manufacture of sensors for the detection of chemical or biological species, of nano-batteries, of radio-identification systems, of molecular memory systems, etc.

The invention relates to a novel nanoscale high molecular memory material and a preparation method thereof. The preparation method comprises the following steps: preparation of paste: fully grinding rosin pentaerythritol ester, terpene resin, diethyl phthalate, N'-diphenyl p-phenylenediamine aluminum hydroxide, nano calcium carbonate, 4, 4'-dibenzoxyl sulfur hydrazine and N, N-dimethyl ethylamino ethylene glycol, hydrolyzing under an acidic or alkaline condition, then adding an SEPS (Styrene-Ethylene / Propylene / Styrene) thermoplastic elastomer and polyisoprene rubber, adding to above melting point, mixing and stirring till no macroscopic particles are founded, thus obtaining the paste; high-seed rotating centrifugation: cooling the paste to room temperature, carrying out high-seed rotating centrifugation in a centrifugal machine; vacuumizing and drying: vacuumizing and drying the centrifugalized paste; and curing: taking out the centrifuged and dried paste and curing the centrifuged and dried paste for 24 hours under a room temperature condition to obtain the nanoscale high molecular memory material.