Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device

a molecular memory and molecular structure technology, applied in the field of microelectronics and molecular electronics, can solve the problems of not being able to prepare sub-micron structures, not being able to provide a convenient method of regulating the relative surface area of the electrode exposed in the vial, and not being able to achieve large precisely arranged arrays of such vials. achieve the effect of preventing charge leakage and suitable mechanical properties

Inactive Publication Date: 2006-04-20
RGT UNIV OF CALIFORNIA
View PDF37 Cites 42 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patent describes a new type of electrochemical cell that is very small in size. The cell has a well with a cross-sectional area typically less than 1 μm by 1 μm, and the ratio of the surface area of the first electrode to the second electrode is at least about 2:1. The first electrode is made of copper, silver, chromium, or gold, and the second electrode is made of copper, silver, or aluminum. The electrodes can be made of conducting polymers, conducting nanotubes, or other materials. The cell can have a volume less than 100 femtoliters, and can be used to detect and measure the concentration of molecules in a solution. The cell can be formed on a substrate and can be addressed independently. The technical effects of this invention include the ability to create small, efficient, and highly sensitive electrochemical cells for use in various applications such as sensors and biological assays.

Problems solved by technology

Previous approaches, however, have not provided a convenient method of regulating the relative surface area of the electrodes exposed in the vials, have not been convenient for the fabrication of large precisely arranged arrays of such vials, or have not been feasible for the preparation of sub micron structures.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
  • Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device
  • Molehole embedded 3-D crossbar architecture used in electrochemical molecular memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0083] This invention pertains to the design and fabrication of a novel architecture that can be used for a molecular electrochemical memory device, a sensor, and a variety of other applications. The unique architecture is comprised, in certain embodiments, of two or more arrays of conductors (e.g., electrodes) arranged so that the conductors forming the cross or overlap each other. The conductors are typically separated by a dialectric layer. Within each intersection point of an upper and lower electrode (e.g., top and bottom interconnect) a well is fabricated. This well penetrates the electrodes, so that the electrodes form a portion of the side and / or bottom of the well.

[0084] Molecules (e.g., organic molecules) are attached to one or more of the exposed conductor surfaces in the wells. Each well can then function as an electrochemical cell permitting electrochemical measurements of the bound molecules or of other molecules attached to the bound molecules.

[0085] The fabrication...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
volumeaaaaaaaaaa
distanceaaaaaaaaaa
distanceaaaaaaaaaa
Login to View More

Abstract

This invention provides a new design and fabrication for a three-dimensional crossbar architecture embedding a sub-micron or nanometer sized hole (called a molehole) in each cross-region. Each molehole is an electrochemical cell consisting of two or more sectional surfaces separated by a non-conductor (e.g., a dialectric layer and solid electrolyte). When used in electrochemical molecular memory device (EMMD), the architecture provides unique features such as a nano-scale electroactive surface, no interaction between memory elements, and easier miniaturization and integration.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a Divisional of U.S. Ser. No. 10 / 046,499, filed on Oct. 26, 2001, which is incorporated herein in its entirety for all purposes.STATEMENT AS TO RIGHTS TO INVENTIONS MADE UNDER FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT [0002] This invention was made with Government support under Grant No: N00014-99-0357 awarded by the Office of Naval Research. The Government of the United States of America may have certain rights in this invention.FIELD OF THE INVENTION [0003] This invention pertains to the fields of microelectronics and molecular electronics. In particular this invention involves the design and fabrication of a novel architecture that can be used for a molecular electrochemical memory device or for a sensor array. BACKGROUND OF THE INVENTION [0004] There has been a great interest in the development of nanoliter to picoliter microvials in analytical chemistry. Arrays of vials containing nanoliter to picoliter volum...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L29/82H01L27/14H01L29/84C12N15/09G01N33/483G01N27/403G01N27/416G01N33/543G01N37/00G11C11/56G11C13/02H01L27/28H01L51/05H01M4/38H01M4/60H01M6/40H01M10/04
CPCG11C11/5664G11C13/0009G11C13/0014G11C13/0016G11C2213/77G01N27/3278H01M4/602H01M6/40H01M10/0436B82Y10/00G01N33/5438H01M4/38Y02E60/10Y02P70/50H01L29/82
Inventor KUHR, WERNER G.BOCIAN, DAVID F.LIU, ZHIMINGYASSERI, AMIR
Owner RGT UNIV OF CALIFORNIA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products