The invention discloses an N-channel
field effect transistor resistant to the single particle effect and a manufacturing method of the N-channel
field effect transistor. The N-channel
field effect transistor resistant to single particle effect comprises a
semiconductor substrate, an epitaxial layer, a source region, a drain region and a grid
electrode. A first
threshold voltage injection region is arranged between the source region and the drain region. The periphery of the drain region is provided with a deep
doping leakage region. A second
threshold voltage injection region is arranged between the deep
doping leakage region and the drain region. According to the N-channel
field effect transistor resistant to single particle effect and the manufacturing method of the N-channel
field effect transistor, a circle of the deep
doping leakage region surrounds the periphery of the drain region of a traditional N-channel
field effect transistor, and the additionally arranged deep doping leakage region can effectively assist the drain region in collecting
electric charge after single particle conducts incidence on the sensitive drain region and generates the funneling effect, so that quantity of
electric charge absorbed by the drain region and the absorbing time are reduced after the drain region is irradiated by the single particle, the single particle
transient current pulse time and peak are reduced, certain transient
voltage pulse generated by the single particle with the
linear energy transfer value in an
inverter chain, and
irradiation resistance of a device is improved.