31 results about "Compliant substrate" patented technology

High quality epitaxial layers of GaN can be grown overlying large silicon wafers (200) by forming an amorphous layer (210) on the substrate. The amorphous layer dissipates strain and permits the growth of a high quality GaN layer (208). Any lattice mismatch between the GaN layer and the underlying substrate is taken care of by the amorphous layer.

A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete protruded elements and lands completely surrounding them. Pressure is provided between the compliant substrate and the forming structure to conform the precursor web to the forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements completely surrounded by land areas.

A multi-well plate can be loaded with a range of compliant substrates. Commerically-available assays can be used to test cellular responses across a plate with shear modulus from 50 to 51200 Pascals. Cells can be grown in the plates, and can be manipulated and analyzed. Hydrogels can be attached to the bottom of a well. The plates can support the attachment and growth of different cell types and can be compatible with standard 96-well and 384-well plate assays. The mechanical properties of the hydrogels can be reproducible and stable to increase the shelf life of the substrate. The hydrogel can be compatible with growth of a variety of cell types, various attachment ligands such as collagen I, collagen IV, flbronectin, vitronectin, laminin, or RGD peptides and can be coupled to the gel surface.

System for establishing a surface shape. The system includes a compliant substrate including the surface and having a reverse side, and a plurality of discrete actuators engaging the reverse side and arranged in a selected pattern to control the surface shape as individual discrete activators are activated. It is preferred that the actuators have multiple discrete stable states of elongation. A particularly preferred embodiment uses actuators that are binary with two stable states of elongation.

A process for making an embossed web. A precursor web is provided between a forming structure and a compliant substrate. The forming structure has a plurality of discrete apertures or depressions. Pressure is provided between the compliant substrate and the forming structure to force the precursor web into the apertures or depressions of forming structure to form the embossed web. The resulting embossed web has a plurality of discrete extended elements.

The invention discloses a full-compliancy capacitance and resistance dual mode proximate sense transducer. The full-compliancy capacitance and resistance dual mode proximate sense transducer is characterized in that a capacitance type proximate sense transducer body and a resistance type proximate sense transducer body are arranged on a compliant substrate in a spaced mode, and the capacitance type proximate sense transducer body and the resistance type proximate sense transducer body cooperate to perceive object proximity information in a segmented mode. According to the full-compliancy capacitance and resistance dual mode proximate sense transducer, the capacitance and resistance dual mode is utilized to cooperatively detect the object proximity information in a segmented mode, and therefore the accuracy of the transducer can be improved; all structures of the transducer have the compliancy, all leads are led to the same compliant substrate, and therefore the problems that the leads are tedious, not beautiful and not easy to maintain during array structure design are solved.

A gallium nitride based compound semiconductor device including a compliant substrate having a reduced stress and a method for manufacturing the same are disclosed. The compliant substrate included in the gallium nitride based compound semiconductor device is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH3 gas to form a nitride based thin film on the wafer.

The invention relates to a technical field for making a zinc oxide epitaxial film in semiconductor material and discloses silicon-based covariant substrate material used for growing the zinc oxide epitaxial film, which comprises a silicon single crystal substrate used for supporting the whole silicon-based covariant substrate material; a thin metal hafnium covariant layer; the thin metal hafnium covariant layer is made on the silicon single crystal substrate used for coordinating misfit strain for the zinc oxide epitaxial film which epitaxial grows on the silicon single crystal substrate. By adopting the invention, the misfit strain of the zinc oxide epitaxial film grown on the silicon substrate is coordinated and residual stress is decreased thereby enhancing the crystal quality and improving the appearance of the surface, which lays a foundation for developing silicon based photoelectric devices.