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Silicon based compliant substrate material possessing thin hafnium nitride compliant layer

A substrate material, hafnium nitride technology, applied in lasers, electrical components, circuits, etc., to achieve the effect of reducing residual stress, good crystal quality, and avoiding impurity pollution problems

Inactive Publication Date: 2008-07-02
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are two reasons for the analysis. On the one hand, the development of the preparation and growth technology of ZnO epitaxial thin film is still in development. On the other hand, there is no more suitable covariable layer that meets the basic conditions of the ideal covariable intermediate layer.

Method used

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  • Silicon based compliant substrate material possessing thin hafnium nitride compliant layer
  • Silicon based compliant substrate material possessing thin hafnium nitride compliant layer
  • Silicon based compliant substrate material possessing thin hafnium nitride compliant layer

Examples

Experimental program
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Effect test

Embodiment 1

[0056] Using ion beam epitaxy, a 90nm thick and 45nm thick covariable hafnium nitride layer (samples E1 and F1) 2 was prepared and grown on a Si(111) substrate 1, forming two covariable layers with different thicknesses. The silicon base of the layer can be a co-variable substrate.

[0057] by figure 2 In (a) X-ray diffraction (XRD) and (b) atomic force surface topography test (AFM) test analysis results, it can be seen that the two thicknesses of thin hafnium nitride covariable layer 2 have cubic HfN (111 ) With a single preferred orientation, the surface is relatively smooth and flat. The root-mean-square roughness values ​​of the AFM surface are 0.78nm and 1.08nm, respectively.

[0058] The same thickness of zinc oxide epitaxial film 3 is prepared by using the same magnetron sputtering process on these two kinds of silicon-based covariable substrates and ordinary Si(111) substrates.

[0059] by image 3 In (a) X-ray diffraction (XRD) test and analysis results can be seen: the ...

Embodiment 2

[0062] Using the ion beam epitaxy method, the 90nm thick and 18nm thick thin covariable hafnium nitride layers (samples E1 and F1) 2 grown on the Si (100) substrate 1 are formed, forming two coordinable layers with different thicknesses. The silicon-based variable layer can be a co-variable substrate.

[0063] by Figure 4 In (a) X-ray diffraction (XRD) and (b) atomic force surface topography test (AFM) test analysis results, it can be seen that the two thicknesses of thin hafnium nitride covariable layer 2 have cubic HfN (111 ) With a single preferred orientation, the surface is relatively smooth and flat. The root mean square roughness value of the G2 sample AFM is 0.20nm.

[0064] The same thickness of zinc oxide epitaxial film 3 is prepared by using the same magnetron sputtering process on these two kinds of silicon-based covariable substrates and ordinary Si(100) substrates.

[0065] by Figure 5 In (a) X-ray diffraction (XRD) test analysis results can be seen: the crystalline...

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Abstract

The invention relates to the technical field of epitaxial film preparation of zinc oxide of semiconductor materials and discloses a silicon-based compliant substrate material with thin hafnium nitride compliant layer. The material includes the following components: a single crystal silicon substrate which is used for supporting the whole silicon-based compliant substrate material; a thin hafnium nitride compliant layer, whose preparation is on the single crystal silicon substrate and is used for adjusting mismatch strain of epitaxial grown film of zinc oxide. By adopting the invention, mismatch strain of epitaxial film of zinc oxide on silicon substrate can be adjusted and residual stress be reduced, thus improving the crystal quality and surface appearance and laying a foundation for research of silicon-based optoelectronic devices.

Description

Technical field [0001] The invention relates to the technical field of preparation of zinc oxide epitaxial thin films in semiconductor materials, in particular to a silicon-based covariable substrate material with a thin hafnium nitride covariable layer. Background technique [0002] Zinc oxide (ZnO) has a band gap and crystal structure similar to that of gallium nitride (GaN), and is considered to be the most promising third-generation semiconductor optoelectronic functional material that competes with GaN. This is because it has the following advantages: [0003] (1) It has higher binding energy of excitons. The exciton binding energy of ZnO is about 60 meV, which is about 2.5 times the room temperature thermal kinetic energy and GaN exciton binding energy (about 26 meV). It is easy to realize room temperature ultraviolet luminescence or stimulated emission with low threshold and high gain. [0004] (2) Easy to cleavage. The cleavage surface can become the laser oscillation cav...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L33/00H01L23/00H01S5/00H01L33/26
Inventor 杨少延范海波李成明陈涌海王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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