114 results about "Cmos switch" patented technology

A matching network for matching an antenna to a transmitter or receiver comprises an input port for receiving high-frequency power, an output port and a switchable impedance transformation circuit, which is connected between the input port and the output port. The impedance transformation circuit comprises a CMOS switch in a high-frequency path, which has a first switching state and a second switching state. The impedance transformation circuit is implemented to match a first impedance applied to the output port to a first predetermined impedance in the first switching state, and to match a second impedance applied to the output port to a second predetermined impedance in the second switching state. The inventive matching network allows a particularly good utilization of power provided by a transmitting amplifier or an antenna.

The invention refers to a phase locked loop circuit and a method of generating clock signals using the phase locked loop. Phase locked loop (PLL) architectures are provided such as hybrid PLL architectures having separate digital integrating control paths and analog proportional control paths. An analog proportional control path can be implemented with a charge pump circuit that includes resistors in series with CMOS switches to generate control currents (e.g., Up / Down control currents) which are used to adjust a control voltage applied to a digitally controlled oscillator. A digital integrating control path can be implemented with a series of sigma-delta modulators that operate at different frequencies to convert higher bit data signals to lower bit data signals along the digital integrating control path. A single phase frequency detector may be implemented to generate control signals that separately control the analog proportional and digital integrating control paths.

The invention provides a CMOS switch circuit with wider bandwidth, high isolation and low on-resistance, which is used for multi-path high-frequency analog signal switching. By adopting the technology of floating trap and grid impedance control, the problem that the on-resistance and the transmission bandwidth of the traditional CMOS analog switch circuit are restricted with each other can be solved, so that the signal transmission bandwidth of the CMOS switch under the same on-resistance and isolation can be greatly improved.

A motor bridge driver interface, implemented in an ASIC using cost-efficient CMOS technology, is designed to control four external MOS power transistors in a H-bridge configuration for DC-motor driving to achieve accurate and fast switching. Said driver interface is comprising a charge pump for generating the control voltage for the high-side N-channel MOS transistors, high-side (HSD) circuits, low-side (LSD) circuits and a complex digital interface for supplying the control signals in a programmable timing scheme. A “strong” charge pump is used to realize a simple CMOS switch to steer the output to the high-side transistors of said H-bridge. The motor bridge is connected to the battery supply by an additional N-channel MOS transistor to implement a reverse supply protection.

The present invention relates to a current temperature sensor circuit for CMOS switch and control method thereof. The sensor circuit comprises a voltage generation circuit, an operational amplifier, an input capacitor, a feedback capacitor, a resistance voltage divider, a control circuit and several MOS switches. The voltage generation circuit is connected with an external power supply to output the first interelectrode voltage and the second interelectrode voltage. An out-phase input of the operational amplifier is connected with the voltage generation circuit through the input capacitor to receive the first interelectrode voltage while the in-phase input receives the second interelectrode voltage; and the output of the operational amplifier is divided into two paths which respectively output reference voltage and positive temperature coefficient voltage. By utilizing dynamic element matching technique, the current temperature sensor circuit can generate an accurate amplifying coefficient for a small voltage difference delta Vbe, and generate accurate reference voltage independent of temperature and positive temperature coefficient voltage varying in direct proportion to temperature, thus effectively improving temperature detection accuracy of the temperature sensor.

A transmitting and receiving circuit for an ultrasonic flowmeter. In such circuits, an ultrasonic transducer is typically used as both transmitter and receiver. This is obtained by using switching means, for example in the form of CMOS switches. However, problems arise with ringings of a transducer when having acted as a transmitter. This unwanted ringing makes the crystal of the transducer act as an additional signal generator, and the signal is coupled via parasitic capacitances in a switching means to the receiving ultrasonic transducer. This problem is solved by connecting one pole of a short circuit switch (S3, S4) to the ultrasonic transducer (TR1, TR2) or to the switching means (S1, S2) and the other pole of the short circuit switch to ground. Keeping the short circuit switch closed when the switching means is open, and open when the switching means is closed, creates a decoupling path for the unwanted signal, thereby improving the accuracy of the transmitting and receiving circuit.

Provided is a CMOS switch for use in RF switching having improved isolation properties. The CMOS switch includes a serial switching unit having first and second CMOS switches, a switching isolation unit for allowing an unselected output terminal of two output terminals to be electrically isolated from a common input terminal when the serial switching unit operates and an isolation enhancement unit. The isolation enhancement unit is connected in parallel to the first and the second CMOS switches between the two output terminals forming a parallel resonance circuit together with a parasitic capacitor of the serial switching unit. The CMOS switch for use in RF switching according to the present invention has a simple circuit structure and excellent operating properties at the MF or higher band. Also, the CMOS switch having high isolation properties is realized.

A CMOS analog switch circuit includes an NMOS switch transistor, a PMOS switch transistor, and a bias circuit. In an embodiment, the bias circuit includes a first and a second native bias transistors having their gate terminals coupled to a first and a second terminals of the CMOS switch circuit, respectively. The source terminals of the first and the second native bias transistors are coupled together and are also coupled to the body terminal of the PMOS switch transistor. In an configuration, the first and the second native bias transistors are characterized by substantially 0V threshold voltages, and the PMOS switch transistor is configured to exhibit a lower on-resistance in response to the greater of the voltages of the first terminal and the second terminal of the CMOS analog switch circuit.

Power mixer arrays for providing watt-level power in mobile systems. In one embodiment, a fully-integrated octave-range CMOS power mixer that occupies only 2.6 mm2 using a 130 nm semiconductor process has been demonstrated. The power mixer provides an output power of +31.5 dBm into an external 50 Ω load with a power added efficiency (PAE) of 44% at 1.8 GHz and a full power gain compression of only 0.4 dB.

Methods and systems for a balun embedded in an integrated circuit package are disclosed and may include a multi-layer package bonded to an integrated circuit. The multi-layer package may include an integrated balun which may be enabled to process RF signals received from and / or communicated to an antenna. The integrated circuit may be flip-chip bonded to the multi-layer package. The balun may include ferromagnetic layers integrated in the multi-layer package, and may be bypassed via bypass switches integrated in the multi-layer package. The switches integrated in the multi-layer package may include MEMS switches. The balun may be bypassed via bypass switches in the integrated circuit. The switches in the integrated circuit may include CMOS switches. The balun may be impedance matched to the integrated circuit via surface mount devices, which may be coupled to the multi-layer package.