38results about How to "Strong data retention" patented technology

Provided are a flash memory unit and a floating gate forming method thereof. The floating gate forming method of the flash memory unit comprises the following steps of providing a substrate on which a floating gate layer doped with first type ions is formed; forming a graphical first photoresist on the floating gate layer doped with the first type ions; etching the graphical first photoresist through a dry method, wherein the figure of the first photoresist after etching through the dry method has a smaller dimension than the figure of the first photoresist before etching through the dry method; and performing a second type ion injection to the floating gate layer doped with the first type ions by using the first photoresist after etching through the dry method as a mask layer to form a floating gate layer with a double doped structure, wherein the first type ions is inversed with the second type ions. According to the floating gate of the flash memory unit and the flash memory unit forming method, the flash memory unit that is small in critical dimension and has the double doped floating gate structure can be produced, and the flash memory unit is high in programming efficiency, high in data maintenance capability and low in cost of processing.

An erasable rewriting phase change optical disk capable of being subjected to fluorescent read comprises an upper protective layer, a recording layer, a lower protective layer and a disk base, and is characterized in that the recording layer is a fluorescent phase change recording layer; the fluorescent phase change recording layer is formed by mixing an Sb2Te3-GeTe film into BiSb of which the thickness is 10-200 nm or mixing the Sb2Te3-GeTe film into NiO of which the thickness is 10-200 nm. The optical disk reserves the characteristics of quick writing and erasing speed, strong data retentivity and high cycling stability of the conventional phase change optical disk, and meanwhile the signal-to-noise ratio of reading is greatly improved. The reading is not reflective reading, no extra metal reflecting layer is needed, and the structure of the film is simpler as compared with the conventional phase change optical disk.

The invention relates to a nanocomposite phase-change material, a preparation method and an application thereof in a phase-change memory, wherein the nanocomposite phase-change material comprises a phase-change material GeTe with a molar percentage of 70-99% and a medium material HfO2 with a molar percentage of 1-30%. The phase-change material GeTe and the medium material HfO2 are uniformly compounded in a nanoscale, so that the crystallization of the phase-change material is suppressed, the thermal stability of the material is enhanced and the data keeping capacity of the material is improved on one hand, and the valid programming volume is reduced due to the participation of the medium material so as to reduce the volume change before and after the crystallization of phase-change unit and decrease the RESET current on the other hand; therefore, the operation stability and the realization of low power consumption of storage apparatus are promoted. In a word, the novel nanocomposite phase-change material is applied to a memory, and is capable of decreasing the RESET voltage of a phase-change storage apparatus and reducing the programming volume, which is beneficial to realizing high-density storage, increasing the heating efficiency of the phase-change memory during programming process, decreasing the power consumption, enhancing data keeping capacity, and the like.