30results about How to "Stable capacitance value" patented technology

A variable capacitor device using MEMS or micromachining techniques wherein thin-films of materials are deposited, patterned and etched to form movable micromechanical elements on the surface of a substrate composed of either semiconductor, glass, metal, or ceramic material. In one embodiment of the present invention to achieve higher frequency performance as well as other benefits, the substrate is comprised of Low-Temperature Co-Fired Ceramics (LTCC). The variable capacitor is an electrostatically actuated micromechanical device and if fabricated on a LTCC multi-layered substrate material has continuous electrical connections through the layers. The same LTCC substrate material can also be used to enclose the device by selectively removing a portion of the upper substrate so as to form a cavity. The two substrates are then bonded together to enclose and protect the variable capacitor. An integrated circuit can be incorporation onto the multi-level substrate structure to enable a electronic closed-loop controlled variable capacitor module. The integrated circuit is flip-chip bonded at the bottom of the substrate structure with appropriate electrical connections between the integrated circuit and the MEMS variable capacitor device. A variation of the present invention utilizes a zipper actuation method wherein the tuning ratio of the variable capacitor is increased to very high levels. Yet another variation of the present invention utilizes a differential gap between the top and bottom electrodes such that the actuation electrodes do not physically contact one another. Yet another implementation of the present invention uses an extra set of electrodes or mechanical mechanism so as to lock the value of the capacitor indefinitely. Yet another implementation uses shaped actuation electrodes so as to linearize the relationship between the applied actuation voltage and the resultant capacitance of the device.

The invention discloses a MOS-pipe-based double-grid-regulation ultra-high-sensitivity biosensor, which is suitable for a series of early-stage tumour detection. The sensor is made from an SOI sheet,and a unique double-grid control structure is formed through ion implantation. The sensor is made via ultraviolet lithography combined with an NLD etching method and can detect a trace amount of a tumour marker immediately without labeling. Compared with a common sensor used for detecting current or conductance, the sensor can detect change of capacitance in a channel in an antigen-antibody combination process. A detection method related in the invention is stable and good in interference immunity, and can meet the requirements of detection range and sensitivity, has extremely outstanding performance particularly with respect to detection sensitivity, and can detect a sample with the lowest concentration in a range of 1 fg / ml-1 ng / ml.

The invention provides a lead-acid storage battery. The lead-acid storage battery comprises a housing, a positive electrode plate, a negative electrode plate, a separating plate and electrolyte, wherein the positive electrode plate, the negative electrode plate and the separating plate are arranged in the housing; the electrolyte is injected into the housing; the positive electrode plate comprises a positive electrode plate grid, and positive electrode lead acid layers which cover two surfaces of the positive electrode plate grid; the positive electrode plate grid is prepared from the following components in percentage by weight: 0.05 to 0.2% of calcium, 0.6 to 1.0% of tin, 0.01 to 0.05% of aluminum, and the balance of lead; the negative electrode plate comprises a negative electrode plate grid, and negative electrode lead acid layers which cover two surfaces of the negative electrode plate grid; the negative electrode plate grid is prepared from the following components in percentage by weight: 0.05 to 0.2% of calcium, 0.1 to 0.5% of tin, 0.01 to 0.05% of aluminum, and the balance of lead. The lead-acid storage battery has the advantages of being high in large-current discharging stability, high in low-temperature starting capacity, outstanding in corrosion resistance, long in circular charging-discharging life, and remarkable in comprehensive performances.

A semiconductor device includes a MIM capacitor that includes an insulating film and a first electrode and a second electrode which are formed in the same layer in the insulating film and are facing to each other with the insulating film interposed therebetween. The first electrode and the second electrode respectively include a first high aspect via and a second high aspect via which extend as long as a length, in a stacked direction of the substrate, of a via and an interconnect provided on the via so as to be connected to the via formed in another region. A first potential and a second potential are respectively supplied to the first electrode and the second electrode.

The inventionprovides a positive plate used for a lead-acid storage battery. The positive plate comprises an alloy plate grid and lead-acid layers coating two surfaces of the alloy plate grid, wherein the alloy plate grid is prepared from the following components in percentage by weight: 0.05-0.2% of calcium, 0.6-1.0% of tin, 0.01-0.05% of aluminum and the balance of lead;each lead-acid layer is mainly prepared from the following components in parts by weight: 950-1050 parts of lead powder, 100-110 parts of water and 90-100 parts of sulfuric acid in the specification of 1.4g / cm3. The lead-acid storage battery with the positive platehas the advantages of good heavy-current discharge stability, highlow-temperature start capacity, excellentanti-corrosion performance, longcirculating charge and discharge life and excellent comprehensive performance.

The invention discloses a capacitor which comprises two capacitor polar plates and an insulating layer clamped between the two polar plates, wherein the insulating layer comprises a silicon oxide layer and a silicon nitride layer. The invention has the advantages that: the insulating layer of the capacitor comprises the silicon oxide layer and also the silicon nitride layer, thereby inhibiting the phenomenon that a capacitance value varies along with the voltage brought by singly adopting silicon oxide and silicon nitride, and the capacitor with stable capacitance value is obtained.

A variable capacitor device is disclosed in which the capacitive tuning ratio and quality factor are increased to very high levels, and in which the capacitance value of the device is tuned and held to a desired value with a high level of accuracy and precision using a laser micromachining tuning process on suitably designed and fabricated capacitor devices. The tuning of the variable capacitor devices can be performed open-loop or closed-loop, depending on the precision of the eventual capacitor value needed or desired. Furthermore, the tuning to a pre-determined value can be performed before the variable capacitor device is connected to a circuit, or alternatively, the tuning to a desired value can be performed after the variable capacitor device has been connected into a circuit.

The present invention provides a composite humidity sensitive material used for a capacitive humidity sensor and a sensor preparation method, the formula of the composite humidity sensitive material is as follows: mixing titanium oxide or barium titanate with barium strontium titanate in the mass ratio of 1:1-1:3 to obtain an initial functional ceramic material, mixing polyamide or polytetrafluoroethylene with the initial functional ceramic material in the mass ratio of 0.3wt%-0.5wt% to obtain a mixture; and mixing an inert metal with the mixture in the mass ratio of 15wt%-25wt%. A composite humidity sensitive film is prepared by an aerosol deposition technology from the composite humidity sensitive material, and the capacitive humidity sensor is prepared from the film by a semiconductor processing technology. The sensor has high precision, high stability, heat resistance, pollution prevention and high reliability.

The invention discloses a self-repairing method for a PT intelligent blocking device, and relates to the technical field of blocking devices. By redesigning a miniature capacitor plate circuit on an internal thin film of a main body capacitor of the PT intelligent blocking device, after a certain main body miniature capacitor in the miniature capacitor plate circuit is broken down, the main body capacitance value of the miniature capacitor plate circuit is kept stable; and when the capacitance value of the PT intelligent blocking device cannot be kept stable after the PT intelligent blocking device breaks down, the main body capacitance value of the broken-down PT intelligent blocking device is adjusted through an intelligent algorithm, and then the capacitance value of the PT blocking device can be kept stable all the time and cannot deviate. The problem that the capacitance value of a main body capacitance value in an existing PT intelligent blocking device drifts due to the fact that part of miniature capacitors inside are damaged is solved.

The invention discloses a preparation method of a graphene / poly(1,3,6,8-tetrathiophenepyrene) nano-scroll composite material. The method comprises the steps: mixing poly(1,3,6,8-tetrathiophenepyrene) and oxidized graphene, and preparing a nano-scroll structure through in-situ reduction, wherein the nano-scroll structure can serve as an electrode material of a supercapacitor. The invention relates to the preparation of the graphene / poly(1,3,6,8-tetrathiophenepyrene) nano-scroll composite material. The material serves as the electrode material of the supercapacitor, so a higher specific capacitance value can be obtained. The method is simple, and the working state is stable and reliable, so the method is worthy of being discloses and protected.

The invention discloses a cable foaming layer nitrogen charging control method and system, and the method comprises the steps: obtaining a detection image during the nitrogen charging of a core wire through X-ray flaw detection equipment in real time in the nitrogen charging process of the core wire processing of a cable; recognizing the foaming layer image of the cable in the detection image, calculating the uniformity of the foaming layer image during nitrogen charging, and adjusting the nitrogen charging speed according to the uniformity, so the thickness uniformity of the foaming layer can be moderate by intelligently controlling the nitrogen charging speed and air pressure, the capacitance value of the cable is stable, the transmission bandwidth and the transmission rate of the produced cable are ensured, and the stability of data transmission meets the technical requirements of high-speed transmission and information exchange, so that the produced cable has uniform transmission impedance.

The invention discloses a capacitive proximity switch sensor, which is used for detecting the distance between the capacitive proximity switch sensor and a detected metal surface, and comprises a detection pole plate, a power supply, a driving module, and a signal processing module. The detection pole plate is arranged opposite to a detected metal surface and forms an external capacitor with the detected metal surface; the anode of the power supply is connected with a power supply end through a first inductor; the cathode is connected with a grounding end, and is connected with a common end through the second inductor; a second capacitor is connected between the power supply end and the grounding end; the first inductor and the second inductor form a differential mode inductor; the cathode of the driving module is connected with the common end, and the anode is connected with the power supply end; the driving module is used for generating a driving signal and coupling the driving signal to the detection pole plate; and the signal processing module is coupled to the two ends of the second inductor and detects the external capacitor by detecting the voltage change at the two ends of the second inductor. Target detection is achieved through the external capacitor composed of the single pole plate and the detected target, the capacitance of the pole plate does not serve as a detection basis, and the capacitance value of the external capacitor is more stable.

The invention provides an electronic communication system for basketball fouls. The electronic communication system comprises a special basketball, and the surface of the special basketball is made of electroconductive rubber. The electronic communication system further comprises numbered sensing rings put on the wrists of players. Each sensing ring comprises a capacitor, wherein a first electrode of the capacitor is close to the skin of the human body, and a second electrode is not in contact with the skin of the human body. Each sensing ring further comprises a capacitance measuring module for the corresponding capacitor. After sensing a capacitance pulse, each capacitance measuring module sends a pulse signal containing the number of the sensing ring to a public judgment server in a competition venue through a wireless communication module in the sensing ring. The system can accurately judge the foul players causing out in time under the situation that the basketball is out, and the judgment difficulty can be greatly reduced.

The invention discloses a small-aperture capacitive electromagnetic flow sensor. The sensor comprises a shell, and a measuring guide pipe, a control device, an excitation circuit, an excitation coil,a signal electrode, a signal amplifier, a digital-to-analog converter and a power supply which are arranged in a cavity of the shell, wherein the excitation coil is arranged outside the measuring guide pipe, the excitation circuit is respectively connected with the excitation coil and the power supply, the measuring guide pipe is connected with the control device through the signal electrode, thesignal amplifier and the digital-to-analog converter. The sensor is advantaged in that the sensor belongs to a capacitive structure, the high-temperature co-fired multi-layer ceramic technology is creatively applied to the small-aperture measuring guide pipe, a capacitance value between a shielding layer and an electrode layer is stable and reliable, the induction capacitance value can be greatlyimproved, and compared with a capacitive measuring guide pipe with a conventional bonding electrode, the measuring guide pipe is higher in size precision, good in capacitance consistency, resistant tohigh temperature, resistant to vibration and resistant to corrosion.

The invention discloses a programmable capacitive circuit which comprises a signal input end, a signal output end, an OP1 (first operational amplifier) and an OP1 (second operational amplifier), wherein the first operational amplifier OP1 is connected with the signal input end and used for voltage following, and the second operational amplifier OP2 is used for voltage amplification. A digital potentiometer W1 is connected between the first operational amplifier OP1 and the second operational amplifier OP2 and connected with a control chip, a first end of a capacitor C1 is connected on a connection node of the signal input end and the first operational amplifier OP1, and a second end of the capacitor C1 is connected with the signal output end and an output end of the second operational amplifier OP2. According to the programmable capacitive circuit, a voltage-dividing coefficient K is accurately adjusted by the control chip U1, an equivalent capacitor C is controlled by adjusting the voltage-dividing coefficient K, and the range of the equivalent capacitor is wider when a resistor R2 and a resistor R1 are adjustable resistors.

The invention discloses a method for eliminating electric leakage of a capacitor in a semiconductor process, the capacitor and a semiconductor device, and belongs to the technical field of semiconductor manufacturing, and the method comprises the following steps: when the capacitor of the semiconductor device is manufactured, manufacturing a first electrode of the capacitor into an electrode structure containing an H atom barrier layer, and during specific implementation, manufacturing a second electrode of the capacitor into an H atom barrier layer; the electrode structure containing the H atom barrier layer can be a multi-metal layer structure containing a tungsten layer. The leakage problem of the capacitor in the semiconductor process is solved, the integration level of device manufacturing can be improved, the design margin can be improved conveniently, the integration level of the semiconductor device using the capacitor is improved, and the capacitance value stability and the memory refreshing performance can be ensured.

The invention relates to a voltage sensor. The voltage sensor comprises a first electrode, a second electrode and an integrated capacitor, wherein one end of the integrated capacitor is connected withthe first electrode; and the other end of the integrated capacitor is connected with the second electrode. The voltage sensor provided by the invention has higher flexibility in actual use.