The invention provides a double-sided preparation method of a drift
detector, which comprises forming a first
isolation layer on one side of a
semiconductor substrate, sequentially forming a second
isolation layer and an anti-
corrosion layer on the other side of the
semiconductor substrate, and selectively removing the first
isolation layer. One isolating layer to form the
anode region and the drift ring region, and the second isolating layer and the anti-
corrosion layer are selectively removed to form the collection region; the
anode region, the drift ring region and the collection region are respectively
ion-doped and the
semiconductor substrate is annealed ; forming a
dielectric layer on the surfaces of the
anode region, the drift ring region and the collection region; forming a
contact hole through the
dielectric layer on the
dielectric layer, and filling the
contact hole to form a
metal lead. In the present invention, by depositing an anti-
corrosion layer on the second isolation layer, the damage to the second isolation layer, the anode area and the drift ring area is reduced when the first isolation layer is removed by a wet
etching process, which is beneficial to the use of single-sided light
Engraving technology realizes double-sided process. The present invention also provides a drift
detector obtained by applying the above double-sided preparation method.