60results about How to "Reduced Threshold Voltage Drift" patented technology

A multi-channel thin film transistor structure including a first conducting layer, an insulating layer, a semiconductor layer and a second conducting layer is provided. The first conducting layer formed on a substrate includes a gate electrode. The insulating layer covers the first conducting layer. The semiconductor layer formed on the insulating layer includes a plurality of semiconductor islands located above the gate electrode. The second conducting layer formed on the insulating layer and on the semiconductor layer includes a source electrode and a drain electrode. Each one of the semiconductor islands is coupled electrically with the source electrode at one end and coupled electrically with the drain electrode at the other end.

A system includes a silicon carbide (SiC) semiconductor device and a hermetically sealed packaging enclosing the SiC semiconductor device. The hermetically sealed packaging is configured to maintain a particular atmosphere near the SiC semiconductor device. Further, the particular atmosphere limits a shift in a threshold voltage of the SiC semiconductor device to less than 1 V during operation.

The invention discloses a nano-wire field effect transistor comprising a gate electrode, a source region, a drain region, a central region and a gate dielectric layer. The central region is in the core-shell structures which are coaxial; the gate dielectric layer fully surrounds the central region; the gate electrode fully surrounds the gate dielectric layer; the source region and the drain region are respectively arranged on two sides of the central region; the core structure of the central region is made from insulating material, and the shell structure of the central region is made from semiconductor material; the doping type and the doping concentration of the semiconductor material of the shell structure of the central region are adjustable; the lengths of both the core structure andthe shell structure and the radii of both the core structure and the shell structure are adjustable; and the materials of the gate dielectric layer, the gate electrode, the source region and the drain region are adjustable. Due to the adoption of the insulating core structure, the off-current of the traditional nano-wire transistor can be reduced effectively, and the current on-off ratio of the devices can be increased. The threshold voltage shifting and the drain induced barrier lowering of the nano-wire field effect transistor are less affected by the short channel effect, and the size reducing performance of the nano-wire field effect transistor is more excellent.

An analog-to-digital converter (ADC) for converting an optical signal into an electrical signal is disclosed. The ADC includes a detection module, a first P-type metal oxide semiconductor (PMOS) transistor, a first N-type metal oxide semiconductor (NMOS) transistor, a first switch unit, and an output module. The first PMOS transistor and the first NMOS transistor form an inverter. The first switch unit is disposed between the input terminal and the output terminal of the inverter and is turned on / off according to a first control signal. The output module is coupled to the output terminal of the inverter for counting the time that an input voltage is greater than a reference voltage and generating a digital signal.

The invention provides an AMOLED pixel driver circuit and pixel driving method. The AMOLED pixel driver circuit has a 6T1C structure, comprising a first thin film transistor (TFT) (T1), a second TFT (T2) forming mirror relation with the first TFT (T1), a third TFT (T3), a fourth TFT (T4), a fifth TFT (T5), a sixth TFT (T6), a capacitor (c1), and an organic light-emitting diode (OLED) (D1), and receiving a first scan signal (Scan1), a second scan signal (Scan2), a third scan signal (Scan3), a data signal (Data), and a predefined voltage (Vpre). The circuit can effectively compensate the threshold voltage of the driving TFT to solve the problem of unstable current flowing through the OLED caused by the threshold voltage drift. Moreover, the use of double-gate TFT as driving TFT allows designating the threshold voltage of the driving TFT through inputting predefined voltage.

The present invention provides a shift register unit, a gate driving circuit and a display device. The shift register unit comprises: an input module for, in response to turn-on level input via the shift register input terminal, providing turn-on level to the first node and providing turn-off level to the second node; a pull-up module for, in response to turn-on level of the first node, providing a clock signal to the shift register output terminal, and also used for, in response to turn-on level output by the shift register output terminal, providing turn-off level to the second node; a reset module for, in response to turn-on level input via the reset signal input terminal, providing the turn-on level to the second node; and a pull-down module for, in response to turn-on level of the second node, providing turn-off level to the shift register output terminal and the first node.

Disclosed are a pixel circuit, a driving method thereof, and a display panel including the pixel circuit. The pixel circuit includes: a light emitting module, a first driving module and a second driving module, the first driving module drives the light emitting module during a first period under the control of the first scanning signal of the first scanning control terminal emit light, and the second driving module drives the light emitting module to emit light during a second period under the control of the second scan signal of the second scan control terminal, and the first period and the second period do not overlap with each other . By using two driving modules to alternately drive the light-emitting device to emit light, the other driving module enters the recovery phase when one driving module drives the light-emitting device to emit light, so that the threshold voltage drift of the driving transistor in each driving module can be reduced, and at the same time, each driving module can be extended. The service life of the drive transistor of the module.