The invention is applicable to the technical field of MOS devices, and provides a numerical
simulation method and
system of MOS device inhomogeneous interface degradation electric charges. The ground floor of
software is modified, a functional model for calculating the number of the inhomogeneous interface electric charges Nit (x,t) is added, and therefore numerical
simulation of influences of the inhomogeneous interface electric charges on device performance can be achieved. An interface
electric charge degradation model interface is further added for achieving the numerical
simulation method, and therefore the numerical simulation on the inhomogeneous interface electric charges caused by various effects can be achieved. A device parameter extraction interface is further added for achieving the numerical simulation method, and
device parameters comprising
threshold voltage, output characteristics,
transconductance, electrons, hole concentration distribution, potential distribution,
electric field distribution and the like can be extracted. According to a degradation model of an NBTI, unique change rules of the pure polarization NBTI effect under HCI stress can be disclosed, the relationship between
device degradation and the service life is deeply understood, the
process design is guided, and the development of reliability studying of integrated circuits can be further promoted.