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Numerical simulation method and system of MOS device inhomogeneous interface degeneration electric charges

A MOS device, interface charge technology, applied in the direction of electrical digital data processing, instruments, special data processing applications, etc., can solve the problem of not considering non-uniform interface charge, the bottom layer of the software does not support non-uniform interface charge, and no interface charge is reserved Degenerate model interface and other issues

Active Publication Date: 2013-09-25
SHENZHEN UNIV
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Problems solved by technology

Unable to model non-uniform interfacial charge generation and its effect on device parameters
[0008] 2) These softwares do not consider the non-uniform interface charge, and think that the interface charge is uniform, and use an interface charge constant N it To describe, so the bottom layer of the software does not support non-uniform interface charge
[0009] 3) These software do not reserve a model interface for the degradation of various interface charges, and users cannot add degradation models of interface charges caused by various effects

Method used

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  • Numerical simulation method and system of MOS device inhomogeneous interface degeneration electric charges
  • Numerical simulation method and system of MOS device inhomogeneous interface degeneration electric charges
  • Numerical simulation method and system of MOS device inhomogeneous interface degeneration electric charges

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Embodiment Construction

[0062] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0063] The present invention changes the bottom layer of the software, and increases the calculation of the number of non-uniform interface charges N it (x, t) function model, so that the numerical simulation of the influence of non-uniform interface charge on the performance of MOS devices can be realized. The numerical simulation method also adds an interface charge degradation model interface, so that the numerical simulation of non-uniform interface charge caused by various effects can be carried out; the numerical simulation method also adds a device parameter extraction interface, which can e...

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Abstract

The invention is applicable to the technical field of MOS devices, and provides a numerical simulation method and system of MOS device inhomogeneous interface degradation electric charges. The ground floor of software is modified, a functional model for calculating the number of the inhomogeneous interface electric charges Nit (x,t) is added, and therefore numerical simulation of influences of the inhomogeneous interface electric charges on device performance can be achieved. An interface electric charge degradation model interface is further added for achieving the numerical simulation method, and therefore the numerical simulation on the inhomogeneous interface electric charges caused by various effects can be achieved. A device parameter extraction interface is further added for achieving the numerical simulation method, and device parameters comprising threshold voltage, output characteristics, transconductance, electrons, hole concentration distribution, potential distribution, electric field distribution and the like can be extracted. According to a degradation model of an NBTI, unique change rules of the pure polarization NBTI effect under HCI stress can be disclosed, the relationship between device degradation and the service life is deeply understood, the process design is guided, and the development of reliability studying of integrated circuits can be further promoted.

Description

technical field [0001] The invention belongs to the technical field of MOS devices, and in particular relates to a numerical simulation method and system for non-uniform interface degeneration charges of MOS devices. Background technique [0002] From the perspective of the development law of integrated circuits, high performance and high reliability have always been the two commanding heights of their development. On the one hand, the development of integrated circuits is moving towards greater integration, which improves the performance of devices and circuits, and reduces the production cost of unit circuits. This is the driving force behind the development of integrated circuit technology; on the other hand, reliability issues are always accompanied by With the development and application of integrated circuit technology, and with the further reduction of the feature size of integrated circuits, the reliability problem has become more and more prominent, the most importa...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 曹建民黄思文
Owner SHENZHEN UNIV
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