40 results about "Schrödinger equation" patented technology

In the present work, quantum clustering is extended to provide a dynamical approach for data clustering using a time-dependent Schrödinger equation. To expedite computations, we can approximate the time-dependent Hamiltonian formalism by a truncated calculation within a set of Gaussian wave-functions (coherent states) centered around the original points. This allows for analytic evaluation of the time evolution of all such states, opening up the possibility of exploration of relationships among data points through observation of varying dynamical-distances among points and convergence of points into clusters. This formalism may be further supplemented by preprocessing, such as dimensional reduction through singular value decomposition and / or feature filtering. Additionally, the parameters of the analysis can be modified in order to improve the efficiency of the dynamic quantum clustering processes.

A control section virtually divides a surface of an adsorbing material into a plurality of regions (cells) in accordance with a computer program. Further, the control section-allocates a normal distribution function to each of the divided cells, and sets a linear combination of the normal distribution functions allocated to all cells to a trial function. Moreover, the control section solves a Schrödinger equation based upon a potential on the surface of the adsorbing material by a numerical variational method, to calculate a wave function. Then, based upon the calculated wave function, the quantum state of the atom or the molecule adsorbed on the surface of the adsorbing material is estimated.

The invention discloses a stock price trend prediction method based on the quantum mechanics and the social network. The micro particle characteristics of an individual investor affective decision in the social network are fully considered, the wave function and the operator of the individual decision in the network are defined, the influence relation between individuals in the social network is simulated by a segmented infinite potential well, the emotion of a single investor is predicted by a schrodinger equation and is overlaid by the emotion in the social network, the stock price variation trend is described, and the quantum mechanics model of the social network can be used for effectively improving the stock price trend prediction accuracy. The stock price trend prediction method based on the quantum mechanics and the social network has an important theoretical significance and economic value.

The invention discloses a light pulse generation method capable of creating an arbitrary superposition state of qubits in a three-level system. The invariant theory is used to reversely solve the time-dependent Schrodinger equation of the three-level system to construct a set of two-color light capable of generating an arbitrary superposition state of qubits. Field-strength information of the pulse, using an arbitrary wave generator and an acousto-optic modulator, to generate a two-color light pulse, the additional degrees of freedom in the field strength of the two-color light pulse are used to optimize the shape of the pulse for the frequency disturbances present in the system. Harmonic quantities exhibit robustness, and the off-resonance excitation of background ions present in the system is small enough to create arbitrary superposition states of qubits with fidelity in short action times; An arbitrary superposition state of a qubit is generated within the action time, the fidelity is not less than 99.5% in the range of frequency detuning of ±340kHz, and the non-resonant excitation of background ions is not more than 2%.

The invention discloses a graphene field-effect transistor linearly doped with a bi-material gate. On the basis of a quantum mechanics nonequilibrium green function theoretical framework, a transport model suitable for the graphene field-effect transistor is built through self-consistent solution Poisson and Schrodinger equation, and further, the influence of a homogenous-material gate and a bi-material heterogeneous gate strategy on electrical properties of the GNRFET (graphene nanoribbon field-effect transistor) is analyzed and calculated by the model. Compared with the electrical properties, such as the output characteristic, the transfer characteristic, the switching current ratio and the like, of the field-effect transistor adopting the bi-material gate, the field-effect transistor adopting a bi-material heterogeneous gate underlap linear doped strategic structure has the larger switching current ratio, and smaller subthreshold amplitude and threshold voltage drift, and namely, the bi-material heterogeneous gate underlap linear doping has a better gate-control capacity, so that a short-channel effect, a band-to-band tunneling effect and a hot carrier effect can be restrained effectively.

The invention is a method for manufacturing an electron gas back barrier gallium nitride heterojunction field effect transistor, which is characterized in that different heterojunctions are independently designed for the inner channel under the gate electrode of the field effect transistor and the outer channel outside the gate electrode. The material structure keeps sufficient electron gas density in the outer channel under large RF gate voltage fluctuations, uses electron negative charges to generate a back potential barrier, and suppresses energy band distortion and channel blockage of the outer channel during the RF operation of the device. Then the barrier layer is thinned to form an inner channel heterojunction, and the control of the gate electrode to the conductance of the inner channel is improved to realize efficient radio frequency operation. By self-consistently solving the two-dimensional Poisson equation and the Schrödinger equation to study the interaction between the inner and outer channels, and to suppress the energy band distortion and current collapse in the radio frequency operation of the device. Balance the electric field distribution of the inner and outer channels and increase the breakdown voltage.