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Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser

A technology of quantum cascade and design method, which is applied in the direction of lasers, phonon exciters, laser components, etc., and can solve problems such as quantum cascade lasers that have not been developed

Inactive Publication Date: 2012-06-20
HARBIN NORMAL UNIVERSITY
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Problems solved by technology

[0004] At present, quantum cascade lasers based on GaN / AlGaN materials have not yet been developed. Terahertz lasers based on GaAs / AlGaAs and silicon materials have been successfully developed. Method for forming the active region structure of the detector", the application number is 2008100340775, and the name is "semiconductor silicon terahertz laser source device"

Method used

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  • Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser
  • Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser
  • Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser

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specific Embodiment approach 1

[0045] Specific implementation mode 1: The simulation design method of the active region structure of the AlGaN / GaN terahertz quantum cascade laser in this implementation mode, the steps to realize the method are as follows:

[0046] Step 1. Determine the parameters required in the one-dimensional effective mass Schrödinger equation:

[0047] The Schrödinger equation with effective mass is

[0048] - h 2 2 d dz ( 1 m * ( z ) d ψ i dz ) + [ ΔU + eFz ] ψ i ...

Embodiment

[0067] Step 1. Determine the parameters required in the one-dimensional effective mass Schrödinger equation:

[0068] The one-dimensional Schrödinger equation with effective mass is

[0069] - h 2 2 d dz ( 1 m * ( z ) d ψ i dz ) + [ ΔU + eFz ] ψ i = E i ψ i

[0070] where z is the growth direction of the material, E i is the i-th eigenenergy of the electron, ψ i for and E...

specific Embodiment approach 2

[0117] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the calculation formula of ΔU in step 1 is ΔU=0.7[E g (x)-E g (0)], where x is the atomic percentage of Al in AlGaN, and E g (x) is the band gap energy of AlGaN, and its calculation formula is as follows:

[0118] E. g (x)=xE g (AlN)+(1-x)E g (GaN)-x(1-x)1.0eV.

[0119] =x6.13eV+(1-x)3.42eV-x(1-x)1.0eV. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

A method for analog designing of an active area of an AlGaN / GaN terahertz quantum cascade laser relates to methods for analog designing of active areas of terahertz quantum cascade lasers. The method includes: firstly, determining parameters required in one-dimensional effective mass Schrodinger equation; secondly, solving the Schrodinger equation; thirdly, calculating delta E21, delta E32 and delta E1'3; fourthly, judging; fifthly, searching the optimum structure; and sixthly, outputting the structure. The active area consists of n periods, and each period consists of three barrier layers and three potential well layers. The method can be applied to designing of active areas of terahertz quantum cascade lasers, and has the advantages that the longitudinal optical phonon scattering principle and the tunneling principle are fully used while the optimum active area structure can be searched out.

Description

technical field [0001] The invention relates to a simulation design method for the active region structure of a terahertz quantum cascade laser. Background technique [0002] Terahertz waves refer to electromagnetic waves with a frequency between 0.1THz-10THz, between microwaves and infrared light. Terahertz technology has broad application prospects in the fields of material characterization, medical diagnosis, environmental detection, broadband wireless communication, and short-distance wireless secure communication. Terahertz radiation source is the key device of terahertz technology. The terahertz quantum cascade laser based on the multi-quantum well cascaded structure is an all-solid-state, coherent THz radiation source. It is a unipolar device, where electron transitions between conduction band sublevels emit photons. After Bell Labs realized the mid-infrared quantum cascade laser for the first time in 1994, Italian and British scientists jointly developed the world...

Claims

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Application Information

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IPC IPC(8): G06F17/50H01S5/343
Inventor 张迪赵立萍孙文军孙京南李孟洋支洪武李娟
Owner HARBIN NORMAL UNIVERSITY
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