Method for analog designing of active area of AlGaN/GaN terahertz quantum cascade laser
A technology of quantum cascade and design method, which is applied in the direction of lasers, phonon exciters, laser components, etc., and can solve problems such as quantum cascade lasers that have not been developed
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specific Embodiment approach 1
[0045] Specific implementation mode 1: The simulation design method of the active region structure of the AlGaN / GaN terahertz quantum cascade laser in this implementation mode, the steps to realize the method are as follows:
[0046] Step 1. Determine the parameters required in the one-dimensional effective mass Schrödinger equation:
[0047] The Schrödinger equation with effective mass is
[0048] - h 2 2 d dz ( 1 m * ( z ) d ψ i dz ) + [ ΔU + eFz ] ψ i ...
Embodiment
[0067] Step 1. Determine the parameters required in the one-dimensional effective mass Schrödinger equation:
[0068] The one-dimensional Schrödinger equation with effective mass is
[0069] - h 2 2 d dz ( 1 m * ( z ) d ψ i dz ) + [ ΔU + eFz ] ψ i = E i ψ i
[0070] where z is the growth direction of the material, E i is the i-th eigenenergy of the electron, ψ i for and E...
specific Embodiment approach 2
[0117] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that the calculation formula of ΔU in step 1 is ΔU=0.7[E g (x)-E g (0)], where x is the atomic percentage of Al in AlGaN, and E g (x) is the band gap energy of AlGaN, and its calculation formula is as follows:
[0118] E. g (x)=xE g (AlN)+(1-x)E g (GaN)-x(1-x)1.0eV.
[0119] =x6.13eV+(1-x)3.42eV-x(1-x)1.0eV. Other steps and parameters are the same as those in Embodiment 1.
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