A method for manufacturing a
laser array and combiner monolithic integration
chip comprises the steps that an n-type InP buffer layer, an n-type AlGaInAs covering layer, an AlGaInAs multi-
quantum well layer, a p-type AlGaInAs covering layer, an InP interlayer, an InGaAsP
grating layer and an InP sacrificial layer are grown on an n-type InP substrate in sequence to form a substrate, an active region is arranged on one side of the base
chip, and a combiner region is arranged on the other side of the substrate; P ions are injected into the InP sacrificial layer of the combiner region, and fast thermal annealing is carried out; the InP sacrificial layer is removed, and gratings are manufactured in the InGaAsP
grating layer of the active region; a p-type InP covering layer and a p-type InGaAs
contact layer are grown on the InGaAsP
grating layer of the active region and the InGaAsP grating layer of the combiner region; the p-type InGaAs
contact layer, the p-type InP covering layer, the InGaAsP grating layer and the InP interlayer are removed through
dry etching,
ridge type waveguides of all
laser units are formed in the active region, and combiner
ridge type waveguides are formed in the combiner region; p electrodes are manufactured on the
ridge type waveguides of the active region; the n-type InP substrate is thinned, an n
electrode is manufactured on the back face of the n-type InP substrate, and manufacturing is completed.