31results about How to "Reduce the probability of electric leakage" patented technology

The invention discloses a reflector used for a gallium nitride-based luminescent device and a manufacturing method thereof and a luminescent device applying the reflector. The reflector is formed on a P-type gallium nitride-based epitaxial layer and comprises whisker crystals and a metal reflecting layer, wherein the whisker crystals are made from undoped gallium nitride, distributed in a certain density, formed on the surface of the P-type gallium nitride-based epitaxial layer in a position corresponding to a dislocation defect of the epitaxial layer; and the metal reflecting layer is formed on the P-type gallium nitride-based epitaxial layer and the whisker crystals. Undoped gallium nitride-based whisker crystals are arranged on the dislocation defect of the P-type GaN-based epitaxial layer, thus an Ag reflecting layer can be separated from the dislocation defect of the P-type GaN-based epitaxial layer, Ag is effectively inhibited from permeating into the inside of the dislocation defect in an electromigration way and electric leakage probability of the luminescent device comprising an Ag reflector can be greatly decreased.

The invention discloses a high-efficiency heterojunction solar cell and a preparation method thereof, and the preparation method is characterized in that a gettering process is added before a conventional heterojunction solar cell preparation process, and the gettering process is completed through a full-chain gettering process; the full-chain gettering process comprises the following steps: carrying out chain pre-cleaning on a silicon wafer; coating a gettering source on the surface of the silicon wafer in a chained manner; and carrying out chained high-temperature gettering on the silicon wafer. According to the preparation method, by reducing the metal impurity content of the N-type monocrystalline silicon wafer, the quality level of the silicon wafer is improved, the difference between the silicon wafers is reduced, and the conversion efficiency of the heterojunction solar cell is improved; the quality of the N-type monocrystalline silicon wafer tends to be consistent, the efficiency distribution of the prepared heterojunction solar cell is more concentrated, the discreteness of the efficiency distribution is reduced, and the product consistency is greatly improved.

The invention discloses a method for manufacturing a P-type double-sided crystalline silicon battery. Firstly, the silicon chip is made of double-sided texture by using the traditional texture-making process, and then the slurry printing process and the chain level are adopted with the solid impurity source as the main component. Diffusion process, followed by double-sided coating, double-sided printing of front silver electrodes and sintering. The process of preparing double-sided batteries by the method of the present invention is simpler than that of conventional double-sided batteries, especially the double-sided printing process and chain diffusion process, which ensures that different diffusion sources at the edge are not doped with each other, and at the same time reduces the leakage rate of the finished battery ; The diffusion time of the chain diffusion process is greatly shortened compared with the traditional tubular diffusion process, and the production efficiency is improved.

The invention provides a one-step wet black silicon preparation and surface treatment method, which includes the following steps: immersing the silicon wafer after removing the surface damage layer into an etching liquid and reacting to prepare black silicon; the etching liquid is concentrated hydrogen containing metal ions. A mixed aqueous solution of hydrofluoric acid, oxidant and high molecular polymer; the black silicon is immersed in the surface treatment etching liquid for surface optimization treatment, thereby obtaining a silicon wafer with a uniform texture of sub-micron structure; wherein, the surface treatment etching liquid contains Mixed acid aqueous solution of additives. The wet black silicon preparation method provided by the invention is simple in process and low in cost. The etched black silicon suede surface is uniform without sharp edges and has a reflectivity of 7-15%. This method greatly improves the absorption of light by silicon cells. Efficiency, solar cells made from black silicon produced by this method have lower cell leakage rate, stable open circuit voltage, and higher conversion efficiency.

The invention discloses an industrialized production process of a crystalline silicon solar battery, which comprises the following steps of: selecting a silicon chip; performing front surface matte making, phosphorous diffusion, the removal of phosphorosilicate glass formed on the surface during the phosphorous diffusion, and the deposition of silicon nitride on the front surface through PECVD inturn, and then putting an anti-reflecting film protected silicon ship provided with the front surface silicon nitride into heated alkali liquor to perform back polishing so as to remove a diffusion layer on the back surface; and washing and drying the silicon chip, and printing and sintering the silicon chip by adopting a bending-resistant aluminum paste silk screen. The process adopts a chemicalmethod to replace a plasma etching process, realizes non-contact of a matte surface of the silicon chip in the whole production flow, avoids matte surface damages caused by silicon chip friction, so the probability of electric leakage after facade silver paste sintering is reduced; the flat and clean back surface is favorable for the reaction of aluminum and silicon during the sintering to form amore uniform aluminum back surface field; and a polished surface has a stronger reflex action compared with an irregular matte surface, and can increase the absorption of incident light, improve the spectral response of the long-wavelength of a battery chip, and significantly improve a short-circuit current and an open-circuit voltage.

The invention provides a filter tube and a super-soft soil solidifying device provided with the same. The filter tube is a TPU wired hose. The TPU wired hose comprises a tube body made of TPU plasticmaterials, and a steel wire wound in the tube body spirally. The filter tube of the super-soft soil solidifying device has very high ring stiffness and cannot be vacuumized to be flat during vacuumizing generally, and the problem of flattening of a horizontal water drainage channel is free of worry.

The invention provides a growth method of a luminous diode epitaxial wafer, and belongs to the technical field of semiconductors. The growth method includes the steps that a buffer layer is formed ona substrate; a first intrinsic gallium nitride layer grows on the buffer layer; ions are used for bombarding the first intrinsic gallium nitride layer; a second intrinsic gallium nitride layer grows on the first intrinsic gallium nitride layer; ions are used for bombarding the second intrinsic gallium nitride layer, and the bombarding depth of the second intrinsic gallium nitride layer is larger than the bombarding depth of the first intrinsic gallium nitride layer; a third intrinsic gallium nitride layer grows on the second intrinsic gallium nitride layer, and the growth rate of the third intrinsic gallium nitride layer is lower than the growth rate of the second intrinsic gallium nitride; and an N type semiconductor layer, an active layer and a P type semiconductor layer sequentially grow on the third intrinsic gallium nitride layer. According to the growth method of the luminous diode epitaxial wafer, the density of internal wiring defects of the epitaxial wafer can be effectively reduced.

The invention discloses solid-state capacitance negative carbon foil. The solid-state capacitance negative carbon foil comprises a corrosion aluminum foil layer, wherein the corrosion aluminum foil layer is provided with upper and lower rough surfaces, upper and lower metal transition layers with high affinity to aluminum and graphite are plated on the upper and lower rough surfaces of the corrosion aluminum foil layer respectively through a magnetron sputtering manner, and upper and lower graphite layers are plated on outer surfaces of the upper and lower metal transition layers respectively through a magnetron sputtering manner. A manufacture method of the solid-state capacitance negative carbon foil includes the following steps of taking corrosion aluminum foil with the upper and lower rough surfaces, subsequently performing sputtering plating of the upper and lower metal transition layers with high affinity to aluminum and graphite on the upper and lower surfaces of the corrosion aluminum foil by means of a magnetron sputtering manner under a vacuum condition, and finally performing sputtering plating of a graphite layer on the outer surfaces of the upper and lower metal transition layers through a magnetron sputtering manner again. According to the solid-state capacitance negative carbon foil, the graphite layer is not prone to fall off, and the solid-state capacitance negative carbon foil has the advantages of being long in service life, large in electric capacity, low in leakage rate, small in impedance, and the like.

The invention discloses a 5G signal transmitter capacitor forming foil multi-stage oxidation treatment process and a production line thereof. The process includes at least one-stage forming, two-stage forming, three-stage forming, four-stage forming, and five-stage forming five-stage forming processes of aluminum foil, wherein : Both primary and secondary formation are carried out in an aqueous solution containing oxalic acid, phosphoric acid and ammonium dihydrogen phosphate; tertiary formation is carried out in an aqueous solution containing ammonium dihydrogen phosphate, boric acid and ammonium pentaborate. Both the quaternary formation and the 5th formation are carried out in an aqueous solution containing boric acid and ammonium pentaborate. The first-level to fifth-level chemical formation processes of the production line are carried out in their corresponding liftable tanks, which shortens the man-hours for changing product specifications, and can easily change the reaction time between aluminum foil and the oxidation in the liftable tank. The equipment is easy to operate, saves time and effort, saves energy, and improves the performance parameters of the product, and produces a capacitor that meets the technical requirements of the 5G signal transmitter, and the cost is low.

The invention provides a packaging-free high-luminance LED chip structure and a manufacturing method therefor. The packaging-free high-luminance LED chip structure comprises a GaN-based LED structure and a transparent substrate, wherein the GaN-based LED structure comprises a reflecting mirror, an N type GaN layer, a light-emitting layer, a P type GaN layer, a transparent electrode, a P electrode, an N electrode and a P electrode extraction electrode; the reflecting mirror, the N type GaN layer, the light-emitting layer, the P type GaN layer and the transparent electrode are stacked from the bottom up in sequence; one surface, far from the reflecting mirror, of the GaN-based LED structure is a P surface; the P electrode runs through the transparent electrode and is in contact connection with the P type GaN layer; the N electrode is positioned on the surface of the N type GaN layer or on the surface of the reflecting mirror; one end of the P electrode extraction electrode is connected with the P electrode while the other end runs through the P type GaN layer, the light-emitting layer, the N type GaN layer and the reflecting mirror and extends to the surface of the reflecting mirror; and the transparent substrate is bonded on the P surface of the GaN-based LED structure. The LED chip structure provided by the invention has the advantages of low electric leakage rate, capability of realizing the packaging-free effect, high luminous efficiency and the like.