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Insulation protection flip LED chip structure and manufacturing method thereof

A LED chip and insulation protection technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as poor light extraction efficiency, poor safety and energy saving, and achieve the effects of reducing leakage rate, improving performance, and inhibiting water vapor erosion

Pending Publication Date: 2022-03-08
普瑞(无锡)研发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the shortcomings of the above-mentioned existing flip-chip LED chip structure, such as leakage phenomenon, poor safety and energy saving performance, and poor light extraction efficiency, the applicant provides a flip-chip LED chip structure with reasonable structure and insulation protection and its manufacturing method, which can reduce leakage. rate, improve the yield rate of the chip, and at the same time enhance the light extraction efficiency, enhance the reliability of the long-term use of the device, and inhibit water vapor erosion

Method used

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  • Insulation protection flip LED chip structure and manufacturing method thereof
  • Insulation protection flip LED chip structure and manufacturing method thereof
  • Insulation protection flip LED chip structure and manufacturing method thereof

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Embodiment 1

[0027] The manufacturing method of the insulated and protected flip-chip LED chip structure of the present invention at least includes the following steps:

[0028] Step S1 : growing an LED chip epitaxial structure on the chip substrate 1 , and fabricating a chip current layered structure and N, P metal conductive layers 4 . Chip substrate 1 includes but not limited to sapphire, silicon wafer, silicon carbide wafer or metal. For example, the LED chip epitaxial structure is grown on the chip substrate 1 by using MOCVD equipment (MOCVD, metal organic compound chemical vapor deposition). U-GaN layer, N-GaN layer, multi-quantum well layer and P-GaN layer, or N-GaN layer, multi-quantum well layer and P-GaN layer grown in sequence, the LED chip epitaxial structure covers the chip The entire surface of the substrate 1. MOCVD is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). The current layered structure includes at least a ...

Embodiment 2

[0033] The manufacturing method of the insulation-protected flip-chip LED chip structure of the present invention at least includes the following steps:

[0034] Step S1 : growing an LED chip epitaxial structure on the chip substrate 1 , and fabricating a chip current layered structure and N, P metal conductive layers 4 . Chip substrate 1 includes but not limited to sapphire, silicon wafer, silicon carbide wafer or metal. For example, the LED chip epitaxial structure is grown on the chip substrate 1 by using MOCVD equipment (MOCVD, metal organic compound chemical vapor deposition). U-GaN layer, N-GaN layer, multi-quantum well layer and P-GaN layer, or N-GaN layer, multi-quantum well layer and P-GaN layer grown in sequence, the LED chip epitaxial structure covers the chip The entire surface of the substrate 1. MOCVD is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE).

[0035] Use ALD or PECVD coating technology to depos...

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Abstract

The invention discloses a flip LED chip structure with insulation protection and a manufacturing method thereof, and the flip LED chip structure with insulation protection is characterized in that an LED chip epitaxial structure is grown on a chip substrate, a chip current layering structure and N and P bonding pad regions are manufactured, a compact insulating film is deposited on a sliced chip unit to serve as an insulating protection layer, and the insulating protection layer is formed on the chip substrate. And the insulating protection layer wraps and covers the chip structure except the N and P bonding pad areas, and comprises the front surface, the back surface and the side surface of the chip unit. The surrounding type insulation protection LED chip structure is adopted, the compact insulation film is deposited on the sliced chip unit to serve as the insulation protection layer, the electric leakage rate can be reduced, the yield of the chip can be improved, meanwhile, the light emitting efficiency is enhanced, the reliability of long-term use of a device is enhanced, and water vapor erosion is restrained.

Description

technical field [0001] The invention relates to the field of LED chips, in particular to an insulation-protected flip-chip LED chip structure and a manufacturing method thereof. Background technique [0002] Light-emitting diode (LED) is a solid-state light-emitting device that converts electrical energy into light energy. Among them, GaN-based LED chips have been greatly developed and applied. After the current flip-chip LED chip structure is cut, the insulating layer on the chip substrate only exists on the front or the front and back, which easily leads to leakage at the position without the insulating layer, poor safety and energy saving, and unable to resist water vapor erosion, long-term use reliability is poor, and the light extraction efficiency of existing flip-chip LEDs is low, which needs to be further improved. Contents of the invention [0003] Aiming at the shortcomings of the above-mentioned existing flip-chip LED chip structure, such as leakage phenomenon,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/00H01L33/62
CPCH01L33/005H01L33/62H01L33/44
Inventor 张秀敏
Owner 普瑞(无锡)研发有限公司
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