66results about How to "Reduce spike voltage" patented technology

The present invention provides a capacitor for an inverter of a vehicle comprising a case; a plurality of capacitor unit modules; positive and negative bus plates that are disposed in the case to be connected to the capacitor unit modules; and a power module corresponding to the unit modules, wherein that the unit modules are insulated from each other through an insulating material, and wherein the bus plates each comprise a bus bar that overlaps with the other bus bar and is electrically connected to the power module.

The invention discloses a control device for switching on and switching off a relay and an air conditioner. The control device for switching on and switching off the relay comprises a control unit, a power supply and a relay, wherein the power supply is electrically connected with the relay; a zero-cross detection circuit is connected in parallel between the power supply and the relay and is used for detecting a zero-cross signal of the power supply and transmitting the zero-cross signal to the control unit; the control unit is connected with the signal input end of the relay and is used for switching on or switching off the relay according to the zero-cross signal. According to the control device for switching on and switching off the relay, the zero-cross signal is detected; the relay matched with inductive load is controlled when the power supply cross the zero point, so that the peak voltage generated when the relay is switched on and off can be greatly reduced; meanwhile, according to the control device, a resistance-capacitance absorbing circuit can also be omitted; the miniaturization of a computer board can be facilitated; the cost can be lowered.

The invention relates to a digital intelligent driving device of a high-power IGBT (insulated gate bipolar translator). The digital intelligent driving device comprises a DC / DC (direct-current) conversion circuit, a CPLD (complex programmable logic device) logic control module, an active clamping feedback module, a retreating-protection over-current feedback module and a two-stage di / dt detecting module, wherein the output end of the DC / DC conversion circuit is connected with an undervoltage protection module; the output end of the undervoltage protection module is connected with the CPLD logic control module; and the input end of the CPLD logic control module is connected with a PWM (pulse-width modulation) pulse-width modulator, and the output end of the CPLD logic control module is connected with a variable-gate resistance module. The digital intelligent driving device provided by the invention has the advantages that the protection functions such as power isolation, over-current protection, di / dt and active clamping are integrated, the logic control is realized by adopting the programmable logic device CPLD, the ideal driving performance is achieved by real-time variable-gate resistance driving, and soft shut-off is realized by selecting proper shut-off resistance according to the over-current degree, so that the switching loss is effectively reduced and a Miller effect is weakened.

A switching power supply device includes a full-bridge circuit comprising a plurality of switching devices, a transformer comprising a primary coil and a secondary coil, the primary coil being connected to an output of the full-bridge circuit, and a DC / DC converter comprising a rectifier circuit. The rectifier circuit includes a plurality of diodes and is connected to the secondary coil to rectify a voltage outputted from the secondary coil. A snubber circuit includes a first snubber diode connected to an intermediate point of the secondary coil, a second snubber diode connected in series with the first snubber diode, the second snubber diode being connected to one end of an output capacitor, and a snubber capacitor connected between a node between the first and second snubber diodes and a positive side output of the rectifier circuit.

The invention relates to an anti-surge protection circuit connected between a power supply and electronic equipment. The anti-surge protection circuit comprises a first-stage protection circuit, a second-stage protection circuit and an inductance element, wherein the first-stage protection circuit and the second-stage protection circuit are connected in parallel and instantaneously discharge the surge currents of a signal input end; the inductance element is connected in series between the first-stage protection circuit and the second-stage protection circuit and inhibits the surge currents of the first-stage protection circuit from flowing into the second-stage protection circuit; and the second-stage protection circuit comprises a second voltage dependent resistor and a capacitor. The anti-surge protection circuit not only enables most surges to be discharged on the first-stage protection circuit, but also effectively solves the problems of current following and current leakage of the first-stage protection circuit through the effective matching action of the first-stage protection circuit, the second-stage protection circuit and the inductance element; in addition, spike voltages and clamp voltages which are generated from the first-stage protection circuit are greatly reduced, therefore the surge protection efficiency of the integral protection circuit is enhanced, the service life of the protection circuit is prolonged, and the safety of the protection circuit is greatly enhanced.

A snubber circuit is provided. The snubber circuit includes a transistor structure and a first capacitor. The transistor structure includes a chip package and two pins. The chip package includes a transistor die and a molding compound encapsulating the transistor die. A first pin of the two pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and a second pin of the two pins is electrically connected to a third bonding pad of the transistor die. The first pin or the second pin of the transistor structure is electrically connected to a terminal of the first capacitor.

The invention discloses a thermal battery positive electrode material and a preparation method thereof. Tungsten (molybdenum) metal ions are used as a positive electrode material of an electron acceptor; the main components of the positive electrode material comprise tungsten (molybdenum) sulfide, an additive, an electronic conductive agent, an ion conductive agent and a binder; through steps of ahigh-temperature roasting process, a vacuum-atmosphere replacement roasting process, an additive passivation treatment process, a mechanical activation roasting process, a crushing, sieving and packaging process and the like, the contents of volatile and decomposed impurities are reduced, the stability of the positive electrode material is improved, and the battery safety is improved. The positive electrode material disclosed by the invention is good in thermal stability, high in material utilization rate, small in self-discharge, large in output capacity and long in working time, and is an ideal positive electrode material of a high-capacity long-time thermal battery.

A snubber circuit is provided. The snubber circuit includes a transistor structure and a first capacitor. The transistor structure includes a chip package and two pins. The chip package includes a transistor die and a molding compound encapsulating the transistor die. A first pin of the two pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and a second pin of the two pins is electrically connected to a third bonding pad of the transistor die. The first pin or the second pin of the transistor structure is electrically connected to a terminal of the first capacitor.

The invention discloses a synchronous rectification drive circuit and a synchronous rectification method of a switching power supply, and particularly relates to the synchronous rectification drive circuit and the synchronous rectification method with fly-back topology. Voltage Vds between the drain electrode and the source electrode of a switch tube of the fly-back topology switching power supply is transmitted to the secondary side of the switching power supply through an isolated drive capacitor, the voltage is distributed through the isolated drive capacitor, a grid electrode-source electrode G-S junction capacitor of a synchronous rectification MOS and a common mode capacitor Y, and voltage Vgs which is obtained after voltage distribution is provided for the synchronous rectification MOS for drive. The synchronous rectification drive circuit applied to the switching power supply has the advantages that the circuit is simple, cost is low, the size is small, drive pulse signals have no negative voltage, and the input voltage range of the synchronous rectification drive circuit suitable for the switching power supply is wide.

The invention discloses a current equalizing system of super-power IGBT induction heating equipment. The current equalizing system of the super-power IGBT induction heating equipment comprises a rectifier, at least two full-bridge inverting units arranged between the positive output end of the rectifier and the negative output end of the rectifier in a parallel mode and a resonance branch, and the resonance branch is composed of a resonance inductor and a resonance capacitor, wherein the resonance inductor and the resonance capacitor are connected in a series mode. Isolation inductors capable of isolating alternating current signals when the full-bridge inverting units heat are respectively connected between the full-bridge inverting units and the positive output end of the rectifier and between the full-bridge inverting units and the negative output end of the rectifier. The invention further discloses a full-bridge inverting unit. The current equalizing system of the super-power IGBT induction heating system equipment overcomes the technical defects that due to unbalanced distribution of current in working of a plurality of power appliances which are connected in parallel, the power switch appliances are prone to being damaged, the power switch appliances do not need to be used in a derating mode, therefore, system reliability is improved, and production cost is reduced.

The invention discloses the application of tungsten-molybdenum sulfide in a thermal battery. A thermal battery electrochemical system taking the tungsten-molybdenum sulfide as a positive electrode andmetal lithium and lithium alloy as a negative electrode is adopted, the positive electrode reaction is that tungsten (molybdenum) metal ions receive electrons and are reduced into metal tungsten (molybdenum), and the negative electrode is changed into lithium ions in the mode that free-state lithium loses electrons. Tungsten-molybdenum sulfide is used as a positive electrode; the decomposition temperature of the tungsten-molybdenum sulfide material is high; in the long-time high-temperature discharge process, the self-discharge of a positive electrode material is small, the material utilization rate is high and is 10% or above higher than that of an iron-cobalt-nickel disulfide positive electrode, in the long-time discharge process, the battery discharge is stable, the voltage fluctuationis far less than that of a thermal battery system of the iron-cobalt-nickel-sulfur positive electrode, and the tungsten-molybdenum sulfide is very suitable for a high-voltage-precision component integration system.

Disclosed is a discharging control apparatus of a switching device for an inverter capable of reducing a spike voltage when the switching device is turned off and reducing a turn-off time of the switching device, the apparatus comprising, a fast discharge circuit section configured to provide a discharging path through which a gate voltage of the switching device is fast discharged at a first discharging speed, an idle discharge circuit section configured to provide a discharging path through which the gate voltage of the switching device is idly discharged at a second discharging speed slower than the first discharging speed, and a spike voltage reduction controller configured to control such that the gate voltage is discharged simultaneously via the fast discharge circuit section and the idle discharge circuit section, when the switching device is turned off in the state that a normal current flows in the switching device, so as to reduce a spike voltage and simultaneously fast turn the switching device off.

The invention provides a transformer leakage inductance energy absorption and feedback method. According to the method, PGND and Vin are included, a C0 is electrically connected between the PGND and the Vin; two ends of the C0 are connected with a transformer in parallel; an input circuit of the transformer is connected with a main switch tube Q1 in series, an input circuit of the transformer is provided with a Lleak (transformer parasitic leakage inductance), an output end of the transformer is electrically connected with an SGND, the output end of the transformer is also electrically connected with a Vo, and a D1 is connected between the Vo and the transformer in series. The transformer leakage inductance energy absorption and feedback method provided by the invention has the advantagesthat a simpler circuit design is adopted; compared with an RCD absorption scheme which is widely applied, only several components are added, but the peak voltage on a main switch tube can be reduced by 60%-90%, the full-load efficiency is improved by 0.5%-1%, and the energy conservation and emission reduction effects are very obvious; and compared with active clamping absorption, the design is simple, and expensive and complex special control chips and circuits are not needed.

The non-loss absorber circuit comprises a first diode with cathode connected to input source positive end and anode connected to one end of inductance and capacitor, a second diode with anode connected to input source negative end, a capacitor with another end connected to switch element, an inductance with another end connected to cathode of second diode, and a clamping circuit with one end connected to source positive end and another end connected to second diode cathode to clamp the voltage of second diode on determined voltage when the switch element shuts. This invention decreases spike voltage and loss.

The invention discloses a solid-state relay. The solid-state relay comprises a direct current input positive terminal, a direct current input negative terminal, a direct current output positive terminal, a direct current output negative terminal, a control end positive terminal, a control end negative terminal, an isolating circuit, a driving circuit, a first switch, a second switch, a first diodeand a second diode. A dual-switch and dual-freewheel-diode cross connection way is adopted, energy stored in a load end line cannot be changed suddenly, and a novel path is found for continuous flowof current through freewheel diodes. The energy stored in the load-end line is fed back to a direct-current power grid through the path, thereby realizing lossless energy recovery of energy. Moreover,the product is small in size, low in cost and suitable for high-power occasions.

The invention discloses a five-level H-bridge converter, which is topologically of a five-level H-bridge single-phase output structure, adopts modular design, can form a multi-phase output system, andadopts an absorption loop to effectively reduce voltage spikes and oscillation on a specific switching device. By controlling the switching sequence of the switching devices, in the power-on processof the converter module, a load is connected to a DC bus to carry out segmented pre-charging on a capacitor bank in a circuit, and the current passing through the capacitor bank is prevented from being too large; and when the voltage of each segment of the capacitor bank is detected to reach a preset value, the pre-charging process is ended, the switching tube is controlled to cut off the connection between the load and the DC bus, and the converter enters a normal working mode. In comparison with a circuit topology used by the existing high-voltage five-level converter, the voltage spikes andthe oscillation caused by stray inductance existing in a high-voltage line on a specific switching device can be effectively reduced, capacitor banks in a circuit are effectively pre-charged in a segmented mode, and the voltage of each capacitor bank is controlled.

A transistor structure includes a chip package and two pins, wherein the chip package includes a transistor die and a molding compound encapsulating the transistor die. One of the pins is electrically connected to a first bonding pad and a second bonding pad of the transistor die, and another of the pins is electrically connected to a third bonding pad of the transistor die. The transistor structure may be employed in a snubber circuit to connect an active component or a load in parallel to absorb spikes or noise generated by the active component while the active component is switching at a high frequency. Therefore, the packaging of the transistor structure could simplify the process, reduce size, increase the withstanding voltage, and improve the efficiency and reduce the spike voltage of the power supply of the snubber circuit.

The invention relates to a main circuit breaking method of a circuit breaker and a soft starting circuit breaker. The soft starting circuit breaker comprises an incoming and outgoing line power connection bar, a breaking chamber, a support device and a control device and is characterized in that a static contact and a movable contact are arranged in the breaking chamber, each of the two contacts or one of the contacts comprises a main conductive post and a non-main conductive post, the main conductive post is used for bearing circuit voltage / current transmission operation after the circuit breaker is completely switched off, the non-main conductive post is half-wrapped by the main conductive post and protrudes out of a breaking surface of the main conductive post, the non-main conductive post is provided with an elastic or telescopic structure, a non-linear volt-ampere resistance material is arranged or generated on at least one position on the non-main conductive post, the non-main conductive post at least comprises a connection buffer post, the non-main conductive post is in contact with an opposite contact and then the main conductive post is in contact with the opposite contactwhen the movable contact and the static contact are nearly contacted and closed, and the main conductive post is separated from the opposite contact and then the non-main conductive post is separatedfrom the opposite contact during the separation process of the movable contact and the static contact.

The present invention provides a combined type multi-layer composite electrical connection structure for an inversion device. The structure of a first secondary circuit busbar of the combined type multi-layer composite electrical connection structure is identical to the structure of a second secondary circuit busbar of the combined type multi-layer composite electrical connection structure, and the first secondary circuit busbar and the second secondary circuit busbar are electrically connected with a secondary circuit of the inversion device. The structure of a first middle DC circuit busbar of the combined type multi-layer composite electrical connection structure is identical to the structure of a second middle DC circuit busbar of the combined type multi-layer composite electrical connection structure, and the first middle DC circuit busbar and the second middle DC circuit busbar are connected with DC circuits of a rectifier and an inverter. The first secondary circuit busbar and the first middle DC circuit busbar form a group, the second secondary circuit busbar and the second middle DC circuit busbar form another group, and the two groups are arranged on two ends of a busbar symmetrically. The bus bar is used for the circuit connection of secondary circuits of the first secondary circuit busbar and the second secondary circuit busbar, the DC circuit connection of DC circuits of the first middle DC circuit busbar and the second middle DC circuit busbar, and the circuit connection of the DC circuit and the secondary circuit. The combined type multi-layer composite electrical connection structure for the inversion device has simple and compact structure, is low in cost, is convenient to install, has better heat dispersion performance and the like.

The invention provides a chopper circuit which comprises a power device, an energy storage device and a composite busbar. The composite busbar comprises busbar bodies, terminals and connecting portions, wherein the busbar bodies are in a flat shape, at least two busbar bodies overlap together, the space between every two adjacent busbar bodies is filled with high insulating strength materials so that the two adjacent busbar bodies can be insulated from each other, the terminals are arranged on the busbar bodies and used for being connected with a circuit device, and the connecting portions are arranged on the busbar bodies and used for being connected with a direct-current input end or a chopper output end or the circuit device. The composite busbar at least comprises the first busbar body, the second busbar body and the third busbar body, wherein the first busbar body is connected with a positive electrode of the direct-current input end, the second busbar body is connected with a negative electrode of the direct-current input end, and the third busbar body is connected with the chopper output end. The chopper circuit can reduce stray inductance and spike voltage.

The invention discloses a switching power supply circuit. The first output end of a rectifying and filtering circuit is successively connected with the cathode of a second diode via a first resistor and a second resistor; the anode of the second diode is connected with ground; the first end of the primary coil of a transformer is connected with the first output end of the rectifying and filtering circuit; the second end of the primary coil of a transformer is connected with the ground via a first MOS (metal oxide semiconductor) switching tube and a second MOS switching tube; the base electrode of the first MOS switching tube is connected with the common end of the second resistor; the cathode and the anode of a first diode are respectively connected with the base electrode and the source electrode of the first MOS switching tube; the input end and the output end of the circuit are controlled by PWM (Pulse-Width Modulation) to be respectively connected with the output end of the secondary coil of the transformer and the base electrode of the second MOS switching tube; the second output end of the rectifying and filtering circuit is connected with the ground.

An embodiment of the invention discloses a switch tube control method and device and an inverter that can help solve a problem that voltage stress of a switch tube in the inverter exceeds a permit value in adverse working conditions based on conventional technologies; work reliability of the inverter can be improved, switch-on and switch-off speed of the switch tube can be improved, loss can be reduced, and system efficiency can be increased. The switch tube control method comprises the following steps: a bus voltage value across two ends of a bus connected among a plurality of switch tube bridge arms and a current value of a current flowing through an inductor in a filter circuit are obtained; a current limit value corresponding to the bus voltage value is determined according to a presetcorrespondence relation between a plurality of voltage threshold value sections and current limit values and a voltage threshold value section in which the bus voltage value is positioned; switch tubes in the plurality of switch tube bridge arms are controlled to be switched on or off according to a relation between the current value of the current flowing through the inductor and the current limit value.

The invention discloses a high-frequency voltage transformation and rectification integrated device. According to the device, a rectifier diode is in serial connection with a secondary coil of a high-frequency transformer, the mode that all devices are independent and are connected through copper bars or wires in the prior art is changed, connection without cables or the copper bars of the rectifier diode and the high-frequency transformer is achieved due to ingenious design, and accordingly the high-frequency transformer and the rectifier diode are integrated organically and compactly; a diode is directly connected with an upper shell and a lower shell of a secondary coil assembly and can be cooled through the upper shell and the lower shell, and therefore heat dissipation design of the diode is avoided; meanwhile, by means of the device, four output electrodes at the bottom of the transformer of the original scheme are reduced to two output electrodes, and accordingly the structure of the bottom of the transformer is simplified. Compared with the prior art, the size of the integrated device is greatly reduced.

The present disclosure relates to a novel integrate-and-fire (IF) neuron circuit using a single-gated feedback field-effect transistor (FBFET) to realize small size and low power consumption. According to the present disclosure, the neuron circuit according to one embodiment may generate potential by charging current input from synapses through a capacitor. In this case, when the generated potential exceeds a threshold value, the neuron circuit may generate and output a spike voltage corresponding to the generated potential using a single-gated feedback field-effect transistor connected to the capacitor. Then, the neuron circuit may reset the generated spike voltage using transistors connected to the feedback field-effect transistor.