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39results about How to "Reduce excessive noise" patented technology

A method for constructing industrial knowledge map based on industrial chain

The invention discloses a method for constructing industrial knowledge map based on industrial chain, which relates to the technical field of knowledge map in artificial intelligence. Firstly, the industrial chain is modeled, and then the industrial knowledge map is constructed according to the constructed industrial chain model. The industry knowledge map based on the industry chain established by the technical proposal of the embodiment of the invention can clearly reflect the entity-relation-entity and ' entity-eroperties-attribute value ' between the industry chains and within the industrychains, can facilitate financial researchers to further use knowledge mapping to study industrial chain conduction and event driving to find important events, to analyze information emotion and so on; The construction of industry knowledge map based on industry chain can effectively reduce the problem of excessive noise in the process of industry knowledge extraction, and the cold start problem of knowledge extraction can be avoided by using feature thesaurus to construct entity relationship.The embodiment scheme can realize incremental knowledge learning and effectively reduce the dependenceon professional researchers.
Owner:数据地平线(广州)科技有限公司

NOMA-based Internet of Vehicles resource allocation method

According to the NOMA-based Internet of Vehicles resource allocation method provided by the invention, the access capability of the network can be effectively improved, and the total transmission rateof all users is significantly improved. According to the method, firstly, a clustering concept is introduced, users are merged into clusters by a base station according to geographic positions of VUEusers, and the users in the same cluster can share the same spectrum resource. Then, in order to reduce the co-channel interference of the CUE and the V2V; CUE users and a VUE user cluster sharing the same spectrum resource are determined by adopting a Hungary algorithm, finally, the suboptimal transmitting power of each V2V sender in the VUE user cluster is obtained by adopting particle swarm optimization iterative optimization on the non-convex problem in the VUE user cluster, and the corresponding suboptimal VUE throughput is calculated. According to the method, the NOMA is applied to theV2V unicast users in communication between vehicles, the total throughput of the V2V users reaches the maximum value on the basis of ensuring the service quality of V2I and V2V communication, and a new thought is provided for the V2X resource allocation problem under the NOMA.
Owner:SOUTHEAST UNIV

Back illuminated cascade multiplication avalanche photodiode

ActiveCN107403848AHigh electron ionization rateLarge electron-hole ionization ratioFinal product manufactureSemiconductor devicesPhoton detectionUltraviolet lights
The invention discloses a back illuminated cascade multiplication avalanche photodiode. A buffering layer, an n-type AlxGa1-xN layer, an i-type periodical cascade multiplication layer, an i-type intrinsic absorbing layer and a p-type electrode layer are successively arranged from bottom to top on a substrate. An optical coupling gathering structure is arranged at the periphery of the i-type intrinsic absorbing layer tabletop. According to the back illuminated cascade multiplication avalanche photodiode, through the optical coupling gathering structure, a problem of low effective absorption rate of a periodical cascade multiplication structure in back illumination is effectively settled, and furthermore dimension of a device tabletop is reduced and body leakage current is reduced. According to the back illuminated cascade multiplication avalanche photodiode, a solution for effective operation of a periodical cascade multiplication avalanche photodiode in back illumination is generated. The back illuminated cascade multiplication avalanche photodiode is suitable for large-scale array integration and is suitable for multiple wavebands in ultraviolet light, visible light and near-infrared light, and furthermore can be widely used in weak light detection imaging and single-photon detection imaging.
Owner:INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS

Superconducting transition edge detector and preparation method thereof

The invention relates to the technical field of superconducting electronics, in particular to a superconducting transition edge detector and a preparation method thereof. According to the preparation method provided by the invention, a cut-off layer, a thin film layer, a superconducting material layer, a normal metal strip and/or a normal metal point, a heat sink piece, an absorber and other components are prepared on a substrate in sequence. In the invention, in order to alleviate the problem that a twisted broken line appears at a superconducting transition edge, a normal metal strip grows above a superconducting thin film of a TES detector and some normal metal points are properly added, and in order to reduce the complexity during preparation of the detector and solve the problem of superconductor quenching, an absorber is in direct contact with a superconducting material layer (superconducting thin film), the thickness of a molybdenum thin film is increased when the superconducting thin film is prepared, and the superconducting transition temperature of the detector is regulated and controlled through two sub-layers of the superconducting material layer and three layers of thin films of the absorber.
Owner:SHANGHAI TECH UNIV

Method to reduce excess noise in electronic devices and monolithic integrated circuits

This invention proposes the use of a thermodynamic screen placed under the electronic devices whose excess noise is to be reduced in order to block the transverse currents between said devices and subjacent layers that are responsible for the aforementioned excess noise. For epitaxial layers as those used in Microelectronics, the barrier layer (2) with an opposed doping to the epilayer supporting the devices (4), and the non-doped separating layer (3) form the thermodynamic screen which, embedded between the epilayer (4) and the substrate (1), reduces the aforementioned transverse currents and thus the excess noise of the devices on the epilayer (4) when they are biased. The connection between the ohmic contact (7) of the screen layer (2) with the source (6) of the FET transistors of the epilayer (4) (dashed line) or with their gate (5) removes the thermal noise of the capacitor that existed under those FET transistors and hence, the corresponding excess noise in these devices
Owner:UNIV MADRID POLITECNICA
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