273results about How to "Operational reliability is increased" patented technology

A multi-level semiconductor memory device preferably includes a plurality of wordlines connected to memory cells configured to store multi-level data. A first circuit supplies a temperature-responsive voltage to a selected wordline in order to read a state of a selected memory cell. A second circuit supplies a predetermined voltage to non-selected wordlines. The first circuit preferably includes a semiconductor element that varies its resistance in accordance with temperature. Reliable program-verifying and reading functions are preferably provided despite migration of threshold voltage distribution profiles due to temperature variations.

Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and / or second semiconductor chip and electrically connected to the first through via.

A semiconductor package includes a first package including a first wiring board and at least one first semiconductor chip mounted on the first wiring board, a second package stacked on the first package. The second package includes a second wiring board and at least one second semiconductor chip mounted on the second wiring board. The semiconductor package further includes at least one connection terminal connecting a plurality of signal lines of the first and second wiring boards, respectively, with each other. The semiconductor package further includes at least one ground terminal connecting a plurality of ground lines of the first and second wiring boards, respectively, with each other, and includes a side surface, and a shielding member covering a top surface and a side surface of a structure including the first and second packages and the shielding member is disposed on the at least one ground terminal.

A liquid filter, in particular for the lubricating oil of an internal combustion engine, having a housing with an inlet and an outlet formed from a housing pot having a substantially downwardly open filter element installation opening and a screw-on cover that closes the installation opening, and a filter element arranged in the housing, sealingly separating the inlet from the outlet. The screw-on cover has a drain for residual liquid present in the housing with a round drain opening arranged in the central axis of the housing. A device for opening and closing the drain opening is arranged in the area of the drain and connected to an end disk of the filter element so that it moves relative to the drain opening and opens the drain when the cover is unscrewed.

The present invention discloses a distributed base station system as well as its networking method and base band unit. In this system, the base band unit (BBU) and RF unit (RFU) of the base station are separated, and the RFU is equipped with base band RF interfaces for interconnecting the BBU and transmitting data information, thereby forming the base station. Based on the separation of the BBU from the RFU, the BBU capacity is further divided at the same time, and every unit is also arranged independently. The BBU networking and capacity expansion may be achieved with capacity expansion interfaces and base band RF interfaces provided by BBU interface units in flexible and convenient ways.

A process for controlling an internal combustion engine, in which an actual position of a reciprocating gas valve is detected by a position sensor, a positional deviation is calculated from the actual position and a zero position, a total length change of the reciprocating gas valve is calculated as a function of the temperature of the reciprocating gas valve, a valve clearance of the reciprocating gas valve is determined from the positional deviation and the total length change, and the further operation of the internal combustion engine is determined on the basis of the valve clearance.

After data writing is performed by injecting electrons into a floating gate from a semiconductor substrate of a memory cell, the gate voltage is set at −3 V, and the source voltage, the drain voltage and the substrate voltage are set at 0 V, thereby detrapping the electrons trapped in an oxide film during data writing. The gate voltage (−3 V) is set at a negative voltage value that is smaller in absolute value than the gate voltage (−10.5 V) applied during data erasing.

A nebulizer for a fluid, particularly for medical aerosol treatment is proposed. To allow easier operation and confer improved operational reliability a sealed container holding the fluid is already arranged in the nebulizer when it is supplied and the nebulizer is constructed so that the container is opened inside the nebulizer before or during the first use of the nebulizer. Alternatively, or in addition, the nebulizer is constructed so that the container cannot be replaced, and in particular, cannot be removed.

The present invention relates to a supplementary shelf assembly for a refrigerator. The supplementary shelf assembly of the present invention comprises a pair of support skirts mounted on a ceiling of a storage space and formed with at least two guide slots in front and rear ends thereof; at least two support links each of which includes a connection portion having a length relatively shorter than a distance between the support skirts, support guide portions extending perpendicular from both ends of the connection portion, respectively, and penetration portions extending outwardly and in parallel to the connection portions from ends of the support guide portions and penetrating the corresponding guide slots to be moved along the guide slots, respectively; and a supplementary shelf rotatably supported by the connection portions, and moved forward or rearward of the storage space and then elevated or lowered to be selectively located on a position near the ceiling of the storage space or on a position spaced apart by a predetermined interval from the ceiling of the storage space. According to the present invention, since a front and rear length of the supplementary shelf is equal to that of the main shelf, the storage space can be effectively utilized. Further, since the supplementary shelf is inadvertently swung due to a simple structure during its use, the supplementary shelf assembly can be simply manufactured and assembled. Furthermore, since the accommodation and withdrawal of the supplementary shelf is performed in regular manner, the operational reliability thereof can be improved and storage articles can be stably placed on the supplementary shelf.

An islanding detection apparatus for a distributed generation power system and a detection method therefor operates a power converter to act as a virtual capacitor or inductor at a frequency close to but unequal to that of a utility power system under abnormal condition of the utility power system. When power failure occurs in the utility power system, only the distributed generation power system supplies power to a load so that a load voltage has been changed in at least one of amplitude and frequency which can be immediately detected islanding phenomenon.

A fluid pump includes a housing having a sealed interior space, at least one drive gear mounted in the interior space of the housing for driving a fluid, a first magnetically inductive member coupled to the drive gear, a driving member mounted outside the housing; and a second magnetically inductive member driven by the driving member and located corresponding to the first magnetically inductive member. At least one of the first magnetically inductive member and the second magnetically inductive member is made of magnetic material to provide a magnetic force for mutual attraction therebetween. When the second magnetically inductive member is driven by the driving member, the first magnetically inductive member and the drive gear are turned to drive the fluid through indirect magnetic induction provided by the second magnetically inductive member outside the housing. Leakage of fluid is avoided.

A network disturbance module for a control device of a wind energy installation having a generator driven by a wind rotor and a converter for producing electrical power fed into a network. The module includes a measurement device configured to measure at least one electrical parameter of the network, a detector configured to identify a network disturbance and output a switching signal, and a reference generator configured to produce a substitute reference vector for the converter based on the at least one electrical parameter. The module also includes a fault management unit comprising a fault classifier, the unit being configured to interact with the measurement device, detector, and reference generator such that, in the event of an undervoltage during island operation, a quick-action frequency regulator is activated. The regulator acts on the converter to vary a real-power feed P in the event of a discrepancy in a network frequency.

Disclosed is a bus bar of an EPS motor configured to improve a terminal structure of a bus bar to enable an easy assembly between a stator and the bus bar, whereby assemblage and operational reliability can be enhanced, the bus bar that is connected to a stator coil of the EPS motor, the bus bar including: an insulator made of insulation materials that forms a body of the bus bar; a lower terminal protrusively formed at a lower side of a periphery of the insulator, and connected to the stator coil; and an upper terminal protrusively formed at an upper side of the periphery of the insulator, and connected to the stator coil, whereby the terminals of the bus bar are divided to an upper terminal and a lower terminal to enhance assemblage and operational reliability by further obtaining a broader mutually discrete gap.

There are provided a manufacturing method of a semiconductor device. A manufacturing method of a semiconductor device includes forming a preliminary source stack structure including a first source layer, a first protective layer, a sacrificial layer, a second protective layer, and a second source layer, which are sequentially stacked in the recited order, forming channel layers extending through the second source layer and partially inside the first source layer, and growing a first region of an interlayer source layer from each channel layer, the first region of the interlayer source layer surrounding each channel layer in a region between the first and second protective layers.

A flip-chip LED fabrication method includes the steps of (a) providing a GaN epitaxial wafer, (b) forming a first groove in the GaN epitaxial layer, (c) forming a second groove in the GaN epitaxial layer to expose a part of the N-type GaN ohmic contact layer of the GaN epitaxial layer, (d) forming a translucent conducting layer on the epitaxial layer, (e) forming a P-type electrode pad and an N-type electrode pad on the translucent conducting layer, (f) forming a first isolation protection layer on the P-type electrode pad, the N-type electrode pad, the first groove and the second groove, (g) forming a metallic reflection layer on the first isolation protection layer, (h) forming a second isolation protection layer on the first isolation protection layer and the metallic reflection layer, (i) forming a third groove to expose one lateral side of the N-type electrode pad, (j) separating the processed GaN epitaxial wafer into individual GaN LED chips, and (k) bonding at least one individual GaN LED chip thus obtained to a thermal substrate with a conducting material.

HfO2 films and ZrO2 films are currently being developed for use as capacitor dielectric films in 85 nm technology node DRAM. However, these films will be difficult to use in 65 nm technology node or later DRAM, since they have a relative dielectric constant of only 20-25. The dielectric constant of such films may be increased by stabilizing their cubic phase. However, this results in an increase in the leakage current along the crystal grain boundaries, which makes it difficult to use these films as capacitor dielectric films. To overcome this problem, the present invention dopes a base material of HfO2 or ZrO2 with an oxide of an element having a large ion radius, such as Y or La, to increase the oxygen coordination number of the base material and thereby increase its relative dielectric constant to 30 or higher even when the base material is in its amorphous state. Thus, the present invention provides dielectric films that can be used to form DRAM capacitors that meet the 65 nm technology node or later.

The present disclosure provides a power semiconductor switch series circuit. The power semiconductor switch series circuit includes a plurality of series modules and a system control module. Each series module has a power semiconductor switch; a drive module for driving each power semiconductor switch to be turned on or turned off; a short-circuit detection unit for outputting at least one detection signal; an equalizer circuit; a comparison module for comparing the detection signal with a predetermined threshold, and outputting a short-circuit signal when the detection signal exceeds the predetermined threshold; and a soft turn-off module for receiving the short-circuit signal and outputting a second control signal. The system control module receives the short-circuit signal and outputs a first control signal.

A compact voice information processing device having excellent howling preventing effect, and a wiring system using the same device, which is excellent in function expandability and easy exchangeability, are provided. This processing device has a speaker, a first microphone disposed to face a diaphragm of the speaker, a second microphone disposed outside of an outer periphery of the diaphragm of the speaker, and a signal processing portion for removing an output voice component of the speaker mixed in an output of the second microphone by use of an output of the first microphone. This processing device is preferably used in a wiring system for transmitting information and electric power between plural locations in a building structure.

Discloses is apparatus and methodology for inductively coupling tire rotations related signals to a tire electronics module (200) associated with a tire. The tire electronics module (200) is configured to receive the tire rotation related signals (220) through inductive transmission from a signal transmission module (210) that includes at least a piezoelectric element (212) and a transmitter inductor (216). The signal transmitter module (210) and the tire electronics module (200) may be physically separated from each other and may be separately or collectively encased in a protective coating.

A mobile crane with a carrier and a superstructure which is slewably arranged thereon has a superlift device with an SL counterweight for increasing lifting capacity. The SL counterweight can be lifted from the ground in order to execute slewing movements of the superstructure and its slewing radius is changeable. The crane has an electronic control device with a computing device and with a display. In order to avoid costly conversion work on the SL counterweight and to increase operating safety, a program is stored in the electronic control device, which program determines a permissible operating field for crane parameters from the parameters comprising load size and load radius, size of SL counterweight and SL counterweight radius while taking into account the stability criteria and capacity criteria of the mobile crane and displays this operating field graphically on the display. Within this operating field, these parameters may be safely changed, the rest of the parameters remaining constant, and the lifting of the SL counterweight from the ground can be ensured.

The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.

Disclosed is a process for the upgrading of heavy oils and bitumens, where the total feed to the process can include heavy oil or bitumen, water, and diluent. The process can include the steps of solvent deasphalting 110 the total feed 105 to recover an asphaltene fraction 116, a deasphalted oil fraction 118 essentially free of asphaltenes, a water fraction 112, and a solvent fraction 114. The process allows removal of salts from the heavy oils and bitumens either into the aqueous products or with the asphaltene product.

Disclosed herein are an oil separator and a cooling-cycle apparatus using the oil separator. To a casing of the separator is connected an inflow tube to supply gaseous refrigerant and oil into the casing for allowing them flowing in a swirl pattern, thereby being separated from each other in a cyclone separation manner. Such a separation manner results in an improved oil separation efficiency.