87results about How to "Increase current capacity" patented technology

A battery pack rechargeable by a magnetic induction effect incorporates a secondary coil electromagnetically coupled to a primary coil of a battery charger and a secondary battery rechargeable by electric power induced to the secondary coil. The secondary battery is in a form of a thin battery having a larger width than a thickness, and two opposing surfaces of the secondary battery are composed of a first flat surface and a second flat surface. The secondary coil is in a form of a planar coil with a wire material being spirally coiled in the plane. In the battery pack, the secondary coil in the form of the planar coil is fixedly layered on the first flat surface of the thin battery.

In a power supply voltage converting circuit using a charge pump circuit having a switch device (Nch MOS transistor Qn(12) and Pch MOS transistor Qp(12)) in an output unit, a first clamp circuit (13) diode-clamps a switching pulse voltage (control pulse voltage) for the switch device at the time of starting the power supply voltage converting circuit, and a second clamp circuit (16) clamps the switching pulse voltage at a ground level (negative side circuit power supply potential) on the basis of a clamp pulse obtained by using an output voltage Vout at the time of an end of the starting process. A sufficient driving voltage is thereby provided for the Pch MOS transistor Qp(12) in particular. Thus, a power supply voltage converting circuit that can obtain a high current capacity on a small-area circuit scale, a control method thereof, a display apparatus having the power supply voltage converting circuit as a power supply circuit, and a portable terminal having the display apparatus are provided.

A heatable window (e.g., vehicle windshield) includes a heatable layer including one or more conductive layers. The heatable layer may be a single layer conductive coating, or alternatively may be a multi-layer heatable coating including one or more dielectric layer(s) in addition to one or more heatable conductive layer(s). Bus bars are provided so that a voltage may be applied across at least one conductive layer of the coating, in order to heat the layer so that the coating generates heat for defogging, deicing and / or desnowing the window. At least a portion of one of the bus bars includes both an underlying conductive base layer portion, and an overlying conductive braid portion that is conductively attached to the conductive base portion. The braid portion significantly increases the current capacity of the bus bar portion if so desired.

An improved conductive busbar assembly and power distribution track utilizing the improved conductive busbar assembly. The busbar assembly including an inner component adapted to engage a stab member of a plug-in unit and an outer component disposed about, and in contact with, the inner component. The inner and outer components are both formed from an electrically conductive material. The busbar assembly provides greater current-carrying capacity and permits take-off devices to be installed at any point along the busway run.

An electrostatic protection apparatus is disclosed that has a voltage level supply configured to supply a voltage level to an electrostatic discharge protection device and the electrostatic discharge protection device that protects a semiconductor electronic device from a rapidly increasing incoming current. The voltage level supply comprises: a voltage divider arranged between high and low voltage rails for supplying an intermediate voltage level to the electrostatic protection device such that a voltage drop across at least some devices within the electrostatic protection device is limited by the intermediate voltage level; a detection device for detecting a signal received from said electrostatic discharge protection device indicating the electrostatic discharge protection device has received the rapidly increasing incoming current; a switching device responsive to the signal to switch the voltage level supplied to the electrostatic discharge protection device from the intermediate voltage level to a voltage level of one of the voltage rails.

By operating a driving TFT in a saturation region, luminance is not easily reduced when an EL element is degraded. However, such problems occur as a high voltage, high power consumption, and heat generation. In the case of operating a driving TFT in a saturation region, luminance varies due to a variation of driving TFTs. In view of the aforementioned problems, a high current capacity TFT is used in the high gray-scale and a low current capacity TFT is used in the low gray-scale. The high current capacity TFT can supply a large current with a lower Vgs, therefore, it does not easily operate in a linear region even when Vds is lowered. Thus, a luminance is not reduced easily even when an EL element is degraded, and an operation at a low voltage is realized. The low current capacity TFT supplies current when high Vgs is applied. With high Vgs, an effect of variation in characteristics of TFTs, especially in Vth can be ameliorated.

A surge protection device with small-area buried regions (38, 60) to minimize the device capacitance. The doped regions (38, 60) are formed either in a semiconductor substrate (34), or in an epitaxial layer (82), and then an epitaxial layer (40, 84) is formed thereover to bury the doped regions (38, 60). The small features of the buried regions (38, 60) are maintained as such by minimizing high temperature and long duration processing of the chip. An emitter (42, 86) is formed in the epitaxial layer (40, 84).

New techniques are presented for increased power handling capability for model railroad decoders and other attached electronics when space and cooling limitations exist. Additionally, novel usage of existing electronic voltage measurements permit an improvement in Overcurrent fault detection and recovery. These techniques allow new designs with improved reliability and load current capacity.

The invention discloses a low-heat-resistance packaging structure of a power MOS (Metal Oxide Semiconductor) device, belonging to the technical field of power semiconductor devices. In the invention, the silicon chip flip bridge clip technology and the conventional TO packaging technology are combined, and a flip heat-radiation structure is used so that the heat generated by the power MOS device directly flows to a metal heat sink, the problem of overhigh heat resistance caused by the conventional TO packaging of the power MOS device is solved; the large area contact of the bridge clip technology achieves the reduction of the heat resistance, the increment of the current capacity and the decrement of the parasitic inductance. The low heat resistance packaging structure of the power MOS device, provided by the invention, has the appearance of the conventional TO packaging; the power MOS device with excellent performance is packaged without adding the packaging equipment, but only properly increasing the related equipment of the bridge clip and the flip technique. The low heat resistance packaging structure of the power MOS device, provided by the invention, has about 80% of reducedheat resistance, about two times of increased current capacity and largely reduced parasitic inductance compared with the conventional TO packaging structure through the proving of the actual testing.

A surge protection device with small-area buried regions (38, 60) to minimize the device capacitance. The doped regions (38, 60) are formed either in a semiconductor substrate (34), or in an epitaxial layer (82), and then an epitaxial layer (40, 84) is formed thereover to bury the doped regions (38, 60). The small features of the buried regions (38, 60) are maintained as such by minimizing high temperature and long duration processing of the chip. An emitter (42, 86) is formed in the epitaxial layer (40, 84).

The invention relates to semiconductor wafer encapsulation technique, specifically a heat radiation method of a LED high power tube wafer in LED wafer encapsulation course. The method comprises the steps of: in the course of combining the LED wafer and a wafer base seat, firstly, painting copper tin alloy solder on the wafer base seat evenly, and then, putting the LED wafer tinned on the bottom on the solder, pressurizing and heating up the wafer to the melting point temperature of the tin copper solder, melting down the solder and welding with the tin on the bottom of the wafer, and sticking the wafer on the base seat after the solder and the tin are solidified with the temperature reduction. The invention can achieves the good electric conduction and heat conduction performance for the connection between the wafer and the wafer base seat, therefore effectively prolonging the service life of the wafer.

The invention discloses a high-voltage heavy-current electronic switch, which comprises a transistor circuit, a drive isolation circuit and a drive circuit. The transistor circuit comprises multiple groups of transistors T in series-parallel connection; the drive isolation circuit adopts isolation transformers of the same number as the transistors T in serial connection; the magnetic core of each isolation transformer is an annular magnetic core; the primary sides of all isolation transformers are the same high-voltage lead A resisting voltage of over 10,000 V; the high-voltage lead A continuously passes through the inner rings of all magnetic cores once; the secondary sides of the isolation transformers are multiple leads a1-a6 winding the annular magnetic cores at the same time; and each secondary side drives a transistor T. Through the high-voltage heavy-current electronic switch disclosed by the invention, the voltage and current capacity of an electronic device can be quickly and stably improved, the drive is simple and the cost is low.

Even when the spaces between the gate wiring become wide, a power semiconductor device can be obtained to meet requirements for increased current capacity and higher reliability.The power semiconductor device has an n+ buffer layer 56 provided on the p+ collector layer 55; an n− layer 57 provided on the n+ buffer layer 56; a p base region 58 provided selectively in the top side of the n− layer 57; an n+ emitter region 59 provided selectively in the top side of the p base region 58; a gate insulation film 60 provided on the n− layer 57 and portions of the p base region 58 and the n+ emitter region 59; a gate electrode 1 including a polysilicon film 1a provided on the gate insulation film 60, and a doped polysilicon film that is provided on the polysilicon film 1a and doped with impurities; an emitter electrode that is provided on the p base region58 and is electrically connected with the n+ emitter region 59; a collector electrode provided on the bottom side of the p+ collector layer.

In an embodiment of the invention, a package for high frequency waves mounted by a high frequency electronic circuit comprises an hermetic box-shaped high frequency package containing a high frequency electronic circuit in the inside and shielded by a conductor, an input terminal and an output terminal partly led out to the outside of the high frequency package, an input side feed-through section having one of its opposite ends connected to the input terminal and the other end connected to the high frequency electronic circuit and having a predetermined characteristic impedance; and an output side feed-through section having one of its opposite ends connected to the output terminal and the other end connected to the high frequency electronic circuit and having a characteristic impedance lower than the characteristic impedance of the input side feed-through section as viewed from the output terminal side.

The invention provides an insulated gate type semiconductor device. In the existing structure, the source region and the back gate region are in contact with a common source electrode, and the potentials of the source region and the back gate region cannot be controlled separately. Therefore, when such a MOSFET is used as a bidirectional conversion element, two MOSFETs are connected in series, and a control circuit performs on-off of the MOSFET and control of the parasitic diode, which hinders miniaturization of the device. A source region is provided on the entire surface of the active region, a first back gate region is provided under the source region between the trenches, and a second back gate region connected to the first back gate region is provided outside the source region. The first electrode layer in contact with the source region is provided on the entire surface of the active region, and the second electrode layer in contact with the second back gate region is provided on the outer periphery of the first electrode layer. Potentials can be applied to the first electrode layer and the second electrode layer respectively, and control can be performed to prevent backflow caused by parasitic diodes.

The utility model relates to a method and a power converter for inductance energy conservation current converting shut off thyristor, belonging to the technical filed of power converting. The utility model comprises an inductance energy storing current converting cell HL which consists of an energy storing inductance L, a high-end electric switch Gp, a low-end electric switch Gn and an after-low electric switch Mx; and a main power converting cell ZG which consists of a main thyristor T, an after-flow power diode D and an assistant thyristor T1. when in current converting, the flow path of the energy storing inductance L current IL is controlled through the electric switch of the inductance energy storing current converting cell HL and the assistant thyristor T1 of the main power converting cell ZG, so that the main thyristor T which needs to be shut off by the main power converting cell ZG is arranged reversely to be shut off. As the utility model converts current through a plurality of main power converter cells of a current converter with a multiple structure, the utility model reduces the cost of the inductance energy conservation current converting cell. The utility model is suitable to be used in various large capacity and low cost power converters which are mainly made of thyristors.

The invention relates to an electrode shell of a large submerged arc furnace. The electrode shell comprises cylindrical sections which are sequentially connected, wherein each cylindrical section comprises a cylindrical shell; a plurality of fins which are arranged at equal intervals are arranged in the longitudinal direction of the inner side of the shell, each fin is formed by superposing and fixing two steel plates, a plurality of circular holes the diameters of which are 20mm are arranged between the two steel plates, a branch is arranged at the upper end of each of the two steel plates, and the branch is connected with the lower end of the fin of the cylindrical section at the upper end of the cylindrical section on which the branch is positioned; and fixing rings are respectively fixed inside the upper end and lower end of the shell, and a connecting ring is fixed outside the fixing ring between two adjacent cylindrical sections. In the electrode shell of the large submerged arc furnace provided by the invention, because the upper electrode fins and the lower electrode fins can be connected mutually, the splicing verticality is good. In the electrode shell of the large submerged arc furnace provided by the invention, the internal connection strength, the contact area and the conductive effect which are between the electrode shell and an electrode paste are increased through the plurality of circular holes between the two steel plates of each fin, thus the quantity and width of the fins can be reduced, the consumption of ferrous materials can be reduced, and the pollution on products caused by impurities is lowered in the using process.

A display device has a display panel and a backlight unit. The backlight unit includes first and second light source units, and a control unit that outputs a drive signal to the light source units to drive the first and second light source units during first and second drive periods in one frame period respectively. The control unit drives the light source units so that the one frame period has an overlapped period, in which the first and second drive periods overlap. The control unit outputs PWM signals to turn the light source units on and off to the light source units respectively. The control unit shifts a phase of the PWM signal to be outputted to the first light source unit and a phase of the PWM signal to be outputted to the second light source unit from each other.

The invention provides a bus electrode framework, a thermosensitive printing head and a preparation method of the thermosensitive printing head. The bus electrode framework comprises a base plate, a bus electrode, a heating resistor, a heating resistor protective layer and a bus electrode protective layer. The bus electrode is arranged on the base plate, the heating resistor and the bus electrodeare transversely arranged on the base plate together, and the heating resistor is covered with the heating resistor protective layer. The bus electrode is covered with the bus electrode protective layer, the thickness of the bus electrode is larger than that of the heating resistor, and the upper surface of the bus electrode and the upper surface of the heating resistor are located on the same plane. The plane where the lower surface of the bus electrode is located is lower than the plane where the lower surface of the heating resistor is located, the thickness of the bus electrode is increased, and the position and the structure of the bus electrode protective layer above the bus electrode do not need to be changed, so that the size of the thermosensitive printing head is not increased; and the abrasion resistance of the bus electrode protective layer and the heating resistor protective layer can further be improved, and the lives of the bus electrode and the heating resistor are prolonged.

The invention discloses a different-plane structure GaAs photoconductive switch based on a graphene interface layer and a preparation process of the different-plane structure GaAs photoconductive switch. Contact electrodes are arranged on the upper surface and the lower surface of the GaAs substrate, the two contact electrodes are respectively used as an anode and a cathode of the GaAs photoconductive switch, external electrodes are arranged on the surfaces of the two contact electrodes, graphene layers are arranged between the two contact electrodes and the GaAs substrate, the upper surface of the GaAs substrate is further covered with a passivation layer, and the contact electrodes are sequentially provided with a Ni layer, a Ge layer, an Au layer, a Ni layer and an Au layer in the direction from the graphene layers to the external electrodes. High-quality graphene is transferred to the target substrate, and then the surface of the target substrate is plated with metal to form a gallium arsenide-graphene-metal composite structure, so that an electric field is homogenized, current is not concentrated, generated heat is relatively less, and the method plays a great role in heat dissipation and service life of a device.

The invention relates to the field of a diode production technology, in particular to a fabrication method of a rectifier diode. The method comprises the steps of silicon wafer ultrasonic sanding, silicon wafer cleaning, quartz frame and quartz lead cleaning, diffusion, detection and diffusion source fabrication. The method is characterized in that a primary perfect diffusion technology of liquid phosphorus, boron and platinum sources is adopted, the optimization distribution of the minority carrier lifetime is realized with the absorption of phosphorosilicate glass, the open pipe diffusion is adopted, the temperature of a diffusion furnace is 1249-1251 DEG C, the diffusion time is 12-15h, the phosphorus source, the boron source and platinum micropowder are placed in, and a P-type area requires that R P=1.1-1.3R / ohm and XjP=87-93 micrometers. Compared with the prior art, the method has the benefits that 1), the uniformity of surface concentration of a silicon wafer is improved and 20-22h is shortened compared with a paper source diffusion technology, and 2), the service life is increased by about 1500h compared with a common diode.

In an embodiment of the present invention, an ionizer and an electrostatic charge eliminating system are provided in which optional functions can be operated without increasing a current consumption when a timing of operating the optional functions is shifted in a case where a plurality of ionizers having optional functions such as a cleaning function are simultaneously used or an ionizer having a plurality of optional functions is used. According to an embodiment of the present invention, an ionizer includes: control portion 7; cleaning portion 10 operated when a command is given from control portion 7; first timer 5 for measuring a waiting time from a time at which a power source is turned on to a time at which cleaning portion 10 executes an operation at a first time; and second timer 6 for measuring a cycle time so that cleaning portion 10 can repeatedly execute the operation at a second time or later by a predetermined cycle time.

The invention discloses an automobile electronic regulator and an operating method thereof, and belongs to the technical field of automobile electronics. The automobile electronic regulator comprisesan electronic regulating circuit which consists of an ASIC chip, a power tube and an auxiliary electronic component; the electronic regulating circuit is mounted on a ceramic-based thick film circuitboard; the ASIC chip is an ANC8001 type special multifunctional automobile voltage regulator chip; the power tube is an IGBT power tube; an aluminium profile heat dissipation sheet is glued below theceramic-based thick film circuit board; the ceramic-based thick film circuit board is glued on the aluminium profile heat dissipation sheet through heat dissipation glue; and the surface of the aluminium profile heat dissipation sheet is statically coated with a graphene coated film. The IGBT power tube is initially adopted for improving the current capacity of the power tube; by matching the overload protection function and cooling operation method of the ASIC chip, the automobile electronic regulator is protected, and the problem of heat dissipation is solved; and by virtue of the aluminiumprofile heat dissipation sheet and the graphene coated film, the heat dissipation capability of automobile electronic regulator is improved, and safe and reliable regulation of a high-power automobilegenerator can be achieved.

An electrical connector comprising a plug arranged and designed to connect to a receptacle. The plug includes an electrically-insulating body, a conductor ring, and a conductive member connected to the plug conductor ring. The receptacle includes an electrically-insulating body, a conductor ring having an axial inner bore and an annular groove facing radially inward, a conductive member connected to the receptacle conductor ring, and an electrically-conductive contact having a generally annular profile, at least a portion of the electrically-conductive contact received in and contacting the annular groove and at least a portion of the electrically-conductive contact not received in the annular groove. Upon insertion of the plug into the receptacle and substantially radially aligning the plug and receptacle conductor rings, the electrically-conductive contact is elastically deformed and provides electrical contact between the plug conductor ring and the receptacle conductor ring.