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2794 results about "Voltage divider" patented technology

In electronics, a voltage divider (also known as a potential divider) is a passive linear circuit that produces an output voltage (Vₒᵤₜ) that is a fraction of its input voltage (Vᵢₙ). Voltage division is the result of distributing the input voltage among the components of the divider. A simple example of a voltage divider is two resistors connected in series, with the input voltage applied across the resistor pair and the output voltage emerging from the connection between them.

Switch circuit and method of switching radio frequency signals

A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP

Adaptive impedance matching apparatus, system and method with improved dynamic range

An embodiment of the present invention provides an apparatus, comprising an RF matching network connected to at least one RF input port and at least one RF output port and including one or more voltage or current controlled variable reactive elements; a voltage detector connected to the at least one RF output port via a variable voltage divider to determine the voltage at the at least one RF output port and provide voltage information to a controller that controls a bias driving circuit which provides voltage or current bias to the RF matching network; a variable voltage divider connected to the voltage detector and implemented using a multi-pole RF switch to select one of a plurality of different resistance ratios to improve the dynamic range of the apparatus; and wherein the RF matching network is adapted to maximize RF power transferred from the at least one RF input port to the at least one RF output port by varying the voltage or current to the voltage or current controlled variable reactive elements to maximize the RF voltage at the at least one RF output port.
Owner:NXP USA INC

Adjustable over current protection circuit with low power loss

Disclosed is an adjustable over current protection circuit which advances the timing of enabling an over current protection mechanism according to an input voltage, therefore the delay problem resulting from the non-instant response of the over current protection circuit is compensated with a low power loss. The over current protection circuit includes a voltage divider, a voltage-to-current converting circuit, an adjusting circuit and a comparing circuit. The voltage divider divides an input voltage to generate an adjusted input voltage, and the adjusted input voltage is converted into an adjusted input current by the voltage-to-current converting circuit. The adjusting circuit then adjusts a current sensing voltage according to the adjusted input current to generate an adjusted current sensing voltage. Finally, the comparing circuit compares the adjusted current sensing voltage with a predetermined over current protection reference voltage to selectively enable the over current protection mechanism according to a comparison result.
Owner:LEADTREND TECH

A digital high voltage DC power

The utility model relates to a digitized high voltage direct current power supply, and comprises a main power circuit, a digitized control circuit based on DSP and a control program of host computer based on PC, wherein the main power circuit comprises a three phase rectifying element [1], a soft start element [2], a filter element [3], a resonance inverting element [4], a high frequency and high voltage transformer [5], a doubling circuit [6] and a two-stage voltage divider [7]; the digitized control circuit based on DSP comprises an interface circuit of IPM drive signal, a high voltage feedback element, a resonance overcurrent protection element, a soft start circuit and a serial communication interface circuit. The voltage of power frequency electrical network is converted into DC voltage which is used as busbar voltage by three phase rectification, soft start and filter, and the busbar voltage is converted into 20KHz quasi-sine-wave by the resonance inverting element which is driven by a phase difference computed by the DSP according to feedback signal, and then 0-100Kv AC high voltage is output by the high frequency and high voltage transformer [5] and the doubling circuit [6]. The utility model adopts a host computer as a control device, and outputs the voltage via the control instructions of the DSP, therefore meets the requirements of voltage withstand test of insulation material.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI

Switch circuit and method of switching radio frequency signals

InactiveUS20050017789A1Improving RF switch isolationRaise the compression pointTransistorSolid-state devicesMOSFETEngineering
A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP
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