85results about How to "Increase channel area" patented technology

The present invention provides a display device which can display characters clearly and display images smoothly. An area gray scale method is adopted and a configuration of one pixel is changed depending on a mode, by selecting one or more display regions in each pixel. When characters are needed to be displayed clearly, one pixel is configured by selecting a stripe arrangement. Thus, clear display can be conducted. When images are needed to be displayed, one pixel is configured by selecting an indented state. Thus, smooth display can be conducted.

To provide a display device whose display can be recognized even in dark places or under the strong outside light. The display device performs display by controlling the number of gray scales in accordance with the intensity of outside light, which means a display mode can be switched in accordance with the data to be displayed on the display screen. A video signal generation circuit is controlled in each display mode in such a manner that it directly outputs an input video signal with an analog value, outputs a signal with a binary digital value, or outputs a signal with a multivalued digital value. As a result, gray scales displayed in pixels are timely changed. Accordingly, clear images can be displayed while maintaining high visibility in various environments, in the wide range from, for example, dark places or indoors (e.g., under a fluorescent lighting) to outdoors (e.g., under the sunlight).

A blower system which is easy to maintain and obtains motor cooling air from the inside of the spiral casing, that is, a blower system wherein the blower case and the motor holding housing are comprised as separate members, the spiral casing is provided with an enlarged part enlarged in an axial direction to an opposite side from the suction port from the centrifugal type blower fan, the motor holding housing is provided with a holder storing and holding the motor, an extension extended from the holder in a diametrical direction of the fan, a circumferential wall formed connected with the extension and forming an inner circumferential wall of the enlarged part in the spiral casing, and a cooling air passage provided between the holder and the circumferential wall and guiding part of the air circulating inside the spiral casing as cooling air to the motor, and the cooling air passage has an inlet opening into which air flows from the spiral casing and having an outlet opening provided at the circumferential wall and out of which air flows to the motor.

A vertical channel transistor array includes a plurality of embedded bit lines, a plurality of bit line contacts, a plurality of embedded word lines, and a current leakage isolation structure. An active area of a vertical channel transistor is defined by the semiconductor pillars. The embedded bit lines are disposed in parallel in a semiconductor substrate and extended in a column direction. Each of the bit line contacts is respectively disposed at a side of one of the embedded bit lines. The embedded word lines are disposed in parallel above the embedded bit lines and extended in a row direction. Besides, the embedded word lines and the semiconductor pillars in the same row are connected but spaced by a gate dielectric layer. The current leakage isolation structure is disposed at ends of the embedded bit lines to prevent current leakage between the adjacent bit line contacts.

There is provided a multicylinder four-cycle combustion engine, in which a communication hole is formed, to allow gases to flow smoothly form one cylinder to another so that the pumping loss occurring within the cylinders can be reduced. The combustion engine (E) includes an engine casing (EC) having defined therein a plurality of cylinders (2A to 2D), each having a cylinder bore (20A to 20D), and a crank chamber (30A to 30D) below the respective cylinder bore. A partition wall (21) separating the neighbor cylinder bores (20A, 20B; 20C, 20D) of the cylinders (2A to 2D) and the crank chambers (30A to 30D) from each other is formed with a communication hole (4). An open edge portion (4aa) of the uppermost edge (4a) thereof, which opens into the cylinder bore (20A to 20D) has a circumferentially intermediate major portion extending in a direction substantially perpendicular to the cylinder longitudinal axis (CH).

The semiconductor device having a recess channel transistor includes a device isolation structure formed in a semiconductor substrate to define an active region having a recess region at a lower part of sidewalls thereof and a recess channel region formed in the semiconductor substrate under the active region. A method for fabricating the semiconductor device includes forming a device isolation structure in a semiconductor substrate to form an active region having a recess region at a lower part of sidewalls thereof, a gate insulating film formed over the semiconductor substrate including the recess channel region, and a gate electrode formed over the gate insulating film to fill up the recess channel region.

The present invention provides structures and methods for providing facets with different crystallographic orientations than what a semiconductor substrate normally provides. By masking a portion of a semiconductor surface and exposing the rest to an anisotripic etch process that preferentially etches a set of crystallographic planes faster than others, new facets with different surface orientations than the substrate orientation are formed on the semiconductor substrate. Alternatively, selective epitaxy may be utilized to generate new facets. The facets thus formed are joined to form a lambda shaped profile in a cross-section. The electrical properties of the new facets, specifically, the enhanced carrier mobility, are utilized to enhance the performance of transistors. In a transistor with a channel on the facets that are joined to form a lambda shaped profile, the current flows in the direction of the ridge joining the facets avoiding any inflection in the direction of the current.

The present invention provides structures and methods for providing multiple parallel V-shaped faceted grooves with sub-lithographic widths on a semiconductor substrate for enhanced performance MOSFETs. A self-aligning self-assembling material is used to pattern multiple parallel sub-lithographic lines. By employing an anisotropic etch that produces crystallographic facets on a semiconductor surface, multiple adjoining parallel V-shaped grooves with sub-lithographic groove widths are formed. While providing enhanced mobility for the MOSFET, the width of the MOSFET is not limited by the depth of focus in subsequent lithographic steps or the thickness of semiconductor layer above a BOX layer due to the sub-lithographic widths of the V-shaped grooves and the consequent reduction in the variation of the vertical profile. Also, the MOSFET has a well defined threshold voltage due to the narrow widths of each facet.

Disclosed herein is an impact sensitive damper damping vibration transferred from a road surface to a vehicle, and more particularly, to an impact sensitive damper in which handling stability may be achieved in a low speed operating section of the damper and improvement of ride comfort may be achieved in a high speed operating section thereof. According to an exemplary embodiment of the present invention, there is provided an impact sensitive damper improving ride comfort by decreasing damping force when impact is applied to a vehicle, the impact sensitive damper including: a body valve body having compression channels and expansion channels formed therein; a fastener vertically penetrating through the body valve body; a dish shaped spring interposed between an upper portion of the body valve body and the fastener; and a disk shaped spring interposed between a lower portion of the body valve body and the fastener, wherein at the time of compression stroke when the impact is applied to the damper, the fastener is relatively displaced with respect to the body valve body due to elastic deformation of the dish shaped spring, such that the disk shaped spring and the lower portion of the body valve body are spaced apart from each other, thereby increasing a channel area of operating fluid.

The invention relates to a generator set shock absorption and noise reduction method based on noise source recognition. The method comprises the steps that a preset noise source is collected, a presetmatrix is established, and a noise reduction plan is preset; a noise detection module is arranged, and a noise monitor is connected with the corresponding position of the generator set; operating thegenerator set, detecting noise and establishing a detection matrix; comparing the detection matrix with a preset matrix; and selecting a corresponding noise reduction plan according to the detectionresult. According to the invention, different types of standard noise sources are pre-recorded; taking the noise source as a judgment reference; according to the method, the preset matrix is set to store the specified parameters in the noise into the sound source library, the types of the detected noise can be accurately judged by sequentially comparing the detected noise with the preset noise, the specific noise reduction method is used in a targeted mode according to the types of the noise, and the shock absorption efficiency of the method on the generator set can be effectively improved.

A semiconductor radiation detector comprises a bulk layer of semiconductor material, and on a first surface of the bulk layer in the following order: a modified internal gate layer of semiconductor of second conductivity type, a barrier layer of semiconductor of first conductivity type and pixel dopings of semiconductor of the second conductivity type. The pixel dopings are adapted to be coupled to at least one pixel voltage in order to create pixels corresponding to pixel dopings. The device comprises a first conductivity type first contact. Said pixel voltage is defined as a potential difference between the pixel doping and the first contact. The bulk layer is of the first conductivity type. On a second surface of the bulk layer opposite to the first surface, there is nonconductive back side layer that would transport secondary charges outside the active area of the device or function as the radiation entry window.

Provided is an air blowing device capable of keeping an air outlet invisible to the extent possible without impairing a function as the air blowing device. An air blowing device (10) includes: a tubular body (21) defining an airflow passage (21a) and an air outlet (21b); a guide wall (31) for guiding an airflow having passed through the air outlet in an intended direction; and a flow velocity adjusting mechanism (valve body) (22) capable of adjusting a flow velocity of the airflow passing through the air outlet. The guide wall has a convex surface shape protruding in a direction intersecting with a forward direction of the air outlet, and is arranged so that a projection image, which is obtained by projecting the guide wall onto an imaginary plane including the air outlet, covers the entire air outlet. The flow velocity adjusting mechanism is configured to adjust the flow velocity in accordance with the intended direction.

The invention discloses a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the following steps: providing a substrate with a first area; forming a sacrificial layer on the surface of the substrate; forming a one-dimensional nanostructure on the surface of the sacrificial layer; removing a part of the sacrificial layer to enable the central portion of the one-dimensional nanostructure to be suspended, the two ends of the one-dimensional nanostructure being disposed at the surface of the residual sacrificial layer; forming a first grid structure encircling the one-dimensional nanostructure at a part of the surface of the one-dimensional nanostructure on the first area; and forming a first source contact layer and a first drain contact layer on the one-dimensional nanostructure at the first area at the two sides of the first grid structure. According to the method provided by the invention, a transistor with quite high performance and integration can be formed.

A liquid ejecting head includes a plurality of stacked substrates that include a nozzle substrate having a nozzle from which liquid is ejected. A channel is formed in at least a part of the substrates and guides the liquid to the nozzle. The channel includes: a first channel that extends in an X direction intersecting a stacking direction in which the substrates are stacked; a curved section curved in a Z direction that intersects the X direction and contains a component of the stacking direction; and a second channel that extends from the curved section in the Z direction. A wall is formed in a corner portion inside the channel so as to intersect both the X and Z directions, and the corner portion is formed in the curved section between the inside walls of the first and second channels.