Semiconductor structure and formation method thereof

Abstract

The invention discloses a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises the following steps: providing a substrate with a first area; forming a sacrificial layer on the surface of the substrate; forming a one-dimensional nanostructure on the surface of the sacrificial layer; removing a part of the sacrificial layer to enable the central portion of the one-dimensional nanostructure to be suspended, the two ends of the one-dimensional nanostructure being disposed at the surface of the residual sacrificial layer; forming a first grid structure encircling the one-dimensional nanostructure at a part of the surface of the one-dimensional nanostructure on the first area; and forming a first source contact layer and a first drain contact layer on the one-dimensional nanostructure at the first area at the two sides of the first grid structure. According to the method provided by the invention, a transistor with quite high performance and integration can be formed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the continuous development of semiconductor technology, high integration, multi-function and low power consumption are the main goals pursued by semiconductor devices. The size of semiconductor devices continues to shrink with the development of technology, making chips more and more integrated. However, as the size of semiconductor devices continues to shrink, problems such as short channel effects, leakage currents, and increased power consumption become more and more significant. At the same time, more challenges are faced in device structures and manufacturing processes. As a result, further improvement of chip integration is subject to more restrictions. [0003] In the prior art, the above-mentioned problems can be solved or alleviated to a certain extent by changing the chan...

AI Technical Summary

Problems solved by technology

However, as the size of semiconductor devices continues to shrink, problems such as short channel effects, leakage currents, and increased power consumption become more and more significant. At the same time, more challenges are faced in device structures and manufacturing processes.

As a result, further improvement of chip integration is subject to more restrictions

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