The invention belongs to the technical field of memory, and relates to a 2T dynamic memory unit based on a resistive gate medium, an array structure and an operation method thereof. The present invention includes a write tube, a read tube, a storage unit, a write word line, a write bit line, a read word line, and a read bit line; the source end of the write tube is connected to the gate of the read tube, and the write tube It has the function of programming, and the gate medium of the reading tube is a storage part; the gate medium has three different states of insulation, high resistance, and low resistance, among which the transition between high resistance and low resistance is reversible, and when reading, it is read into the tube grid. A certain voltage is applied to the electrode and the read word line, and "0" and "1" can be judged according to the voltage change or current value of the read bit line. The invention has the advantages of simple process, low cost, superior effect, low power consumption and high performance, and is compatible with the front end of 32nm High k CMOS logic process.