The invention belongs to the technical field of memory, and relates to a 2T dynamic memory unit based on a resistive gate medium, an array structure and an operation method thereof. The present invention includes a write tube, a read tube, a storage unit, a write word line, a
write bit line, a read word line, and a
read bit line; the source end of the write tube is connected to the gate of the read tube, and the write tube It has the function of
programming, and the gate medium of the reading tube is a storage part; the gate medium has three different states of insulation,
high resistance, and
low resistance, among which the transition between
high resistance and
low resistance is reversible, and when reading, it is read into the tube grid. A certain
voltage is applied to the
electrode and the read word line, and "0" and "1" can be judged according to the
voltage change or current value of the
read bit line. The invention has the advantages of simple process, low cost, superior effect, low
power consumption and high performance, and is compatible with the front end of 32nm High k
CMOS logic process.