The invention relates to the
silicon film material preparation filed, and concretely relates to a method for preparing a nanometer
silicon film through an intermediate-frequency magnetron
sputtering process, and its special device. The method comprises the following steps:
sputtering non-equilibrium state twin magnetron
silicon targets forming a
coupling magnetic field with an applied solenoid by adopting an intermediate-frequency power supply to excite a
plasma through utilizing the intermediate-frequency magnetron
sputtering process; depositing a nanometer silicon film on a substrate, wherein sputtering of an Ar gas is adopted, the pressure is measured by an
ionization gauge, the pressure is controlled between 0.2 and 1.5 in the whole
deposition process, the current of the applied solenoid is 0-6A, and the deposition time is 30-90min; evacuating a
vacuum chamber to 10<-3>-10<-4>Pa through adopting a
vacuum pump group; and heating the substrate to 400-500DEG C to obtain the nanometer silicon film. In the invention, the applied solenoid is adopted to continuously adjust the nonequilibrium degrees of the twin targets, so high-rate
ion auxiliary deposition of the nanometer silicon film under low power is realized, the
crystal structure of the film is controllable in a
large range, and the optical
band gap is adjustable.