33results about How to "Improve Outcoupling Efficiency" patented technology

Embodiments of the invention can provide organic light-emitting devices (OLEDs) with enhanced outcoupling efficiency. Specific embodiments can enhance the outcoupling efficiency by more than four times. Embodiments of the invention incorporate microlens 5 arrays on the emitting surface of a top-emission OLED. Incorporation of microlens arrays on the emitting surface of a top-emission OLED can greatly enhance the outcoupling efficiency in OLEDs. With a microlens array attached to the emitting surface, much of, if not all, of the waveguiding modes can be extracted. The microlens array can be fabricated using the inkjet printing method or using other methods, including molding.

A device emits radiation at a predetermined wavelength. The device includes a light-emitting structure which generates the radiation. The device further includes at least one reflective edge in radiative communication with the light-emitting structure, the reflective edge having a dielectric portion. The device further includes at least one electrical contact extending through the dielectric portion of the reflective edge, the contact in electrical communication with the light-emitting structure.

An organic EL display includes an organic EL element which includes first and second electrodes and an active layer interposed therebetween and including an emitting layer, and an outcoupling layer facing the first electrode. The organic EL element forms a waveguide layer which includes the first electrode and the active layer and in which light components from the emitting layer propagate in an in-plane direction while causing multiple-beam interference. A distance between the outcoupling layer and the waveguide layer is shorter than a wavelength of light from the organic EL element. A guide length x, a number of reflection m, an absorption coefficient α, and an outcoupling efficiency β satisfy a relationship represented by an inequality:β⁢∑M=1m⁢(1-β)M-1exp⁢{α⁡(2⁢M-1)⁢x}>0.1.

The present invention relates to an organic charge transport layer having a low refractive index, and to an organic EL device, an organic semiconductor device, and an organic photoelectric device which are provided with the organic charge transport layer. An object of the present invention is to provide an organic semiconductor thin film having a dramatically reduced refractive index without impairing conductivity, by mixing a predetermined amount of an electret material into an organic semiconductor material. The organic charge transport layer according to the present invention is characterized by containing an organic semiconductor material and an electret material. It is preferable that the organic semiconductor material is a hole transport material and the electret material has a refractive index of 1.5 or lower.

A reflective electrode, a method of manufacturing the reflective electrode, and an organic light emitting diode display including the reflective electrode are disclosed. The reflective electrode includes a first transparent conductive layer formed of a transparent conductive material, a reflective layer disposed on the first transparent conductive layer and including a plurality of grains formed of a reflective material, and a second transparent conductive layer disposed on the reflective layer and formed of a transparent conductive material. The adjacent grains are spaced from each other.

An organic light emitting device having increased outcoupling efficiency, a lighting apparatus including the organic light emitting device, and an organic light emitting display apparatus including the organic light emitting device. The organic light emitting device includes a substrate, a first electrode layer that is uniformly patterned on the substrate, a low refractive conductive layer disposed on the first electrode layer, and having a conductive material with a lower refractive index than a refractive index of an organic layer that is disposed on the low refractive conductive layer, and a second electrode layer formed on the organic layer.

In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track partially runs on one of the side faces.

The invention relates to a white organic electroluminescence device realized by adopting a color conversion injection layer and a manufacturing method thereof. The white organic electroluminescence device consists of an indium tin oxide glass substrate (1), the color conversion injection layer (2), a hole transmission layer (3), a luminescent layer (4), an electronic transmission layer (5) and a composite cathode layer (6). The manufacturing method of the device comprises the steps of: preparing the color conversion injection layer (2) on the indium tin oxide glass substrate in a rotary coating manner, and then evaporating the hole transmission layer (3), the luminescent layer (4), the electronic transmission layer (5) and the composite cathode layer (6) in sequence. In the device, the structure is simple, only a single blue-light luminescent material is needed, and the color conversion layer is excited to emit red light, so that white light is realized. The white organic electroluminescence device has the advantages that the chromaticity is stable, the efficiency is high and the cost is low.

The invention discloses a preparation method of an annular cavity surface-equipped and difference frequency terahertz-emitting quantum cascading laser structure. The preparation method comprises the following steps of 1, enabling a lower waveguide layer, a lower optical limiting layer, a first active layer, an interval layer, a second active layer, an upper optical limiting layer and an upper waveguide layer to be grown on a substrate in sequence; 2, removing the upper waveguide layer, etching multiple gratings in the upper optical limiting layer in a radial pattern to form a dual-cycle annular grating; 3, performing re-growth of the upper waveguide layer on the etched upper optical limiting layer; 4, etching an annular ridge structure in the upper waveguide layer downwards, wherein the etching depth reaches the lower optical limiting layer; 5, filling the trenches of the etched annular ridge structure with semi-insulated InP: Fe; 6, performing evaporation of a front surface metal electrode on the annular ridge structure, the trenches of which are filled with the semi-insulated InP: Fe, and then performing gold plating; 7, performing thinning and polishing on the substrate, and performing evaporation of a back surface metal electrode on the back surface of the substrate; and 8, etching the metal electrodes to prepare two-stage annular surface metal gratings to complete preparation.

The invention provides an organic light emitting diode (OLED), having a substrate, an anode layer of silver or gold, wherein the anode layer is treated with CF4 plasma to enhance the hole injection of the semitransparent anode layer.

The invention discloses an OLED structure optimization design method and device and belongs to OLED field. The method includes the following steps: step 1, determining the working wavelength lambda ofOLED, the optical constant of each layer material of OLED, the initial design thickness value of each layer material of OLED and the azimuth of the main axis of anisotropic material in OLED, theta and psi; step 2, establishing the multi-layer stack optical model of OLED based on the parameters identified in step 1 and adjusting the thickness of cathode, cathode finish layer, luminous layer, holetransport layer, hole injection layer, anode and the layer to be optimized in the substrate. The simulation test is conducted to obtain the external coupling efficiency of OLED at different structurethicknesses and determine the maximum structural thickness of external coupling efficiency. The device is used to executive the above method. The method has the advantages of simple principle and easy-to-operate and can realize the simulation optimization calculation of OLED structure dimension.

An optical device structure with a light outcoupling layer is provided. The optical device structure includes a substrate having a first surface and a second surface, and a layer of polyimide (PI) or its copolymer formed on the first surface of the substrate, wherein the layer of polyimide or its copolymer is prepared from at least one aromatic diamine and at least one cycloaliphatic dianhydride, and an optical component formed on the layer of polyimide or its copolymer.