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33results about How to "Improve Outcoupling Efficiency" patented technology

Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom

The present invention relates to radiation, preferably light emitting, devices with a high radiation emission efficiency and to fabricating these as small devices in an array of such devices. In one embodiment, the emitting devices can be placed in dense arrays. In another embodiment, outcoupling efficiency of the devices is improved, which leads to a reduced power consumption for a given radiation output power. In another embodiment, the speed of the radiation is increased, hence the serial bandwidth per optical channel is increased. The invention further relates to light emitting devices that exhibit uniform radiation emission characteristics. The light emitting devices (diodes, LEDs) of the present invention can be used for applications wherein two-dimensional LED arrays, particularly low-power arrays, are useful, such as in display technology. Active matrix displays relying on liquid crystals (e.g. integrated on CMOS circuitry) could be replaced by LED arrays. Dense and bright one-dimensional LED arrays are useful for example for printing and copying. Also for single LED applications it is important to have a maximum of photons escaping from the light emitting surface. The intensity of light per unit area (the brightness) is larger, and this is useful in many applications. Furthermore, the packaging cost can be reduced. In order to achieve a large global efficiency, many conventional LEDs need an elaborate package that includes a cavity with mirrors, because the light is emitted from more than one surface of the LED.
Owner:SIGNIFY HLDG BV

Display

A display includes a light-emitting element which includes a back electrode, a front electrode facing the back electrode, and an active layer interposed therebetween and including an emitting layer, and a light-scattering layer which is placed on a front side of the front electrode. The light-emitting element forms at least a portion of a microcavity structure. A forward-scattered light is greater in luminous energy than a back-scattered light when the light-scattering layer is irradiated with light from the microcavity structure.
Owner:KUBOTA HIROFUMI +2

Luminescent device, manufacturing method thereof and display device

The invention discloses a luminescent device, a manufacturing method thereof and a display device, and belongs to the field of luminescent devices. The luminescent device comprises a substrate, a luminescent unit and a thin film packaging structure, wherein the luminescent unit is arranged on the substrate; the thin film packaging structure is arranged on the side, far away from the substrate, ofthe luminescent unit; the thin film packaging structure comprises at least one packaging film; a target packaging film in the at least one packaging film is provided with a first packaging part and asecond packaging part which is located at the same layer with the first packaging part and in contact with the first packaging part; the positive projection of the first packaging part on the substrate covers the positive projection of the luminescent unit on the substrate; and the refractive index of the first packaging part is smaller than the refractive index of the second packaging part. The luminescent device is beneficial for avoiding the light emitted by the luminescent unit from generating a waveguide effect on the thin film packaging structure, and is beneficial for improving the external coupling efficiency of the luminescent device. The invention is used for luminescent devices.
Owner:BOE TECH GRP CO LTD

OLED structure dimension optimization design method and device

The invention discloses an OLED structure optimization design method and device and belongs to OLED field. The method includes the following steps: step 1, determining the working wavelength lambda ofOLED, the optical constant of each layer material of OLED, the initial design thickness value of each layer material of OLED and the azimuth of the main axis of anisotropic material in OLED, theta and psi; step 2, establishing the multi-layer stack optical model of OLED based on the parameters identified in step 1 and adjusting the thickness of cathode, cathode finish layer, luminous layer, holetransport layer, hole injection layer, anode and the layer to be optimized in the substrate. The simulation test is conducted to obtain the external coupling efficiency of OLED at different structurethicknesses and determine the maximum structural thickness of external coupling efficiency. The device is used to executive the above method. The method has the advantages of simple principle and easy-to-operate and can realize the simulation optimization calculation of OLED structure dimension.
Owner:武汉宇微光学软件有限公司

Semiconductor Device and Method for Producing a Plurality of Semiconductor Devices

A semiconductor device and a method for producing a plurality of semiconductor devices are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track runs on one of the side faces in places.
Owner:OSRAM OLED

Fabrication method of ring cavity surface emission difference frequency terahertz quantum cascade laser

The invention discloses a preparation method of an annular cavity surface-equipped and difference frequency terahertz-emitting quantum cascading laser structure. The preparation method comprises the following steps of 1, enabling a lower waveguide layer, a lower optical limiting layer, a first active layer, an interval layer, a second active layer, an upper optical limiting layer and an upper waveguide layer to be grown on a substrate in sequence; 2, removing the upper waveguide layer, etching multiple gratings in the upper optical limiting layer in a radial pattern to form a dual-cycle annular grating; 3, performing re-growth of the upper waveguide layer on the etched upper optical limiting layer; 4, etching an annular ridge structure in the upper waveguide layer downwards, wherein the etching depth reaches the lower optical limiting layer; 5, filling the trenches of the etched annular ridge structure with semi-insulated InP: Fe; 6, performing evaporation of a front surface metal electrode on the annular ridge structure, the trenches of which are filled with the semi-insulated InP: Fe, and then performing gold plating; 7, performing thinning and polishing on the substrate, and performing evaporation of a back surface metal electrode on the back surface of the substrate; and 8, etching the metal electrodes to prepare two-stage annular surface metal gratings to complete preparation.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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