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Fabrication method of ring cavity surface emission difference frequency terahertz quantum cascade laser

A quantum cascade, terahertz technology, applied in lasers, solid-state lasers, laser parts, etc., can solve the problem of low outcoupling efficiency of terahertz light, and achieve the goal of improving outcoupling efficiency, improving far-field divergence, and improving heat dissipation. Effect

Active Publication Date: 2019-02-15
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0003] To sum up the above-mentioned problems that lead to low outcoupling efficiency of terahertz light, this patent proposes a preparation method of ring cavity surface emission difference frequency terahertz quantum cascade laser, which can improve its outcoupling efficiency and realize terahertz efficient extraction of light

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  • Fabrication method of ring cavity surface emission difference frequency terahertz quantum cascade laser
  • Fabrication method of ring cavity surface emission difference frequency terahertz quantum cascade laser

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Embodiment Construction

[0019] see figure 1 and figure 2 As shown, the present invention provides a method for preparing a ring-cavity surface-emitting difference-frequency terahertz quantum cascade laser, comprising the following steps:

[0020] Step 1: On a substrate 1, grow the lower waveguide layer 2, the lower optical confinement layer 3, the first active layer 4, the spacer layer 5, the second active layer 6, the upper optical confinement layer 7 and the upper waveguide layer 8. The material of the substrate 1 is n-type doped semi-insulating InP, the material of the lower waveguide layer 2 is n-type doped InGaAs, and the material of the lower optical confinement layer 3 is n-type Doped InP, the first active layer 4 and the second active layer 6 are composed of 20-40 periods of InGaAs / InAlAs quantum wells, the first active layer 4 and the second active layer 6 correspond to The wavelength is 7-11 μm, the material of the spacer layer 5 is n-type doped InGaAs, the material of the upper optical ...

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Abstract

The invention discloses a preparation method of an annular cavity surface-equipped and difference frequency terahertz-emitting quantum cascading laser structure. The preparation method comprises the following steps of 1, enabling a lower waveguide layer, a lower optical limiting layer, a first active layer, an interval layer, a second active layer, an upper optical limiting layer and an upper waveguide layer to be grown on a substrate in sequence; 2, removing the upper waveguide layer, etching multiple gratings in the upper optical limiting layer in a radial pattern to form a dual-cycle annular grating; 3, performing re-growth of the upper waveguide layer on the etched upper optical limiting layer; 4, etching an annular ridge structure in the upper waveguide layer downwards, wherein the etching depth reaches the lower optical limiting layer; 5, filling the trenches of the etched annular ridge structure with semi-insulated InP: Fe; 6, performing evaporation of a front surface metal electrode on the annular ridge structure, the trenches of which are filled with the semi-insulated InP: Fe, and then performing gold plating; 7, performing thinning and polishing on the substrate, and performing evaporation of a back surface metal electrode on the back surface of the substrate; and 8, etching the metal electrodes to prepare two-stage annular surface metal gratings to complete preparation.

Description

technical field [0001] The invention relates to the technical field of infrared semiconductor optoelectronic devices, in particular to a method for preparing a ring-shaped cavity surface-emitting difference-frequency terahertz quantum cascade laser. The unique feature of this structure is that the epitaxial wafer is made into an annular double-groove structure, and then a two-stage annular metal grating is fabricated on the substrate. Effective extraction of Hertz light; on the other hand, the far-field divergence of THz light can be improved. Background technique [0002] Due to its special spectral position, the terahertz wave with a wavelength of 30-300 μm between infrared and microwave has broad application prospects in spectral imaging, radio astronomy, free space communication, medical treatment and environmental monitoring. At present, the traditionally available high-power terahertz sources are very limited. Some electronic devices are difficult to produce radiation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/34H01S5/343H01S1/02
CPCH01S1/02H01S5/3402H01S5/34306
Inventor 程凤敏张锦川贾志伟赵越周予虹刘峰奇王利军刘俊岐刘舒曼王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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