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54results about How to "Coupling efficiency is improved" patented technology
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Coupling of communications signals to a power line
InactiveUS7522812B2Improved transmission and throughputQuick installationPower distribution line transmissionGaseous cathodesLow voltageEngineering
In one embodiment, a device for coupling communications signals onto a medium-voltage power line includes a first connector, a second connector and one or more components. The first connector is adapted to couple to a low-voltage communications line. The second connector is adapted to couple to a surge arrester. The one or more components are operable to substantially match the impedances between the surge arrester and the low-voltage communications line.
Owner:INTERNATIONAL BROADBAND ELECTRIC COMMUNICATIONS INC
High efficiency grating coupling for light delivery in EAMR
ActiveUS8200054B1Maximise couplingCoupling efficiency is improvedRecord information storageMagnetic recordingGratingLight delivery
A magnetic head comprising a waveguide coupler for coupling incident electromagnetic (EM) radiation into a waveguide is disclosed. The waveguide coupler includes a bottom clad layer and a waveguide core layer formed above the bottom clad layer. An interface between the bottom clad layer and the waveguide core layer includes a first grating having a first period and a first etch depth, which are configured to couple a first portion of the incident EM radiation into the waveguide core layer. The waveguide coupler can further comprise a top clad layer formed above the waveguide core layer. An interface between the waveguide core layer and the top clad layer includes a second grating having a second period and a second etch depth. The second period and the second etch depth are configured to couple a second portion of the incident EM radiation into the waveguide core layer.
Owner:WESTERN DIGITAL TECH INC
Multi-wavelength optical transceiver subassembly module
InactiveUS20060088255A1Coupling efficiency is improvedCompact structureCoupling light guidesTransceiverSignal on
Disclosed is an optical transceiver subassembly module for multiplexing and demultiplexing a plurality of channels of different wavelengths. The optical subassembly module includes a transmitter optical subassembly (TOSA) and a receiver optical subassembly (ROSA). For a TOSA, the optical signals emitted by four laser diodes of different wavelengths are combined into a multiplexed optical signal, through respective thin film filters and lenses, which is then coupled onto an optical fiber after passing through a focusing lens. For a ROSA, the input optical signal on the receiver end of the optical fiber is separated into multiple optical wavelength signals, through respective thin film filters and lenses, which are then registered by respective photo detectors. This optical subassembly module with compact star-shaped optics design, active and passive alignments is able to attain high coupling efficiency between optical signals and the optical fiber.
Owner:NAT TAIWAN UNIV
Semiconductor chip with coil antenna and communication system
InactiveUS20050173532A1Good communication characteristicsIncrease parasitic capacitanceLoop antennas with ferromagnetic coreAntenna supports/mountingsElectromagnetic couplingElectrical conductor
The present invention intends to prevent the communication distance from becoming shorter with a reduction in size of a coil antenna to the chip size and with a consequent decrease of an induced voltage. According to the present invention there is provided a semiconductor chip having a coil antenna and a circuit surface and adapted to transmit and receive signals by radio to and from an external device. The semiconductor chip has a configuration for increasing an electromagnetic coupling coefficient between the coil antenna and the external device. According to a concrete example thereof, a magnetic material is disposed, the coil antenna is formed by a stacked structure comprising plural conductor layers and insulating layers superimposed one on another, or the coil antenna is disposed outside an external form of a circuit of the semiconductor chip.
Owner:HITACHI LTD
Semiconductor chip with coil antenna and communication system
InactiveUS7355270B2Coupling efficiency is improvedLoop antennas with ferromagnetic coreAntenna supports/mountingsElectromagnetic couplingCommunications system
The present invention intends to prevent the communication distance from becoming shorter with a reduction in size of a coil antenna to the chip size and with a consequent decrease of an induced voltage. According to the present invention there is provided a semiconductor chip having a coil antenna and a circuit surface and adapted to transmit and receive signals by radio to and from an external device. The semiconductor chip has a configuration for increasing an electromagnetic coupling coefficient between the coil antenna and the external device. According to a concrete example thereof, a magnetic material is disposed, the coil antenna is formed by a stacked structure comprising plural conductor layers and insulating layers superimposed one on another, or the coil antenna is disposed outside an external form of a circuit of the semiconductor chip.
Owner:HITACHI LTD
Microstructured optical fibre with cladding recess, a method of its production, and apparatus comprising same
InactiveUS20050117860A1High confinement of lightMechanical robustnessOptical fibre with multilayer core/claddingCoupling light guidesEngineeringAmplifier
A microstructured optical fibre comprising an inner cladding and an outer cladding; said outer cladding comprising elongated outer cladding features extending in an axial direction of the fibre, and at least one cladding recess extending at least partly through the outer cladding in a radial direction to the inner cladding; said cladding recess providing optical access to the inner cladding; a method of forming a cladding recess in such an optical fibre comprising a step of collapsing a part of the outer cladding features by use of a heat source; an apparatus comprising such a microstructured optical fibre, preferably a laser or an amplifier.
Owner:CRYSTAL FIBRE AS
Microstructured optical fibre with cladding recess, a method of its production, and apparatus comprising same
InactiveUS7221840B2Coupling efficiency is improvedFaster and cheap methodOptical fibre with multilayer core/claddingCoupling light guidesFiberEngineering
A microstructured optical fibre comprising an inner cladding and an outer cladding; said outer cladding comprising elongated outer cladding features extending in an axial direction of the fibre, and at least one cladding recess extending at least partly through the outer cladding in a radial direction to the inner cladding; said cladding recess providing optical access to the inner cladding; a method of forming a cladding recess in such an optical fibre comprising a step of collapsing a part of the outer cladding features by use of a heat source; an apparatus comprising such a microstructured optical fibre, preferably a laser or an amplifier.
Owner:CRYSTAL FIBRE AS
Thermally assisted magnetic recording head and magnetic recording apparatus
InactiveUS7898759B2Reduce outputIncrease productionDriving/moving recording headsRecord information storageHeat-assisted magnetic recordingPhotodetector
A second waveguide is formed near a first waveguide for guiding light to the vicinity of a main pole of a thermally assisted magnetic recording head, and a portion of light propagated through the waveguide 1 is branched to the second waveguide. The light transmitting in the second waveguide is detected by a photodetector to detect an intensity of the light propagated through the first waveguide. In the magnetic recording apparatus, an intensity of a semiconductor laser is decreased when an amount of light incident to the photodetector is large and the intensity of the semiconductor laser is increased when the amount of light incident to the photodetector is small. By constituting a feedback loop as described above, the intensity of the light propagated through the first waveguide is kept constant.
Owner:HITACHI LTD
Laser diode and method of manufacture
InactiveUS20050265415A1Narrow spectrumCoupling efficiency is improvedNanoopticsSemiconductor lasersQuantum wellDistributed Bragg reflector
VCSEL diode comprises a bottom electrode (10), conducting substrate material (11), a bottom mirror (12) formed by a multilayer distributed Bragg reflector (DBR) of certain conductivity and reflectivity RA, and an active region (13) comprising a plurality of layers some of which are quantum wells. It also comprises a top mirror (14) formed by a multilayer distributed Bragg reflector (DBR) with reflectivity RB<RA and conductivity of a second type. There are a number of layers (15, 18) which through a process of selective oxidation (exposure to a high temperature wet atmosphere) may be selectively converted to oxide layers, therefore producing well defined internal oxide apertures within the top mirror. There is a high-conductivity semiconductor top contact layer (17), a top electrode layer (19) with a centrally located aperture from which light is emitted, and a trench (16) which defines a mesa type VCSEL. The VCSEL comprises at least one oxide suppression layer in the top mirror whose function it is to suppress high order transverse optical modes.
Owner:FIRECOMMS
Hybrid vertical cavity laser for photonic integrated circuit
ActiveUS20140098833A1Coupling efficiency is improvedOptical wave guidanceLaser detailsGratingRefractive index
According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.
Owner:SAMSUNG ELECTRONICS CO LTD
Optical subassembly of optical transceiver
InactiveUS20060274999A1Coupling efficiency is improvedPoor alignmentCoupling light guidesElectromagnetic transmissionDual axisOpto electronic
A transceiver module comprised of a multiplexing / demultiplexing optical subassembly is provided. The optical subassembly includes either a transmitter module or a receiver module or both. The transmitter module has laser diodes emitting optical signals, which are reflected by reflectors, and coupled together by thin film filter. The receiver module includes thin film filters that decouple a received optical signal into constituent components. These components are reflected by reflectors to photo detectors by which the optical signals are converted into electrical signals. The reflector are capable of dual axis adjustment for adjustment of inclination thereof to effect active alignment. Further, the transmitter module and the receiver module define positioning recesses to position the laser diodes and photo detectors. The recesses are sized in accordance with the wavelengths associated with the laser diodes and photo detectors to effect passive alignment.
Owner:NAT TAIWAN UNIV
Semiconductor integrated optical device and method of making the same
InactiveUS20100284019A1Coupling efficiency is improvedAccurate thicknessLaser detailsSemiconductor/solid-state device manufacturingSilicon oxideWaveguide
A semiconductor integrated optical device includes a group III-V compound semiconductor substrate, a semiconductor optical device region, and an optical waveguide region. The semiconductor optical device region and the optical waveguide region are arranged on the group III-V compound semiconductor substrate. The semiconductor optical device region has a first optical waveguide made of group III-V compound semiconductor. The optical waveguide region has a second optical waveguide optically coupled with the first optical waveguide. The optical waveguide region further includes a silicon oxide layer. The silicon oxide layer is disposed between the group III-V compound semiconductor substrate and the second optical waveguide. The second optical waveguide is made of semiconductor which is different from the group III-V compound semiconductor.
Owner:SUMITOMO ELECTRIC IND LTD
Thermally Assisted Magnetic Recording Head And Magnetic Recording Apparatus
InactiveUS20110038235A1Reduce outputIncrease productionCombination recordingRecord information storageAir bearingEngineering
A thermally assisted magnetic recording head includes a flying slider, a magnetic field generation device mounted on the flying slider, a first waveguide disposed near the magnetic field generation device for guiding incident light from a top surface of the flying slider on a side of the flying slider toward an air bearing bottom surface of the flying slider, an optical near-field generator disposed at an emission end of the first waveguide, a second waveguide which is separate from the first waveguide and which is spaced from and coupled to the first waveguide at a distance of no greater than a light wavelength, and a first optical detector for detecting the intensity of light propagating in the second waveguide. The first waveguide and the second waveguide are disposed so as to extend in a direction substantially perpendicular to the air bearing bottom surface of the flying slider.
Owner:HITACHI LTD
Improved Coupling of Communications Signals to a Power Line
InactiveUS20060290476A1Improved transmission and throughputQuick installationFrequency-division multiplex detailsImproving S/N for transmission/receivingElectricityCoupling
In one embodiment, a system for coupling communications signals onto a medium-voltage power line includes a metal oxide varistor, a disconnect device and a capacitor. The metal oxide varistor is electrically coupled to the medium voltage power line. The disconnect device includes a resistor in parallel with an air gap and is electrically coupled in series between the metal oxide varistor and a communications device. The capacitor is electrically coupled to the metal oxide varistor and the communications device in parallel with the disconnect device.
Owner:INTERNATIONAL BROADBAND ELECTRIC COMMUNICATIONS INC +1
Optoelectronic-Device Wafer Probe and Method Therefor
InactiveUS20130001405A1Coupling efficiency is improvedFaster rateMaterial analysis by optical meansPhotometry electrical circuitsLensletPhysics
A probe card for wafer-level testing a plurality of optoelectronic devices on a wafer is provided. The probe card has both electrical and optical functionality. The probe card comprises a plurality of lenslets aligned with the plurality of optoelectronic devices to improve the optical coupling efficiency between each of the plurality of optoelectronic devices and a plurality of optical waveguides located on a probe head.
Owner:WALKER JAMES ALBERT
Mode converter device using omnidirectional reflectors
InactiveUS20050135739A1Minimum loss couplingHigh index contrastNanoopticsCoupling light guidesManufacturing technologyRefractive index
Provided is a mode converter for use in optical communication. The mode converter includes a first waveguide, a second waveguide optically coupled into the first waveguide, and omnidirectional reflectors that are disposed on either side of the first waveguide and have forward reflectivity with respect to a mode propagating in the first waveguide. The mode converter provides minimum loss coupling between either optical fiber or low index difference waveguide and a high index contrast waveguide. Furthermore, the mode converter achieves high, bi-directional optical coupling over a wide wavelength range with a simple manufacturing process.
Owner:SAMSUNG ELECTRONICS CO LTD
Coupling of communications signals to a power line
InactiveUS7414526B2Improved transmission and throughputQuick installationFrequency-division multiplex detailsImproving S/N for transmission/receivingElectricityEngineering
In one embodiment, a system for coupling communications signals onto a medium-voltage power line includes a metal oxide varistor, a disconnect device and a capacitor. The metal oxide varistor is electrically coupled to the medium voltage power line. The disconnect device includes a resistor in parallel with an air gap and is electrically coupled in series between the metal oxide varistor and a communications device. The capacitor is electrically coupled to the metal oxide varistor and the communications device in parallel with the disconnect device.
Owner:INTERNATIONAL BROADBAND ELECTRIC COMMUNICATIONS INC +1
Receiver optical subassembly
InactiveUS20050121736A1Effective alignmentImprove performanceSolid-state devicesOptical light guidesAudio power amplifierEngineering
A receiver optical subassembly for transforming received optical signal into electrical signal includes at least a ceramic substrate, a photo receiver and a transimpedance amplifier. There are high-speed traces formed on the substrate. The positive and negative pads of the photo receiver are coplanar and connected to the traces without wire bonding so as to reduce the parasitic impedance effect and improve the high-speed performance of the optical subassembly. The transimpedance amplifier is electrically connected to the traces via flip chip, wire bonding or other methods. The photo receiver and the transimpedance amplifier are connected via the high-speed traces formed on the substrate.
Owner:IND TECH RES INST
Erbium-doped fiber amplifier and integrated circuit module components
InactiveUS20050280888A1Coupling efficiency is improvedIncrease the number ofFibre transmissionCoupling light guidesErbium dopingEngineering
An EDFA with integrated input and output modules is presented. The integrated input module has a packaged pump laser diode mounted to the metal EDFA package to provide a heat sink for the pump laser diode which sends the pump laser light over a optical fiber section connected to the amplifying erbium-doped optical fiber section. The fiber section is formed from an optical fiber which better matches the transmission modes in the erbium-doped optical fiber section and has an end subsection of the single mode fiber for a larger numerical aperture. Collimating lenses also increase the coupling efficiency of the laser diode to the erbium-doped fiber section. The integrated output module has a photodiode with a tap filter to monitor the output power of the EDFA, an optical isolator to prevent interference in the erbium-doped optical fiber section. With a twin optical isolator, the integrated input and output modules can be arranged in different ways and combinations with the erbium-doped optical fiber section. The resulting EDFAs can be manufactured relatively inexpensively into an very small packages compared to current EDFA packages.
Owner:LIGHTWAVES 2020
Erbium-doped fiber amplifier and integrated module components
InactiveUS6922281B2Coupling efficiency is improvedIncrease the number ofFibre transmissionCoupling light guidesErbium doped fiber amplifierOptical isolator
An EDFA with integrated input and output modules is presented. The integrated input module has a packaged pump laser diode mounted to the metal EDFA package to provide a heat sink for the pump laser diode which sends the pump laser light over a optical fiber section connected to the amplifying erbium-doped optical fiber section. The fiber section is formed from an optical fiber which better matches the transmission modes in the erbium-doped optical fiber section and has an end subsection of the single mode fiber for a larger numerical aperture. Collimating lenses also increase the coupling efficiency of the laser diode to the erbium-doped fiber section. The integrated output module has a photodiode with a tap filter to monitor the output power of the EDFA, an optical isolator to prevent interference in the erbium-doped optical fiber section. With a twin optical isolator, the integrated input and output modules can be arranged in different ways and combinations with the erbium-doped optical fiber section. The resulting EDFAs can be manufactured relatively inexpensively into an very small packages compared to current EDFA packages.
Owner:LIGHTWAVES 2020
3-D self-focusing gap plasmon generator for TAMR
ActiveUS20110292537A1Coupling efficiency is improvedSignificant overlapRecord information storageRecording/reproducing/erasing methodsHeat-assisted magnetic recordingPlasma generator
A device for implementing thermally assisted magnetic recording, using a TE mode laser diode, and method for using it, are described. This device is shaped internally so as to provide three-dimensional self-focusing of plasmon radiation, thereby improving the coupling efficiency between the optical wave-guide and the plasmon generator as a result of ensuring a large overlap between these two modes.
Owner:HEADWAY TECH INC
CMOS-process compatible high-DC surface coating for capacitive detection and stimulation of biological tissues
ActiveUS20050187454A1Straightforward cleaningEasy to rinseElectrotherapyElectrolysis componentsDielectric layerBiochip
Biochip for capacitive stimulation and / or detection of biological tissues. The biochip has a carrier structure, at least one stimulation and / or sensor device, which is arranged in or at the carrier structure, and at least one dielectric layer, one layer area of which is arranged at the stimulation and / or sensor device and the opposite layer area of which forms a stimulation and / or sensor area for capacitive simulation and / or detection of biological tissues, wherein the dielectric layer comprises TiO2.
Owner:INFINEON TECH AG
Broadband, Group Index Independent, and Ultra-Low Loss Coupling into Slow Light Slotted Photonic Crystal Waveguides
ActiveUS20140219602A1Efficient couplingHigh sensitivityNanoopticsCoupling light guidesSlow lightCoupling
The present invention provides a waveguide coupler configured to optically couple a strip waveguide to a first slot photonic crystal waveguide, wherein the slot photonic crystal waveguide has a lattice constant, an air hole diameter, a slot width and a first line defect waveguide width. The waveguide coupler includes a group reflective index taper having a second slot photonic crystal waveguide disposed between and aligned with the first slot photonic crystal waveguide and the strip waveguide. The second slot photonic crystal waveguide has a length, the lattice constant, the air hole diameter, the slot width, and a second line defect waveguide width that is substantially equal to the first line defect waveguide width adjacent to the first slot photonic crystal waveguide and decreases along the length of the second photonic crystal waveguide.
Owner:BOARD OF RGT THE UNIV OF TEXAS SYST
Optical see-through display element and device utilizing such element
ActiveUS10379358B2Coupling efficiency is improvedImprove image qualityMechanical apparatusDiffraction gratingsGratingImaging quality
An optical see-through display element and a display device using such an element. The element having a transparent substrate including two opposite faces, an in-coupling structure for coupling light into the substrate, and a diffractive out-coupling grating structure arranged on the transparent substrate for displaying the in-coupled light on the transparent substrate. The diffractive out-coupling structure includes at least two multi-layer gratings superimposed on top of each other on at least one of said opposite faces of the substrate. In particular, multilayer gratings reducing diffraction of transmissive light can be used. The element and device help to increase the out-coupling efficiency of diffractive displays and provides also technology to simultaneously maintain high image quality and transparency.
Owner:DISPELIX OY
Non-Volatile Memory Cell and Layout Structure of Non-Volatile Memory Device
ActiveUS20110073924A1Reduce cornersCoupling efficiency is highTransistorSolid-state devicesElectrical conductorSemiconductor
A non-volatile memory cell includes a semiconductor substrate with isolation structures formed therein and thereby transistor region and capacitor region are defined therein. A conductor is disposed over the isolation structures, the transistor region and a first-type doped well disposed in the capacitor region. The conductor includes a capacitor portion disposed over the first-type doped well, a transistor portion disposed over the transistor region, a first edge disposed over the isolation structure at a side of the transistor region, and an opposite second edge disposed over the first-type doped well. Two first ion doped wells are disposed in the transistor region and respectively at two sides of the transistor portion, and constitutes a transistor with the transistor portion. A second ion doped region is disposed in the capacitor region excluding the conductor and constitutes a capacitor with the capacitor portion.
Owner:UNITED MICROELECTRONICS CORP
High-Frequency Vacuum Electronic Device
ActiveUS20190279834A1Coupling efficiency is improvedEnhanced couplingTravelling-wave tubesTransit-tube cathodesElectrical conductorSelf assembling
Owner:WISCONSIN ALUMNI RES FOUND +1
Optoelectronic-device wafer probe and method therefor
InactiveUS9040896B2Coupling efficiency is improvedFaster rateMaterial analysis by optical meansPhotometry using electric radiation detectorsProbe cardOpto electronic
A probe card for wafer-level testing a plurality of optoelectronic devices on a wafer is provided. The probe card has both electrical and optical functionality. The probe card comprises a plurality of lenslets aligned with the plurality of optoelectronic devices to improve the optical coupling efficiency between each of the plurality of optoelectronic devices and a plurality of optical waveguides located on a probe head.
Owner:WALKER JAMES ALBERT
Semiconductor Metrology Based On Hyperspectral Imaging
ActiveUS20200225151A1Coupling efficiency is improvedLimit divergence of beamSpectrum investigationSemiconductor/solid-state device testing/measurementPixel densityPixel mapping
Methods and systems for performing semiconductor measurements based on hyperspectral imaging are presented herein. A hyperspectral imaging system images a wafer over a large field of view with high pixel density over a broad range of wavelengths. Image signals collected from a measurement area are detected at a number of pixels. The detected image signals from each pixel are spectrally analyzed separately. In some embodiments, the illumination and collection optics of a hyperspectral imaging system include fiber optical elements to direct illumination light from the illumination source to the measurement area on the surface of the specimen under measurement and fiber optical elements to image the measurement area. In another aspect, a fiber optics collector includes an image pixel mapper that couples a two dimensional array of collection fiber optical elements into a one dimensional array of pixels at the spectrometer and the hyperspectral detector.
Owner:KLA TENCOR TECH CORP
Hybrid vertical cavity laser for photonic integrated circuit
ActiveUS9054489B2Coupling efficiency is improvedOptical wave guidanceLaser optical resonator constructionGratingRefractive index
According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.
Owner:SAMSUNG ELECTRONICS CO LTD
Method of fabricating non-volatile memory device
InactiveUS20120264264A1Coupling efficiency is improvedSimple and cheap processSolid-state devicesSemiconductor/solid-state device manufacturingDielectric layerVolatile memory
A method of fabricating a non-volatile memory device is provided. A substrate including a first region and a second region is provided. Then, an uneven surface is formed on the substrate in the second region. Thereafter, a doped layer is formed in the substrate in the second region, and the doped layer is served as a control gate. Afterward, a dielectric layer is formed on the substrate in the first region and on the uneven surface of the substrate in the second region. Next, a floating gate is formed on the dielectric layer, and the floating gate is extended from the first region to the second region. Source and drain regions are formed in the substrate at opposite sides of the floating gate in the first region.
Owner:MAXCHIP ELECTRONICS CORP
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