54results about How to "Coupling efficiency is improved" patented technology

In one embodiment, a device for coupling communications signals onto a medium-voltage power line includes a first connector, a second connector and one or more components. The first connector is adapted to couple to a low-voltage communications line. The second connector is adapted to couple to a surge arrester. The one or more components are operable to substantially match the impedances between the surge arrester and the low-voltage communications line.

The present invention intends to prevent the communication distance from becoming shorter with a reduction in size of a coil antenna to the chip size and with a consequent decrease of an induced voltage. According to the present invention there is provided a semiconductor chip having a coil antenna and a circuit surface and adapted to transmit and receive signals by radio to and from an external device. The semiconductor chip has a configuration for increasing an electromagnetic coupling coefficient between the coil antenna and the external device. According to a concrete example thereof, a magnetic material is disposed, the coil antenna is formed by a stacked structure comprising plural conductor layers and insulating layers superimposed one on another, or the coil antenna is disposed outside an external form of a circuit of the semiconductor chip.

A microstructured optical fibre comprising an inner cladding and an outer cladding; said outer cladding comprising elongated outer cladding features extending in an axial direction of the fibre, and at least one cladding recess extending at least partly through the outer cladding in a radial direction to the inner cladding; said cladding recess providing optical access to the inner cladding; a method of forming a cladding recess in such an optical fibre comprising a step of collapsing a part of the outer cladding features by use of a heat source; an apparatus comprising such a microstructured optical fibre, preferably a laser or an amplifier.

A thermally assisted magnetic recording head includes a flying slider, a magnetic field generation device mounted on the flying slider, a first waveguide disposed near the magnetic field generation device for guiding incident light from a top surface of the flying slider on a side of the flying slider toward an air bearing bottom surface of the flying slider, an optical near-field generator disposed at an emission end of the first waveguide, a second waveguide which is separate from the first waveguide and which is spaced from and coupled to the first waveguide at a distance of no greater than a light wavelength, and a first optical detector for detecting the intensity of light propagating in the second waveguide. The first waveguide and the second waveguide are disposed so as to extend in a direction substantially perpendicular to the air bearing bottom surface of the flying slider.

In one embodiment, a system for coupling communications signals onto a medium-voltage power line includes a metal oxide varistor, a disconnect device and a capacitor. The metal oxide varistor is electrically coupled to the medium voltage power line. The disconnect device includes a resistor in parallel with an air gap and is electrically coupled in series between the metal oxide varistor and a communications device. The capacitor is electrically coupled to the metal oxide varistor and the communications device in parallel with the disconnect device.

An EDFA with integrated input and output modules is presented. The integrated input module has a packaged pump laser diode mounted to the metal EDFA package to provide a heat sink for the pump laser diode which sends the pump laser light over a optical fiber section connected to the amplifying erbium-doped optical fiber section. The fiber section is formed from an optical fiber which better matches the transmission modes in the erbium-doped optical fiber section and has an end subsection of the single mode fiber for a larger numerical aperture. Collimating lenses also increase the coupling efficiency of the laser diode to the erbium-doped fiber section. The integrated output module has a photodiode with a tap filter to monitor the output power of the EDFA, an optical isolator to prevent interference in the erbium-doped optical fiber section. With a twin optical isolator, the integrated input and output modules can be arranged in different ways and combinations with the erbium-doped optical fiber section. The resulting EDFAs can be manufactured relatively inexpensively into an very small packages compared to current EDFA packages.

An optical see-through display element and a display device using such an element. The element having a transparent substrate including two opposite faces, an in-coupling structure for coupling light into the substrate, and a diffractive out-coupling grating structure arranged on the transparent substrate for displaying the in-coupled light on the transparent substrate. The diffractive out-coupling structure includes at least two multi-layer gratings superimposed on top of each other on at least one of said opposite faces of the substrate. In particular, multilayer gratings reducing diffraction of transmissive light can be used. The element and device help to increase the out-coupling efficiency of diffractive displays and provides also technology to simultaneously maintain high image quality and transparency.

A probe card for wafer-level testing a plurality of optoelectronic devices on a wafer is provided. The probe card has both electrical and optical functionality. The probe card comprises a plurality of lenslets aligned with the plurality of optoelectronic devices to improve the optical coupling efficiency between each of the plurality of optoelectronic devices and a plurality of optical waveguides located on a probe head.

According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.

A method of fabricating a non-volatile memory device is provided. A substrate including a first region and a second region is provided. Then, an uneven surface is formed on the substrate in the second region. Thereafter, a doped layer is formed in the substrate in the second region, and the doped layer is served as a control gate. Afterward, a dielectric layer is formed on the substrate in the first region and on the uneven surface of the substrate in the second region. Next, a floating gate is formed on the dielectric layer, and the floating gate is extended from the first region to the second region. Source and drain regions are formed in the substrate at opposite sides of the floating gate in the first region.