41results about How to "Concentrate more" patented technology

A method for setting up a condition for a drive signal in a liquid ejection head that includes a plurality of linearly-arranged nozzles and driving elements provided for each of the nozzles, includes: calculating an ejection rate for each nozzle relating to a supply of the drive signal under a predetermined condition by using a moving average; classifying the plurality of nozzles into a plurality of groups based on the ejection rate calculated by using the moving average of each nozzle; calculating a proper condition for the drive signal corresponding to each group based on a statistical value of the ejection rate relating to the group; and selecting one proper condition among proper conditions corresponding to the groups so as to set the selected proper condition for each nozzle.

The present invention involves an exercise mat having magnetic properties. The mat is preferably rectangular in shape and comprised of magnetized polyvinyl chloride foam material. A thin net layer of fibers can be positioned on top of and / or below the foam layer to increase strength and durability. The foam material can contain a magnetic flux in the range of 400 gauss to 1200 gauss, preferably 400 gauss to 800 gauss. Alternatively, the exercise mat can comprise an inner layer of magnetic material surrounded by outer layers of non-magnetized foam material. The exercise mat can also contain two or more handle grips or support openings for use when performing various activities, such as yoga or aerobic exercises.

An additive breakdown product in an acid copper plating bath sample is detected by performing a voltammetric analysis for the leveler additive in two measurement solutions comprising different volume fractions of the copper plating bath sample in a background electrolyte. When the plating bath sample contains a substantial concentration of the additive breakdown product, the analyses for the first and second measurement solutions indicate different concentrations for the leveler additive in the plating bath sample. A comparison of the leveler additive concentrations indicated by the two analyses provides a measure of the concentration of the additive breakdown product.

A wireless communication apparatus includes a transmitting device configured to transmit burst data of a plurality of transmission data, a receiving device configured to receive an acknowledgement status of the burst data transmitted by the transmitting device, a retransmitting device configured to control the transmitting device to retransmit any of the plurality of transmission data contained in the burst data, in accordance with the acknowledgement status received by the receiving device, and a retransmission limiting device configured to limit the retransmission for each frame exchange sequence of the burst data.

A technique that can realize high integration even for multilayered three-dimensional structures at low costs by improving the performance of the semiconductor device having recording or switching functions by employing a device structure that enables high precision controlling of the movement of ions in the solid electrolyte. The semiconductor element of the device is formed as follows; two or more layers are deposited with different components respectively between a pair of electrodes disposed separately in the vertical (z-axis) direction, then a pulse voltage is applied between those electrodes to form a conductive path. The resistance value of the path changes according to an information signal. Furthermore, a region is formed at a middle part of the conductive path. The region is used to accumulate a component that improves the conductivity of the path, thereby enabling the resistance value (rate) to response currently to the information signal. More preferably, an electrode should also be formed at least in either the x-axis or y-axis direction to apply a control voltage to the electrode.

A dynamic random access memory (DRAM) is provided. The DRAM comprises a substrate, a vertical transistor, a deep trench capacitor and a buried strap. The substrate has a trench and a deep trench located on one side of the trench thereon. The vertical transistor is disposed in the trench, a portion of which is disposed on the substrate. The deep trench capacitor is disposed in the deep trench, and comprises a bottom electrode, a capacitor dielectric layer and a top electrode. The vertical transistor comprises a gate structure disposed in the trench and above the substrate, a first doped region disposed in the substrate on sidewalls and bottom of the trench, and a second doped region disposed in the substrate on top of the trench. The buried strap is disposed in the substrate below the vertical transistor, and is adjoined to the first doped region and the top electrode.

The invention relates to an organic light-emitting diode (OLED) display device and a manufacturing method thereof. In the invention, a first retaining wall corresponding to a bending region is configured to include first retaining wall units spaced apart from each other, and a first buffer structure is formed in a gap provided between the first retaining wall units and is alternately connected to a left side and a right side of the first retaining wall units. This can prevent excessive stress concentration on the retaining wall in the bending region due to its special configuration, which causes a phenomenon of film layer detachment. Therefore, a failure of the OLED display device is prevented.