The invention discloses a method for manufacturing a light-emitting
diode emitting light through an
electrode. According to the method, an
epitaxy light-emitting structure is formed on an
epitaxy of an
epitaxy substrate, and a light-pervious channel manufacturing layer is formed on the epitaxy light-emitting structure; a plurality of regular light-pervious channels are formed in an
electrode area of the light-pervious channel manufacturing layer by means of a
mask and an ICP
etching process, and the depth of the portion, undergoing ICP
etching, of an
electrode area allows the surface of the epitaxy light-emitting structure to be exposed; light-pervious materials are evaporated on the surface of the exposed surface of the epitaxy light-emitting structure until the light-pervious channels are filled with the materials and a light-pervious column is formed; the light-pervious channel manufacturing layer is corroded and removed, the light-pervious column is retained and the epitaxy light-emitting structure is exposed; a
soldering station electrode is formed on the surface of the epitaxy light-emitting structure, and the thickness of the
solder station electrode is larger than the height of the light-pervious column; the surface of a first electrode or a second electrode which serves as the
soldering station electrode is under ICP
etching until the upper surface of the light-pervious column is exposed; a back electrode is formed on the epitaxy light-emitting structure, and a light-emitting
diode chip is formed on a split sheet. The light blocking area of the
soldering station electrode can be reduced, and external
quantum efficiency of the light-emitting
diode can be improved.