Infrared light-emitting diode with high-reliability electrodes

An infrared luminous, reliable technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of soldering station electrodes falling off, easily broken soldering station electrodes, etc., to increase the contact surface, improve luminous efficiency, and increase the effect Effect

Inactive Publication Date: 2014-12-10
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide an infrared light-emitting diode with high-reliability electrodes, which can effectively improve the reliability of the electrodes, and solve the problem that the electrodes of the soldering station are easy to fall off from the epitaxial layer or the epitaxial material under the electrodes of the soldering station is easily broken during packaging and bonding.

Method used

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  • Infrared light-emitting diode with high-reliability electrodes
  • Infrared light-emitting diode with high-reliability electrodes
  • Infrared light-emitting diode with high-reliability electrodes

Examples

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Embodiment 1

[0056] refer to Figure 1 to Figure 7 As shown, the present invention discloses an infrared light-emitting diode with high-reliability electrodes and the first embodiment of its manufacturing method.

[0057] Such asfigure 1 As shown, the upper surface of the GaAs substrate 1 is composed of a micro-roughened layer 2, an ohmic contact layer 3, an etching stop layer 4, a roughened layer 5, a first-type conductive layer 6, an active layer 7, and a first-type conductive layer 6 from bottom to top. Type II conductive layer 8 .

[0058] The material of the micro-roughened layer 2 is (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P three and five compounds, and the thickness of the micro-roughened layer is 200nm.

[0059] The material of the ohmic contact layer 3 is GaAs III-V compound, and the thickness of the ohmic contact layer 3 is 100 nm.

[0060] The material of corrosion stop layer 4 comprises (Al 0.5 Ga 0.5 ) 0.5 In 0.5 P three and five compounds, and the thickness of the corrosion st...

Embodiment 2

[0076] The difference between embodiment two and embodiment one is: the material of the micro-roughened layer 2 is (Al 0.4 Ga 0.6 ) 0.5 In 0.5 P three and five compound, and the thickness of the micro-roughened layer 2 is 300nm.

[0077] The material of the ohmic contact layer 3 is GaAs III-V compound, and the thickness of the ohmic contact layer 3 is 150 nm.

[0078] The material of the corrosion stop layer 4 includes (Al 0.8 Ga 0.2 ) 0.5 In 0.5 P three and five compounds, and the thickness of the corrosion stop layer 4 is 150nm.

[0079] The material of the roughened layer 5 is Al 0.45 Ga 0.55 As III-V compound, and the thickness of the roughened layer 5 is 2 μm.

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Abstract

The invention discloses an infrared light-emitting diode with high-reliability electrodes. A roughening layer is arranged on one side of an epitaxial light-emitting structure, a corrosion stop layer is arranged on the roughening layer, an ohmic contact layer is arranged on the corrosion stop layer, extension electrodes are formed on the surface of the ohmic contact layer, a micro roughening layer is arranged on the ohmic contact layer, and a bonding pad electrode is arranged on the micro roughening layer and connected with the extension electrodes; a metal reflector is arranged on the other side of the epitaxial light-emitting structure, a substrate is arranged on the metal reflector, and a back electrode is arranged on the substrate. Reliability of soldering station electrodes is improved effectively, the problem that soldering station electrodes are prone to falling off due to poor adhesion is solved, and the packaging problem that the epitaxial layer under the soldering station electrodes is easy to break up during wire bonding is solved as well.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an infrared light-emitting diode with high-reliability electrodes. Background technique [0002] Infrared light-emitting diodes have the advantages of low power consumption, small size and high reliability, and are widely used in communication, remote sensing devices and other fields. In the prior art, metal-organic compound vapor phase epitaxy is used to grow the epitaxial structure with quantum wells to achieve higher internal quantum efficiency; at the same time, flip-chip manufacturing processes such as metal mirrors and surface roughening are used to improve the external quantum efficiency of infrared light-emitting diodes. efficiency. [0003] Due to the complicated steps of the flip-chip process, the reliability of electrodes produced by the manufacturing process adopted in the prior art is relatively poor. The publication number is CN103682023A, which disc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/30H01L33/40H01L33/38
CPCH01L33/32H01L33/10H01L33/22
Inventor 林志伟陈凯轩张永杨凯蔡建九白继锋卓祥景姜伟刘碧霞
Owner XIAMEN CHANGELIGHT CO LTD
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