67 results about "Semiconductor plasma" patented technology

An advanced coating for parts used in plasma processing chamber. The advanced coating is formed over an anodized surface that has not been sealed. After the coating is formed, the coated area is masked, and the remaining anodized surface is sealed. The porous and rough structure of the anodized but un-sealed aluminum enhances adhesion of the coating. However, to prevent particle generation, the exposed anodized surface is sealed after formation of the coating. The coating can be of yttria, formed by plasma enhanced atomic deposition techniques which results in a dense and smooth coating.

A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principle components and transitional principle components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principle components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits. The potential source(s) of chamber fault can also be identified by the lowest matching score(s).

The invention relates to the technical field of lasers, and provides a two-dimensional semiconductor saturable absorber mirror. The two-dimensional semiconductor saturable absorber mirror comprises an optical fiber, a two-dimensional semiconductor film attached to the optical fiber end face and a gold film attached to the two-dimensional semiconductor film. The invention further provides a preparation method of the two-dimensional semiconductor saturable absorber mirror. The preparation method comprises the steps of: cutting the optical fiber; placing the cut optical fiber and a two-dimensional semiconductor target material in a vacuum chamber, depositing two-dimensional semiconductor plasma on the optical fiber end face, forming the two-dimensional semiconductor film, and enabling the two-dimensional semiconductor film to reach the required thickness by controlling the deposition time and / or the deposition temperature; and plating the gold film on the obtained two-dimensional semiconductor film. The novel two-dimensional semiconductor saturable absorber mirror provided by the invention is composed of the optical fiber end face, the two-dimensional semiconductor film and the gold film, and has the advantages of being high in damage threshold, simple in structure, low in cost, and high in reliability.

A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.

The present invention relates to plasma cleaning apparatuses for cleaning semiconductor components (a cleaning object or a PCB board) with plasma discharge in a semiconductor fabrication process. More specifically, the present invention relates to a semiconductor plasma cleaning apparatus with cleaning chambers (100) for improving working efficiency by making continuous plasma cleaning of cleaning objects placed in magazines. The semiconductor plasma cleaning apparatus having a plurality of cleaning chambers (100), includes the plurality of cleaning chambers (100) arranged in parallel vertically, an unloading unit (200) movable in up / down direction according to a cleaning progress Situation for transferring magazines having cleaning objects loaded thereon to front of each of the cleaning chambers (100) in succession, a plurality of first pushers (250) mounted to the unloading unit (200) for pushing and discharging the cleaning object loaded in the magazine being transferred by the unloading unit (200) toward the cleaning chamber one by one, a rotatable transfer unit (300) for receiving an empty magazine having all the cleaning objects discharged from the unloading unit (200), rotating the empty magazine by 180 horizontally, and transferring the empty magazine to rear of the plasma cleaning chamber, a loading unit (400) for receiving the empty magazines from the rotatable transfer unit (300), and transferring the empty magazines to rear of each of the plasma cleaning chambers (100) in succession while moving from an lower side to an upper side according to the cleaning progress situation, and a second pusher (500) for pushing and loading the cleaning objects having cleaning thereof finished into the empty magazine at the loading unit (400).

A two-dimensional semiconductor saturable absorber mirror comprises an optical fiber, a two-dimensional semiconductor thin film attached to an end surface of the optical fiber, and a gold film attached to the two-dimensional semiconductor thin film. A method for fabricating the two-dimensional semiconductor saturable absorber mirror comprises the following steps: cutting the optical fiber, putting the cut optical fiber and a two-dimensional semiconductor target into a vacuum chamber, ionizing a surface of two-dimensional semiconductor target to generate two-dimensional semiconductor plasma, depositing the two-dimensional semiconductor plasma on an exposed end surface of the optical fiber to form the two-dimensional semiconductor thin film, and by controlling deposition time and / or deposition temperature, ensuring the two-dimensional semiconductor thin film to be a desired thickness; and plating the gold film on the resulting two-dimensional semi-conductor thin film.